Drain to Source On-State Voltage Range . . . . . . . . . . . . 5V to 10V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. Drain current limited by package construction.
3. V
DD
= 25V, Start T
J
= 25
o
C, L = 15mH, R
GS
= 50Ω, I
PEAK
= 3.5A. See Figures 1, 2, 12, and 13.
4.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
PARAMETERS
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
= 100µA, V
GS
= 0V
T
C
= -40
o
C to
125
o
C
T
C
= 25
o
C
MIN
60
-
1.8
T
C
= 25
o
C
T
C
= 125
o
C
-
-
-
-
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
-
-
-
-
-
-
-
-
-
-
V
DS
= 50V, V
GS
= 10V, I
D
= 2A
See Figures 16, 17
-
-
-
TYP
-
70
2.3
-
-
-
-
0.215
0.365
0.275
0.465
95
2.5
10
25
18
12
8.0
0.7
3.5
MAX
-
-
2.7
1
10
100
-100
0.265
0.425
0.320
0.5
-
-
-
-
-
-
9.5
1.0
4.0
UNITS
V
V
V
µA
µA
nA
nA
Ω
Ω
Ω
Ω
%
S
ns
ns
ns
ns
nC
nC
nC
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
V
GS(TH)
I
DSS
V
GS
= V
DS
, I
D
= 250µA
V
DS
= 60V
V
GS
= 0V
V
DS
= 0V, V
GS
= 20V
V
DS
= 0V, V
GS
= -15V
V
GS
= 10V, I
D
= 3.5A
V
GS
= 10V, I
D
= 3.5A
V
GS
= 5V, I
D
= 2A
V
GS
= 5V, I
D
= 2A
Forward Gate Current, Drain Short
Circuited to Source
Reverse Gate Current, Drain Short
Circuited to Source
Drain to Source On Resistance (Note 5)
I
GSSF
I
GSSR
r
DS(ON)
Drain to Source On Resistance Matching
Forward Transconductance (Note 5)
Turn-On Delay Time (Note 6)
Rise Time (Note 6)
Turn-Off Delay Time (Note 6)
Fall Time (Note 6)
Total Gate Charge (Note 6)
Gate-Source Charge (Note 6)
Gate-Drain Charge (Note 6)
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
V
GS
= 10V, I
D
= 3.5A
V
DS
= 10V, I
D
= 1A
V
DD
= 30V, R
L
= 15Ω,
V
GS
= +10V, I
D
= 2A, R
G
= 50Ω
See Figure 14
2
HIP0061
Electrical Specifications
PARAMETERS
Short-Circuit Input Capacitance,
Common Source
Short-Circuit Output Capacitance,
Common Source
Short-Circuit Reverse Transfer
Capacitance, Common Source
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
C
ISS
C
OSS
C
RSS
TEST CONDITIONS
V
DS
= 25V, V
GS
= 0V
f = 1MHz
MIN
-
-
-
TYP
142
107
24
MAX
-
-
-
UNITS
pF
pF
pF
Source-Drain Diode Ratings and Specifications
PARAMETERS
Diode Forward Voltage (Note 5)
Reverse Recovery Time
NOTES:
5. Pulse test: Pulse width
≤
300µs, duty cycle
≤
2%.
6. Independent of operating temperature.
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 2A, V
GS
= 0V
I
SD
= 2A, dI
SD
/dt = 100A/µs
MIN
-
-
TYP
0.9
50
MAX
1.1
-
UNITS
V
ns
Typical Performance Curves
10
10µs
I
D
, DRAIN CURRENT (A)
10
10µs
100µs
100µs
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 105
o
C
T
J
= MAX RATED
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
10ms
100ms
DC
1ms
I
D
, DRAIN CURRENT (A)
100µs
1ms
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
1
10
V
DS
, DRAIN VOLTAGE (V)
100
10ms
100ms
DC
0.1
0.1
FIGURE 1A. 25
o
C SAFE-OPERATING AREA CURVE
FIGURE 1B. 105
o
C SAFE-OPERATING AREA CURVE
50
I
AS
, AVALANCHE CURRENT (A)
10
I
D
, DRAIN CURRENT (A)
STARTING T
J
= 25
o
C
10
STARTING T
J
= 125
o
C
10µs
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 125
o
C
T
J
= MAX RATED
1
100µs
1ms
10ms
100ms
DC
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
5
0.1
1
0.001
0.01
0.1
t
AV
, TIME IN AVALANCHE (ms)
1.0
FIGURE 1C. 125
o
C SAFE-OPERATING AREA CURVE
FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING
3
HIP0061
Typical Performance Curves
10.0
V
GS
= 10V
V
GS
= 8V
V
GS
= 6V
(Continued)
20
V
DS
= 15V
V
GS
= 5V
I
D
, DRAIN CURRENT (A)
15
-40
o
C
25
o
C
125
o
C
I
D
, DRAIN CURRENT (A)
7.5
5.0
V
GS
= 4V
10
2.5
PULSE DURATION = 300µs, T
C
= 25
o
C
0
0
2
4
6
8
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
5
0
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
FIGURE 3. TYPICAL SATURATION CHARACTERISTICS
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
r
DS(ON)
, NORMALIZED ON RESISTANCE
2.5
PULSE DURATION = 300µs, V
GS
= 10V, I
D
= 3.5A
2.0
NORMALIZED BV
DSS
1.2
I
D
= 100µA
1.1
1.5
1.0
1.0
0.5
0.9
0
-75
-25
25
75
125
175
0.8
-75
-25
T
J
, JUNCTION TEMPERATURE (
o
C)
25
75
125
T
J
, JUNCTION TEMPERATURE (
o
C)
175
FIGURE 5. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 6. NORMALIZED BV
DSS
vs JUNCTION TEMPERATURE
2.0
V
GS
= V
DS
, I
D
= 250µA
V
GS
, GATE-SOURCE VOLTAGE (V)
V
GS(TH)
, NORMALIZED
1.5
12
V
DS
= 50V
V
DS
= 30V
8
V
DS
= 20V
1.0
4
0.5
I
D
= 2.0A, T
C
= 25
o
C
0
0
2
4
6
Q, GATE CHARGE (nC)
8
10
0
-75
-25
25
75
125
175
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 7. NORMALIZED V
GS(TH)
vs JUNCTION TEMPERATURE
FIGURE 8. GATE-SOURCE VOLTAGE vs GATE CHARGE
4
HIP0061
Typical Performance Curves
750
(Continued)
V
GS
= 0V, f = 1MHz, T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
5
C, CAPACITANCE (pF)
600
4
450
C
ISS
C
OSS
C
RSS
3
V
GS
= 10V
V
GS
= 5V
300
2
150
1
0
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
25
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 9. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 10. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
Z
θ
JC
, NORMALIZED THERMAL IMPEDANCE
10
T
C
= 25
o
C
1
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.1
NOTES:
1. DUTY FACTOR, D = t
1
/t
2
2. PEAK T
J
= P
DM
x (Z
θ
JC
) +T
C
10
-4
10
-3
t, RECTANGULAR PULSE DURATION (s)
10
-2
10
-1
10
-6
10
-5
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
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