*P\o<bju±*.
t
20 STERN AVE
SPRINQRELD, NEW JERSEY 07081
U.SA
(Jna.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
50RIA SERIES
MEDIUM POWER THYRISTORS
Features
High current rating
Excellent dynamic characteristics
dv/dt = 1OOOWus option
Superior surge capabilities
Standard package
Metric threads version available
Types up to 1600V V
DRM
/V
RRM
Stud Version
50 A
Typical Applications
Phase control applications in converters
Lighting circuits
Battery charges
Regulated power supplies and temperature and
speed control circuit
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
Parameters
r(Av|
@T
C
50RIA
10 to 120
50
94
80
140 to 160
50
90
80
1200
1257
7.21
6.58
Units
A
°C
A
A
A
s. I
'TIRMSI
I
T3M
@50Hz
@60Hz
I
2
t
@50Hz
@60Hz
w
/w
V
ORM'
V
RRM
1430
1490
10,18
9.30
100(0 1200
KA
2
S
KA
2
s
V
MS
°C
1400to 1600
110
tq
typical
L
E E TRI A SPE
Voltage Ratings
Type number
Voltage
Code
10
20
40
60
- 4 0 to 125
Case Style
TO-208AC (TO-65)
I ATIO S
v
rW
V
RRM>
max
- repetitive
peak and off-stale voltage (1)
V
100
V
RSM
, maximum non-
repetitive peak voltage (2)
V
150
300
500
700
900
1100
1300
1500
1700
'ORM^RRM
max
'
@ Tj = Tj max
mA
200
400
600
800
1000
1200
1400
1600
50RIA
ao
100
120
140
160
15
(1) Unils may be broken over non-repelitively in the off-slate direction without damage, If dl/dt does not exceed
(2) For voltage pulses with t 5 5ms
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information turnished hy NJ Semi-Cnnductors is helieved to he both accurate and reliable at the time uf going to press. However N.I
Semi-C onduclors assumes no responsibility tor any errors or omissions discovered in its use. NJ Semi-Cuiuluctors encourages
customers to ventv thai datasheets are current before placing orders.
On-state Conduction
50RIA
Parameter
I
T
Max. average on-state current
@ Case temperature
W)
I
TSM
M
ax.
1010120
50
94
80
1430
1490
1200
1255
140to160
50
90
80
1200
1257
1010
1057
7.21
6.58
5.10
4.65
72.1
1.02
Units
A
Conditions
160' sinusoidal conduction
•c
A
A
RMS on-state current
Max. peak, one-cyde
non-repetitive surge current
t ~ 10ms
t = 8.3ms
t = 10ms
1 - 8.3ms
No voltage
reappiied
100% V
RRM
reappiied
No voltage
reappiied
100% V
RRM
reappiied
Sinusoidal half wave,
Initial T, = T, max.
I
2
t
Maximum ft for fusing
10.18
9.30
7.20
656
KA
2
S
t = 10ms
t = 8 3ms
t = 10ms
t = 8.3ms
KA^s
V
I
2
!/!
V
T(TO|1
Maximum Wt for fusing
Low level value of threshold
voltage
101.8
0.94
t = 0.1 to 10ms, no voltage reappiied, Tj = Tj max.
(1 6.7% x n x I
T(AV)
< I < n x I
T(AV)
), Tj
-
T, max.
V
T(TOJ2
High level value of threshold
voltage
1.08
1 17
(
I I
xl
T ( A V )
<l<20x
I
rxl
T ( A V )
). Tj-Tjmax.
r
n
Low level value of on-state
slope resistance
4.08
4.78
mil
(16.7% x * x I
T(A¥)
< I < K x L
(AV)
),
Tj
= Tj max.
r
,2
High level value of on-state
slope resistance
3,34
3.97
<K X I
T(AV1
< l< 20 X n x I
T(W)
), Tj = Tj max.
V
ru
I
H
I
L
Max. on-state voltage
Maximum holding current
Latching current
1.60
200
1.78
V
mA
l
pk
= 157 A, Tj = 25'C
Tj = 25'C. Anode supply 22V, resistive toad,
Initial IT » 2A
Anode supply 6V, resistive load
400
Switching
Parameter
di/dt
Max. rate of rise of turned-on
current
V
DnM
£ 600V
V
ORU
i 1600V
t
d
Typical delay time
50RIA
Units
Conditions
T
C
= 125'C,V
DM
= rated V
DRM
200
100
0.9
A/us
Gate pulse = 20V, 15n, t = 6us, t
f
= 0.1us max
I
TM
= (2x rated di/dt) A
T
c
= 25T V
DM
= rated V
DRU
L
U
= 10A dc resistive circuit
us
Gate pulse
-
10V, 15n source, t
n
= 20ps
T
c
= 125'C, I
TU
= 50A. reappiied dv/dt = 20V/us
dir/dt = -10A/MS, V
R
=50V
l
q
Typical turn-off time
110
Blocking
Parameter
dv/dt
Max. critical rate of rise of
off-state voltage
50RIA
200
Units
V/MS
Conditions
Tj = Tj max. linear to 100% rated V
DRM
Tj = Tj max. linear to 67% rated V
ORM
soon
(•) Available with dv/dt = 1000V/MS. to complete code add S90 i.e. 50RIA160S90.
Triggering
Parameter
P
GM
Maximum peak gate power
50RIA
Units
Conditions
Tj = Tj
max,
t s 5ms
10
2.5
2.5
20
P
G{AV
. Maximum average gate power
I
GM
+V
GM
Max. peak positive gate current
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required
to trigger
w
A
V
10
<s>
250
50
mA
Tj = -
40'C
? r
,,
J
~
Tj = 1 25"C
J
""
Tj =
25'C
Max. required gate trigger
current/voltage are the
lowest value which will trigger
applied
Wax
-
V
GT
DC gate voltage required
to (rigger
rn>
5.0
0.2
L
3.5
V
mA
V
I
GD
V
GO
DC gate current not to trigger
DC gate voltage not to trigger
T = T max
V
J
Crated voltage
Tj = Tj max
lr
'9ger
9
a(
e current/ voltage not to
's the max. value which
V
ORM
anode-to-calhode applied
Thermal and Mechanical Specification
Parameter
Tj
T,,,,
sig
Max. operating temperature range
Max. storaga temperature range
50RIA
-40to125
- 4 0 to 125
0.35
Units
Conditions
•c
•c
K/W
R
IhJC
Max. thermal resistance,
lh
,„
'
junction to case
R
(hcs
Max. thermal resistance,
case lo heatstnk
T
Mounting torque
Min.
Max.
DC operation
0,25
K/W
Mounting surface, smooth, flat and greased
2.8
(25)
Nm
Non-lubricated threads
3.4(30)
28(10)
(Ibf-in)
g(oz)
wt
Approximate weight
Case style
TO-208AC (TO-65)
See Outline Table
AR
(hJC
Conduction
(The following table shows the increment of thermal resistance R
(UC
when devices operate at different conduction angles than DC)
Conduction angle
180'
120°
Sinusoidal conduction
0.078
0.094
0.120
0.176
Rectangular conduction Units
0.057
0.098
K/W
Conditions
Tj = Tj max.
90'
60*
30'
0.294
0.130
0.183
0.296
Ordering Information Table
De i e ode
50 I RIA I
0 IS 0 I M
Current code
Essential part number
Voltage code: Coda x 10 = V
RRM
(See Voltage Rating Table)
Critical dv/dt: None = 500V/us (Standard value)
S90
= 1000V/us (Special selection)
None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A
M
= Stud base TO-208AC (TO-65) M6 X 1
Outline Table
~
10.59 D I A )
Ft
La
1/<T -29 U N F - 2 A
F o r H e r r i c Q e v i r e M6xl
Case
Style TO208AC (TO-65)
AH dimensions in millimeters (inches)
意法半导体-低功耗射频
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