HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2002.05.08
Page No. : 1/4
HLB122J
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB122J is a medium power transistor designed for use in
switching applications.
Features
•
High breakdown voltage
•
Low collector saturation voltage
•
Fast switching speed
TO-252
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 30 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 600 V
BVCEO Collector to Emitter Voltage.................................................................................. 400 V
BVEBO Emitter to Base Voltage............................................................................................ 6 V
IC Collector Current (DC) ............................................................................................... 800 mA
IC Collector Current (Pulse) ......................................................................................... 1600 mA
IB Base Current (DC) ..................................................................................................... 100 mA
IB Base Current (Pulse).................................................................................................. 200 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
fT
Min.
600
400
6
-
-
-
-
-
-
10
5
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
400
800
1
40
-
0.6
Unit
V
V
V
uA
uA
uA
mV
mV
V
Test Conditions
IC=100uA
IC=10mA
IE=10uA
VCB=600V
VCE=400V
VEB=6V
IC=100mA, IB=20mA
IC=300mA, IB=60mA
IC=100mA, IB=20mA
VCE=10V, IC=0.1A
VCE=10V, IC=0.5A
VCC=100V, IC=0.3A, IB1=-IB2=0.06A
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
uS
HLB122J
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100
10000
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2002.05.08
Page No. : 2/4
Saturation Voltage & Collector Current
125 C
o
75 C
o
Saturation Voltage (mV)
1000
75 C
125 C
o
o
o
25 C
o
hFE
10
100
25 C
hFE @ VCE=10V
10
V
CE(sat)
@ I
C
=5I
B
1
1
10
100
1000
1
1
10
100
1000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
10000
V
BE(s at)
@ I
C
=5I
B
ON Voltage & Collector Current
1000
75 C
1000
25 C
o
o
125 C
o
100
1
10
100
1000
ON Voltage-V
BE(on)
(mV)
Saturation Voltage (mV)
V
BE(on)
@ V
CE
=10V
100
1
10
100
1000
Collector Current-I
C
(mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
100
Switching Time & Collector Current
10
V
CC
=45V, I
C
=5I
B1
=-5I
B2
Capacitance-Cob (pF)
Switching Time (us)
..
.
Tstg
1
10
Ton
Tf
1
0.1
1
10
100
0.1
100
1000
Reverse-Biased Voltage (V)
Collector Current (mA)
HLB122J
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2002.05.08
Page No. : 3/4
Safe Operating Area
10000
Collector Current (mA)
1000
100
P
T
=1ms
P
T
=100ms
P
T
=1s
10
1
1
10
100
1000
Forward-Biased Voltage (V)
HLB122J
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-252 Dimension
A
C
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2002.05.08
Page No. : 4/4
Marking:
H
L B
1 2 2 J
Date Code
Control Code
B
D
L
F
G
Style: Pin 1.Base 2.Collector 3.Emitter
3
H
E
K
2
I
1
J
3-Lead TO-252 Plastic Surface Mount Package
HSMC Package Code: J
*: Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2520 0.2677
0.2125 0.2283
Millimeters
Min.
Max.
0.45
0.55
1.65
1.95
0.90
1.50
0.45
0.60
6.40
6.80
5.40
5.80
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0866 0.1102
-
*0.0906
-
0.0354
-
0.0315
0.2047 0.2165
0.0551 0.0630
Millimeters
Min.
Max.
2.20
2.80
-
*2.30
-
0.90
-
0.80
5.20
5.50
1.40
1.60
Notes:
1.Dimension and tolerance based on our Spec. dated May. 05,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB122J
HSMC Product Specification
微控制器 MCU
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