HIP2060
April 1998
60V, 10A Half Bridge Power MOSFET Array
Description
The HIP2060 is a power half-bridge MOSFET array that con-
sists of two matched N-Channel enhancement-mode MOS
transistors. The advanced Intersil PASIC2 process technol-
ogy used in this product utilizes efficient geometries that pro-
vides outstanding device performance and ruggedness.
The HIP2060 is designed to integrate two power devices in
one chip thus providing board layout area and heat sink sav-
ings for applications such as Motor Controls, Uninterruptable
Power Supplies, Switch Mode Power Supplies, Voice Coil
Motors, and Class D Power Amplifier.
Features
• Two 10A Power MOS N-Channel Transistors
• Output Voltage to 60V
• r
DS(ON)
. . . . . 0.135Ω Max Per Transistor at V
GS
= 15V
• r
DS(ON)
. . . . . . 0.15Ω Max Per Transistor at V
GS
= 10V
• Pulsed Current . . . . . . . . . . . . . . . . 25A Each Transistor
• Avalanche Energy . . . . . . . . . . 100mJ Each Transistor
• Grounded Tab Eliminates Heat Sink Isolation
Ordering Information
PART NUMBER
HIP2060AS1
HIP2060AS2
HIP2060AS3
TEMP.
RANGE (
o
C)
-40 to 125
-40 to 125
-40 to 125
PACKAGE
5 Ld SIP
5 Ld Gullwing SIP
5 Ld SIP
PKG.
NO.
Z5.067C
Z5.067A
Z5.067B
GATE1
1
SOURCE1 = DRAIN2
4
GATE2
2
Z2
Z1
D1
Symbol
DRAIN1
5
NOTE: When ordering use the entire part number.
SOURCE2
3, TAB
Packages
JEDEC TS-001AA (ALTERNATE VERSION)
HIP2060 AS1
54
3
2
JEDEC MO-169
HIP2060 AS2
1
1 GATE1
2 GATE2
3 SOURCE2
4 SOURCE1-DRAIN2
5 DRAIN1
(TAB)
Z5.067B (SIP)
HIP2060 AS3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
File Number
3983.5
1
HIP2060
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HIP2060
60
60
±20
10
25
10
100
46
0.37
60
-40 to 125
-40 to 150
300
60
UNITS
V
V
V
A
A
A
mJ
W
W/
o
C
o
C/W
o
C
o
C
o
C
Continuous Drain-Source Voltage Over Operating Junction and Case Temperature Range. . . . . . V
DS
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Source-Drain Diode Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
SD
Pulsed Drain Current, each Output, all Outputs on (Notes 1, 2) . . . . . . . . . . . . . . . . . . . . . . . I
DM
Continuous Drain Current, each Output, all Outputs on (Note 2) . . . . . . . . . . . . . . . . . . . . . . . .I
DS
Single Pulse Avalanche Energy (Note 3) Refer to UIS Curve . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Continuous Power Dissipation at T
C
= 25
o
C (Infinite Heatsink). . . . . . . . . . . . . . . . . . . . . . . . . P
D
Continuous Power Dissipation, Derate above T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Information
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . θ
JA
Operating Case Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
Junction and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (For Soldering, 10s)(Lead Tips Only). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Continuous Drain1-Source2 Voltage Over Operating Junction Temperature Range. . . . . . V
D1S2
NOTES:
1. Pulse width limited by maximum junction temperature.
2. Drain current limited by package construction.
3. V
DD
= 25V, Start T
J
= 25
o
C, L = 1.5mH, R
GS
= 50Ω, R = 0. See Figures 2, 12, and 13.
V
Electrical Specifications
PARAMETER
Drain-Source Breakdown Voltage
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
= 100µA, V
GS
= 0V
T
C
= -40
o
C to
125
o
C
T
C
= 25
o
C
MIN
60
TYP
-
MAX
-
UNITS
V
-
1.5
70
2.3
105
-
2.7
-
V
V
V
µA
µA
µA
V
V
nA
Gate Threshold Voltage
Drain1-Source2 Breakdown Voltage
(Across D1)
Zero Gate Voltage Drain Current
V
GS(TH)
BV
D1S2
I
DSS
I
D1S2
V
GS
= V
DS
, I
D
= 250µA
I
D1S2
= 1µA,
V
G1S1,
V
G2S2
= 0V
V
DS
= 60V
V
GS
= 0V
T
C
= 25
o
C
T
C
= 25
o
C
-
-
-
1
Drain1-Source2 Current (Through D1)
V
D1S2
= 60V
T
C
= 25
o
C
V
G1S1
= 0V, V
G2S2
= 0V
T
C
= 125
o
C
I
D
= 10A, V
GS
= 15V
I
D
= 10A, V
GS
= 10V
-
-
-
-
-
0.3
1
0.9
1.1
-
1
-
1.25
1.5
100
Drain-Source On-State Voltage
(Note 4)
Forward Gate Current, Drain Short
Circuited to Source
Reverse Gate Current, Drain Short
Circuited to Source
Drain-Source On Resistance (Note 4)
V
DS(ON)
I
GSSF
I
GSSR
r
DS(ON)
V
DS
= 0V, V
GS
= 20V
V
DS
= 0V, V
GS
= -20V
V
GS
= 15V, I
D
= 10A
V
GS
= 15V, I
D
= 10A
V
GS
= 10V, I
D
= 10A
V
GS
= 10V, I
D
= 10A
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-100
nA
Ω
Ω
Ω
Ω
S
-
-
-
-
-
0.09
0.15
0.11
0.19
4.5
0.135
0.21
0.15
0.25
-
Forward Transconductance (Note 4)
g
fs
V
DS
= 15V, I
D
= 5A
2
HIP2060
Electrical Specifications
PARAMETER
Turn-On Delay Time (Note 5)
Rise Time (Note 5)
Turn-Off Delay Time (Note 5)
Fall Time (Note 5)
Total Gate Charge (Note 5)
Gate-Source Charge (Note 5)
Gate-Drain Charge (Note 5)
Short-Circuit Input Capacitance,
Common Source
Short-Circuit Output Capacitance,
Common Source for Upper FET
Short Circuit Output Capacitance
Common Source for Lower FET
Short-Circuit Reverse Transfer
Capacitance, Common Source
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS(U)
C
OSS(L)
C
RSS
R
θJC
R
θJA
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DS
= 50V, V
GS
= 10V, I
D
= 10A
See Figures 16 and 17
TEST CONDITIONS
V
DD
= 30V, R
L
= 3Ω
I
D
= 10A, V
GS
= 10V, R
G
= 50Ω
See Figure 14
MIN
-
-
-
-
-
-
-
-
TYP
4
5
12
6
10.5
1.4
4.9
230
MAX
-
-
-
-
12.0
2.0
5.5
-
UNITS
ns
ns
ns
ns
nC
nC
nC
pF
-
150
-
pF
-
225
-
pF
-
40
-
pF
o
C/W
o
C/W
-
-
-
-
2.7
60
Source-Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
SOURCE-TO-DRAIN DIODE SPECIFICATIONS
(Across Z1 and Z2)
Forward Voltage (Note 4)
Reverse Recovery Time (Across Z1)
Reverse Recovery Time (Across Z2)
V
SD
t
rr(S1-D1)
t
rr(S2-D2)
I
SD
= 10A, V
GS
= 0V
I
SD
= 10A, dI
SD
/dt = 100A/µs
I
SD
= 10A, dI
SD
/dt = 100A/µs
-
-
-
1.05
50
75
1.25
-
-
V
ns
ns
SOURCE2-TO-DRAIN1 DIODE SPECIFICATIONS D
(Across D1)
Forward Voltage (Note 4)
Reverse Recovery Time
DEVICE MATCHING
Drain-Source On Resistance Match
NOTES:
4. Pulse test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
5. Independent of operating temperature.
r
DS(ON)M
V
GS
= 10V, I
D
= 10A, T
C
= 25
o
C
-
90
-
%
V
SD
t
rr
I
SD
= 10A, V
GS
= 0V
I
SD
= 10A, dI
SD
/dt = 100A/µs
-
-
8.5
200
9.5
-
V
ns
3
HIP2060
Typical Performance Curves
50
50
T
C
= 25
o
C
10µs
10
5
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
5
10
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
10ms
DC
100
1
0.001
0.01
0.1
t
AV
, TIME IN AVALANCHE (ms)
1
100µs
I
AS
, AVALANCHE CURRENT (A)
STARTING T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
10
STARTING T
C
= 125
o
C
5
1
0.5
FIGURE 1. SAFE-OPERATING AREA CURVE
FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING
20
V
GS
= 15V
V
GS
= 12V
I
D
, DRAIN CURRENT (A)
V
GS
= 8V
I
D
, DRAIN CURRENT (A)
15
V
GS
= 10V
20
-40
o
C
25
o
C
V
DS
= 15V
15
150
o
C
10
10
5
5
0
0
PULSE DURATION = 300µs, T
C
= 25
o
C
2
4
6
8
10
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
0
0
2
4
6
8
10
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3. SATURATION CHARACTERISTICS
FIGURE 4. TRANSFER CHARACTERISTICS
2.5
PULSE DURATION = 300µs, V
GS
= 10V, I
D
= 10A
2.0
NORMALIZED r
DS(ON)
NORMALIZED BV
DSS
1.2
I
D
= 100µA
1.1
1.5
1.0
1.0
0.9
0.5
0
-75
-25
25
75
125
175
0.8
-75
-25
25
75
125
175
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 5. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 6. NORMALIZED BV
DSS
vs JUNCTION TEMPERATURE
4
HIP2060
Typical Performance Curves
2.0
V
GS
, GATE-SOURCE VOLTAGE (V)
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED V
GS(TH)
1.5
(Continued)
16
V
DS
= 50V
V
DS
= 30V
V
DS
= 20V
12
I
D
= 10A, T
C
= 25
o
C
8
1.0
0.5
4
0
-75
0
-25
25
75
125
175
0
5
T
J
, JUNCTION TEMPERATURE (
o
C)
10
Q, GATE CHARGE (nC)
15
20
FIGURE 7. NORMALIZED V
GS(TH)
vs JUNCTION
TEMPERATURE
1000
FIGURE 8. GATE-SOURCE VOLTAGE vs GATE CHARGE
V
GS
= 0V, f = 1MHz, T
C
= 25
o
C
12
10
I
D
, DRAIN CURRENT (A)
8
6
V
GS
= 15V
V
GS
= 10V
800
C, CAPACITANCE (pF)
C
RSS
600
C
OSS(U)
C
OSS(L)
400
C
ISS
4
200
2
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
0
0
5
10
15
20
25
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 9. CAPACITANCE vs VOLTAGE
FIGURE 10. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
Z
θJC
, NORMALIZED THERMAL RESPONSE
10
T
C
= 25
o
C
1
D = 1.0
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
NOTES:
1. DUTY FACTOR, D = t
1
/t
2
2. PEAK T
J
= P
DM
x (Z
θJC
) +T
C
10
1
0.01
10
-5
10
-3
10
-1
10
-4
10
-2
10
o
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
5
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