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RTAX250S-CQ352B

产品描述Field Programmable Gate Array, 2816 CLBs, 250000 Gates, 4224-Cell, CMOS, CQFP352, CERAMIC, QFP-352
产品类别可编程逻辑器件    可编程逻辑   
文件大小18MB,共276页
制造商Microsemi
官网地址https://www.microsemi.com
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RTAX250S-CQ352B概述

Field Programmable Gate Array, 2816 CLBs, 250000 Gates, 4224-Cell, CMOS, CQFP352, CERAMIC, QFP-352

RTAX250S-CQ352B规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Microsemi
包装说明QFF, TPAK352,2.9SQ,20
Reach Compliance Codeunknown
其他特性30000 ASIC GATES ALSO AVAILABLE
CLB-Max的组合延迟1.11 ns
JESD-30 代码S-CQFP-F352
JESD-609代码e0
长度48 mm
可配置逻辑块数量2816
等效关口数量250000
输入次数248
逻辑单元数量4224
输出次数248
端子数量352
最高工作温度125 °C
最低工作温度-55 °C
组织2816 CLBS, 250000 GATES
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码QFF
封装等效代码TPAK352,2.9SQ,20
封装形状SQUARE
封装形式FLATPACK
峰值回流温度(摄氏度)225
电源1.5,1.5/3.3,2.5/3.3 V
可编程逻辑类型FIELD PROGRAMMABLE GATE ARRAY
认证状态Not Qualified
筛选级别MIL-STD-883 Class B
座面最大高度2.89 mm
最大供电电压1.575 V
最小供电电压1.425 V
标称供电电压1.5 V
表面贴装YES
技术CMOS
温度等级MILITARY
端子面层Tin/Lead (Sn/Pb)
端子形式FLAT
端子节距0.5 mm
端子位置QUAD
处于峰值回流温度下的最长时间20
宽度48 mm
Base Number Matches1

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Revision 17
RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs
Radiation Performance
• SEU-Hardened Registers Eliminate the Need for Triple-Module
Redundancy (TMR)
– Immune to Single-Event Upsets (SEU) to LET
TH
> 37 MeV-
cm
2
/mg
– SEU Rate < 10
-10
Errors/Bit-Day (worst case GEO)
• SRAM Upset Rate of <10
-10
Errors/Bit-Day with Use of Error
Detection and Correction (EDAC) IP (included) with Integrated
SRAM Scrubber
– Single-Bit Correction, Double-Bit Detection
– Variable-Rate Background Refreshing
• Total Ionizing Dose Up to 300 krad (Si, Functional)
• Single-Event Latch-Up Immunity (SEL) to LET
TH
> 117 MeV-
cm
2
/mg
• TM1019 Test Data Available
• B-Flow – MIL-STD-883B
• E-Flow – Extended Flow
• V-Flow – QML Class V per MIL-PRF-38535
®
Specifications
• Up to 4 Million Equivalent System Gates or 500 k Equivalent
ASIC Gates
• Up to 20,160 SEU-Hardened Flip-Flops
• Up to 840 I/Os
with
SEU-Protected Input, Output, and Enable
Registers
• Up to 540 kbits Embedded SRAM
• Manufactured on 0.15 µm CMOS Antifuse Process Technology,
7 Layers of Metal
• Electrostatic Discharge (ESD) is 2,000 V (HBM MIL-STD-883,
TM3015)
Embedded Multiply/Accumulate Blocks
(RTAX-DSP Only)
Processing Flows
Prototyping Options
Features
Up to 120 Multiply/Accumulate Blocks
Fully SEU- and SET-Hardened
125 MHz Performance throughout Military Temperature Range
Flexible, Cascadable Accumulate Function
RTAX-SL Low Power Option
Leading-Edge Performance
High-Performance Embedded FIFOs
350+ MHz System Performance
500+ MHz Internal Performance
700 Mb/s LVDS Capable I/Os
• Commercial Axcelerator Devices for Functional Verification
(RTAX™-S/SL only)
• RTAX-S/SL PROTO and RTAX-DSP PROTO Devices with
Same Functional and Timing Characteristics as Flight Unit in a
Non-Hermetic Package
• Low-Priced Reprogrammable ProASIC
®
3 Option for Functional
Verification (RTAX-S/SL only)
• Offers Up To 80% Saving of Static Current Compared to
Standard RTAX-S Device at Worst-Case Conditions
• Single-Chip, Nonvolatile Solution
• 1.5 V Core Voltage for Low Power
• Flexible, Multi-Standard I/Os:
– 1.5 V, 1.8 V, 2.5 V, 3.3 V Mixed Voltage Operation
– Bank-Selectable I/Os – 8 Banks per Chip
– Single-Ended I/O Standards: LVTTL, LVCMOS, 3.3 V PCI
– JTAG Boundary Scan Testing (as per IEEE 1149.1)
– Differential I/O Standards: LVPECL and LVDS
– Voltage-Referenced I/O Standards: GTL+, HSTL Class 1,
SSTL2 Class 1 and 2, SSTL3 Class 1 and 2
– Hot-Swap with Cold-Sparing Support (Except PCI)
• Embedded Memory with Variable Aspect Ratio:
– Independent, Width-Configurable Read and Write Ports
– Programmable Embedded FIFO Control Logic
– ROM Emulation Capability
• Deterministic, User-Controllable Timing
• Unique In-System Diagnostic and Debug Capability
Table 1 • RTAX Family Product Profile
Device
Capacity
Equivalent System Gates
ASIC Gates
Modules
Register (R-cells)
Combinatorial (C-cells)
Embedded RAM/FIFO (w/o EDAC)
Core RAM Blocks
Core RAM Bits (K = 1,024)
Embedded Multiply/Accumulate
Blocks
Clocks (segmentable)
Hardwired
Routed
I/Os
I/O Banks
User I/Os (maximum)
I/O Registers
Package
CG/LG*
CQ
Note:
RTAX250S/SL RTAX1000S/SL RTAX2000S/SL RTAX4000S/SL RTAX2000D/DL RTAX4000D/DL
250,000
30,000
1,408
2,816
12
54 k
1,000,000
125,000
6,048
12,096
36
162 k
2,000,000
250,000
10,752
21,504
64
288 k
4,000,000
500,000
20,160
40,320
120
540 k
2,000,000
250,000
9,856
19,712
64
288 k
64
4,000,000
500,000
18,480
36,960
120
540 k
120
4
4
8
198
744
624
208, 352
4
4
8
418
1,548
624
352
4
4
8
684
2,052
624, 1152
256, 352
4
4
8
840
2,520
1272
352
4
4
8
684
2,052
1272
352
4
4
8
840
2,520
1272
352
*The body size of the CG1272 and LG1272 packages used on the RTAX-DSP devices is slightly larger than the body size of the
CG/LG1272 used on RTAX4000S/SL devices.
February 2015
© 2015 Microsemi Corporation
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