HIP5010, HIP5011
Data Sheet
March 1996
File Number
4029.5
7V, 17A SynchroFET™ Complementary
Drive Synchronous Half-Bridge
Designed with the P6 and Pentium® in mind, the Intersil
SynchroFET™ family provides a new approach for
implementing a synchronous rectified buck switching regulator.
The SynchroFET replaces two power DMOSs, a Schottky
diode, two gate drivers and synchronous control circuitry. The
complementary drive circuit turns the upper FET on and the
lower FET off when the input from the PWM is high. When the
input from the PWM goes low the upper FET turns off and the
lower FET turns on. The HIP5011 has a PWM pin that inverts
the relationship from the input to PHASE. This architecture
allows the designer to utilize a low cost single-ended PWM
controller in either a current or voltage mode configuration. The
SynchroFET operates in continuous conduction mode reducing
EMI constraints and enabling high bandwidth operation.
Several features ensure easy start-up. First, the supply currents
stay below specification as the supply voltages ramp up; no
unexpected surges occur that might perturb a soft-start or
deplete a charge-pump. Second, any power-up sequence of
the V
CC
, V
IN
, or PWM pins can be used without causing large
currents. Third, the chip operates when V
CC
is greater than 2V
so V
CC
can be created from a charge pump powered from V
IN
.
Features
• Complementary Drive, Half-Bridge Power NMOS
• Use With Low-Cost Single-Output PWM Controllers
• Improve Efficiency Over Conventional Buck Converter with
Schottky Clamp
• Minimum Deadtime Provided by Adaptive Shoot-Through
Protection Eliminates External Schottky
• Grounded Case for Low EMI and Simple Heatsinking
• Low Operating Current
• Frequency Exceeding 1MHz
• Dual Polarity Input Options
• All Pins Surge Protected
Applications
• 5V to
≤3.3V
Synchronous Buck Converters
• Pentium and P6 Power Supplies
• PowerPC
™
Power Supplies
• Bus Terminations (BTL and GTL)
• Drive 5V Motors Directly from Microprocessor
Pinouts
HIP5010IS1, HIP5011IS1 (SIP - VERTICAL)
TOP VIEW
7
6
5
4
3
2
1
GND (TAB)
PHASE
V
IN
PWM (HIP5010), PWM (HIP5011)
V
CC
V
IN
PHASE
FRONT ROWS = PINS 1, 3, 5, 7
BACK ROWS = PINS 2, 4, 6
Ordering Information
PART
NUMBER
HIP5010IS
HIP5010IS1
HIP5011IS
HIP5011IS1
TEMP.
RANGE (
o
C)
-40 to 85
-40 to 85
-40 to 85
-40 to 85
PACKAGE
7 Ld Gullwing SIP
PKG.
NO.
Z7.05B
7 Ld Staggered Vertical SIP Z7.05C
7 Ld Gullwing SIP
Z7.05B
7 Ld Staggered Vertical SIP Z7.05C
Typical Application Block Diagram
HIP5010IS, HIP5011IS (SIP - GULLWING)
TOP VIEW
7
6
5
4
3
2
1
PHASE
V
IN
PWM (HIP5010), PWM (HIP5011)
V
CC
V
IN
PHASE
PWM
CONTROLLER PWM
+12V
+5V
V
CC
V
IN
GND
(TAB)
+3.3V
CONTROL
PHASE
HIP5010
GND
SYNCHRONOUS RECTIFIED BUCK CONVERTER
Pentium® is a registered trademark of Intel Corporation.
PowerPC™ is a trademark of International Business Machines.
SynchroFET™ is a trademark of Intersil Corporation.
2-3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
HIP5010, HIP5011
Absolute Maximum Ratings
Supply Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +16V
Input Voltage V
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7V
I
PHASE,
I
VIN,
I
GND
(T
J
= 25
o
C) . . . . . . . . . . . 17A (Repetitive Peak)
I
PHASE,
I
VIN,
I
GND
(T
J
= 150
o
C) . . . . . . . . . . 15A (Repetitive Peak)
PWM Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -4V to +16V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 3 (4kV)
Lead Temperature (Soldering 10s) (Lead Tips Only). . . . . . . 300
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . . -65
o
C to 150
o
C
Junction Temperature Range . . . . . . . . . . . . . . . . . . -40
o
C to 150
o
C
Thermal Information
(Typical)
Package
SOIC (IB) . . .
SIP (IS). . . . .
SIP (IS1). . . .
†
θ
JC
††
(
o
C/W)
26
2
2
0
63
55
-
θ
JA
(
o
C/W)†
1
2
3
45
30
-
42
25
-
41
24
-
3†††
35
18
-
Operating Conditions
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . +12V, 20%
Input Voltage VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 5.5V
Supply Voltage, VCC, minimum for charge-pumped start-up . +4.0V
Versus additional square inches of 1 ounce copper on the
printed circuit board.
††
θ
JC
is measured to pin 12 for the SOIC. Printed circuit board
had 1 square inch of copper. For SIP Packages value shown is
typical with an infinite heat sink.
†††
200 linear feet per minute of air flow.
I
PHASE
.SIPs:11.5A(RMS), 11.2A(DC); SOIC:7.4A(RMS), 7.4A(DC)
I
VIN
. . . SIPs:10.0A(RMS), 8.5A(DC); SOIC:6.4A(RMS), 6.4A(DC)
I
GND
. . . . .SIPs:8.5A(RMS), 6.0A(DC); SOIC:5.4A(RMS), 5.4A(DC)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.
Electrical Specifications
T
J
= 25
o
C
PARAMETERS
r
DS(ON)
Upper MOSFET
r
DS(ON)
Lower MOSFET
V
IN
Operating Current
V
IN
Quiescent Current
V
CC
Operating Current
V
CC
Quiescent Current (HIP5010)
V
CC
Quiescent Current (HIP5010)
V
CC
Quiescent Current (HIP5011)
V
CC
Quiescent Current (HIP5011)
Low Level PWM Input Voltage
High Level PWM Input Voltage
PWM Input Voltage Hysteresis
Input Pulldown Resistance (HIP5010)
Input Pullup Resistance (HIP5011)
SYMBOL
R
DSU
R
DSL
I
VINO
I
VIN
I
CCO
I
CCIH
I
CCIL
I
CCNIH
I
CCNIL
V
IL
V
IH
V
IHYS
R
PWM
R
PWM
TEST CONDITIONS
V
CC
= 12V, VIN = 5V
V
CC
= 12V, VIN = 5V
V
IN
= 5V, No Load, 500kHz
PWM or PWM = V
CC
or GND
V
CC
= 12V, 500kHz
PWM = V
CC
PWM = GND
PWM = V
CC
PWM = GND
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
34
36
5
0.1
8
80
0.1
0.1
140
1.8
2.1
0.3
220
220
MAX
39
42
8
10
12
-
10
10
-
-
-
-
-
-
T
J
= - 40
o
C
T
J
= 150
o
C
MIN
-
-
-
-
-
-
-
-
-
1
-
-
100
100
MAX
65
68
10
100
15
400
100
100
400
-
3
-
400
400
UNITS
mΩ
mΩ
mA
µA
mA
µA
µA
µA
µA
V
V
V
kΩ
kΩ
Switching Specifications
T
J
= 25
o
C
PARAMETERS
Upper Device Turn-Off Delay
Lower Device Turn-Off Delay
Dead Time
Phase Rise-Time
Phase Fall-Time
SYMBOL
t
PHL
t
PLH
t
DT
t
r
t
f
TEST CONDITIONS
V
CC
= 12V, I
PHASE
= -1A
V
CC
= 12V, I
PHASE
= +1A
V
CC
= +12V, I
PHASE
= -1A
V
CC
= 12V, I
PHASE
= -1A
V
CC
= 12V, I
PHASE
= +1A
MIN
-
-
-
-
-
TYP
30
30
10
20
20
MAX
50
50
-
-
-
T
J
= - 40
o
C
T
J
= 150
o
C
MIN
-
-
-
-
-
MAX
80
80
-
-
-
UNITS
ns
ns
ns
ns
ns
2-5
嵌入式系统
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