HIP6017B
PRELIMINARY
Data Sheet
March 1999
File Number
4585
Advanced PWM and Dual Linear Power
Control
The HIP6017B provides the power control and protection for
three output voltages in high-performance microprocessor
and computer applications. The IC integrates a PWM
controller, a linear regulator and a linear controller as well as
the monitoring and protection functions into a single 28 lead
SOIC package. The PWM controller regulates the
microprocessor core voltage with a synchronous-rectified
buck converter. The linear controller regulates power for the
GTL bus and the linear regulator provides power for the
clock driver circuits.
The HIP6017B includes an Intel-compatible, TTL 5-input
digital-to-analog converter (DAC) that adjusts the core PWM
output voltage from 2.1VDC to 3.5VDC in 0.1V increments
and from 1.3VDC to 2.05VDC in 0.05V steps. The precision
reference and voltage-mode control provide
±1%
static
regulation. The linear regulator uses an internal pass device
to provide 2.5V
±2.5%.
The linear controller drives an
external N-Channel MOSFET to provide 1.5V
±2.5%.
The HIP6017B monitors all the output voltages. A single
Power Good signal is issued when the core is within 10% of
the DAC setting and the other levels are above their under-
voltage levels. Additional built-in over-voltage protection for
the core output uses the lower MOSFET to prevent output
voltages above 115% of the DAC setting. The PWM over-
current function monitors the output current by using the
voltage drop across the upper MOSFET’s r
DS(ON)
,
eliminating the need for a current sensing resistor.
Features
• Provides 3 Regulated Voltages
- Microprocessor Core, Clock and GTL Power
• Linear Controller Drives Either N-Channel MOSFETs or
Bipolar Transistors
• Operates from +3.3V, +5V and +12V Inputs
• Simple Single-Loop PWM Control Design
- Voltage-Mode Control
• Fast Transient Response
- High-Bandwidth Error Amplifier
- Full 0% to 100% Duty Ratios
• Excellent Output Voltage Regulation
- Core PWM Output:
±1%
Over Temperature
- Other Outputs:
±2.5%
Over Temperature
• TTL-Compatible 5-Bit Digital-to-Analog Core Output
Voltage Selection
- Wide Range - 1.3V
DC
to 3.5V
DC
- 0.1V Steps from 2.1V
DC
to 3.5V
DC
- 0.05V Steps from 1.3V
DC
to 2.05V
DC
• Power-Good Output Voltage Monitor
• Microprocessor Core Voltage Protection Against Shorted
MOSFET
• Over-Voltage and Over-Current Fault Monitors
- Does Not Require Extra Current Sensing Element,
Uses MOSFET’s r
DS(ON)
• Small Converter Size
- Constant Frequency Operation
- 200kHz Free-Running Oscillator; Programmable from
50kHz to over 1MHz
Pinout
HIP6017B (SOIC)
TOP VIEW
NC 1
NC 2
VID4 3
VID3 4
VID2 5
VID1 6
VID0 7
PGOOD 8
GND2 9
V33 10
NC 11
SS 12
FAULT/RT 13
FB2 14
28 VCC
27 UGATE1
26 PHASE1
25 LGATE1
24 PGND
23 OCSET1
22 VSEN1
21 FB1
20 COMP1
19 FB3
18 DRIVE3
17 GND
16 VOUT2
15 VIN2
Applications
• Full Motherboard Power Regulation for Computers
• Low-Voltage Distributed Power Supplies
Ordering Information
PART NUMBER
HIP6017BCB
TEMP.
RANGE (
o
C)
0 to 70
PACKAGE
28 Ld SOIC
PKG.
NO.
M28.3
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
HIP6017B
Absolute Maximum Ratings
Supply Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V
PGOOD, RT, FAULT, and GATE Voltage . . . GND - 0.3V to V
CC
+ 0.3V
Input, Output or I/O Voltage . . . . . . . . . . . . . . . . . . GND -0.3V to 7V
Thermal Information
Thermal Resistance (Typical, Note 1)
θ
JA
(
o
C/W)
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
o
C
Maximum Storage Temperature Range . . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300
o
C
(SOIC - Lead Tips Only)
Operating Conditions
Supply Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . +12V
±10%
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . 0
o
C to 70
o
C
Junction Temperature Range . . . . . . . . . . . . . . . . . . . . 0
o
C to 125
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
PARAMETER
VCC SUPPLY CURRENT
Nominal Supply
POWER-ON RESET
Rising VCC Threshold
Falling VCC Threshold
Recommended Operating Conditions, Unless Otherwise Noted.
Refer to Figures 1, 2 and 3
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
CC
UGATE1, DRIVE3, LGATE1, and VOUT4 Open
-
10
-
mA
V
OCSET
= 4.5V
V
OCSET
= 4.5V
8.6
8.2
2.45
-
-
-
-
2.55
500
1.25
10.4
10.2
2.65
-
-
V
V
V
mV
V
Rising VIN2 Under-Voltage Threshold
VIN2 Under-Voltage Hysteresis
Rising V
OCSET1
Threshold
OSCILLATOR
Free Running Frequency
Total Variation
Ramp Amplitude
REFERENCE AND DAC
DAC(VID0-VID4) Input Low Voltage
DAC(VID0-VID4) Input High Voltage
DACOUT Voltage Accuracy
Reference Voltage (Pin FB2 and FB3)
LINEAR REGULATOR
Regulation
Under-Voltage Level
Under-Voltage Hysteresis
Over-Current Protection
Over-Current Protection During Start-Up
LINEAR CONTROLLER
Regulation
Under-Voltage Level
Under-Voltage Hysteresis
Output Drive Current
I
DRIVE3
VIN2 - V
DRIVE3
> 0.6V
FB3
UV
VSEN3 = DRIVE3, 0 < I
DRIVE3
< 20mA
FB3 Rising
FB2
UV
10mA < I
VOUT2
< 150mA
FB2 Rising
∆V
OSC
RT = OPEN
6kΩ < RT to GND < 200kΩ
RT = Open
185
-15
-
200
-
1.9
215
+15
-
kHz
%
V
P-P
-
2.0
-1.0
1.240
-
-
-
1.265
0.8
-
+1.0
1.290
V
V
%
V
-2.5
-
-
180
560
-
75
6
230
700
+2.5
87
-
-
-
%
%
%
mA
mA
-2.5
-
-
20
-
75
6
40
+2.5
87
-
-
%
%
%
mA
4
HIP6017B
Electrical Specifications
PARAMETER
PWM CONTROLLER ERROR AMPLIFIER
DC Gain
Gain-Bandwidth Product
Slew Rate
PWM CONTROLLER GATE DRIVER
Upper Drive Source
Upper Drive Sink
Lower Drive Source
Lower Drive Sink
PROTECTION
V
OUT1
Over-Voltage Trip
FAULT Sourcing Current
OCSET1 Current Source
Soft-Start Current
Chip Shutdown Soft-Start Threshold
POWER GOOD
V
OUT1
Upper Threshold
V
OUT1
Under-Voltage (Lower Threshold)
V
OUT1
Hysteresis (VSEN1/DACOUT)
PGOOD Voltage Low
V
PGOOD
VSEN1 Rising
VSEN1 Rising
Upper/Lower Threshold
I
PGOOD
= -4mA
108
92
-
-
-
-
2
-
110
94
-
0.5
%
%
%
V
I
OVP
I
OCSET
I
SS
VSEN1 Rising
V
FAULT/RT
= 10V
V
OCSET
= 4.5V
DC
112
10
170
-
-
115
14
200
11
-
118
-
230
-
1.0
%
mA
µA
µA
V
I
UGATE
R
UGATE
I
LGATE
R
LGATE
VCC = 12V, V
UGATE1
= 6V
V
UGATE1-PHASE1
= 1V
VCC = 12V, V
LGATE1
= 1V
V
LGATE1
= 1V
-
-
-
-
1
1.7
1
1.4
-
3.5
-
3.0
A
Ω
A
Ω
GBWP
SR
COMP = 10pF
-
-
-
88
15
6
-
-
-
dB
MHz
V/µs
Recommended Operating Conditions, Unless Otherwise Noted.
Refer to Figures 1, 2 and 3
(Continued)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
100
C
UGATE1
= C
LGATE1
= C
GATE
V
VCC
= 12V, V
IN
= 5V
80
1000
RESISTANCE (kΩ)
R
T
PULLUP
TO +12V
I
CC
(mA)
C
GATE
= 4800pF
60
C
GATE
= 3600pF
40
C
GATE
= 1500pF
100
10
R
T
PULLDOWN TO V
SS
20
C
GATE
= 660pF
0
10
100
SWITCHING FREQUENCY (kHz)
1000
100
200
300
400
500
600
700
800
900 1000
SWITCHING FREQUENCY (kHz)
FIGURE 4. R
T
RESISTANCE vs FREQUENCY
FIGURE 5. BIAS SUPPLY CURRENT vs FREQUENCY
5
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