技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L150R07W2E3_B11
EasyPACK模块采用第三代沟½栅/场终止IGBT3和第三代发射极控制二极管带有pressfit压接管脚和温度检测NTC
EasyPACKmodulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandPressFIT/NTC
初步数据/PreliminaryData
J
V
CES
= 650V
I
C nom
= 150A / I
CRM
= 300A
典型应用
•
三电平应用
•
太阳½应用
•
UPS系统
电气特性
•
增加阻断电压至650V
•
½电感设计
•
½开关损耗
•
½V
CEsat
机械特性
•
½热阻的三氧化二铝（Al
2
O
3
衬底
•
紧凑型设计
•
PressFIT压接技术
•
集成的安装夹½安装坚固
TypicalApplications
• 3-Level-Applications
• SolarApplications
• UPSSystems
ElectricalFeatures
• Increasedblockingvoltagecapabilityto650V
• Lowinductivedesign
• LowSwitchingLosses
• LowV
CEsat
MechanicalFeatures
• Al
2
O
3
SubstratewithLowThermalResistance
• Compactdesign
• PressFITContactTechnology
•
Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
ContentoftheCode
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
dateofpublication:2013-11-05
revision:2.1
1
ULapproved(E83335)
Digit
1-5
6-11
12-19
20-21
22-23
DMX-Code
preparedby:DK
approvedby:MB
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L150R07W2E3_B11
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
集电极－发射极电压
Collector-emittervoltage
连续集电极直流电流
ContinuousDCcollectorcurrent
集电极重复峰值电流
Repetitivepeakcollectorcurrent
总功率损耗
Totalpowerdissipation
栅极－发射极峰值电压
Gate-emitterpeakvoltage
最大额定值/MaximumRatedValues
T
vj
= 25°C
T
C
= 25°C, T
vj max
= 175°C
T
C
= 25°C, T
vj max
= 175°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 175°C
V
CES
650
150
150
300
335
+/-20
min.
I
C
= 150 A, V
GE
= 15 V
I
C
= 150 A, V
GE
= 15 V
I
C
= 150 A, V
GE
= 15 V
I
C
= 2,40 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 650 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 150 A, V
CE
= 300 V
V
GE
= ±15 V
R
Gon
= 3,3
Ω
I
C
= 150 A, V
CE
= 300 V
V
GE
= ±15 V
R
Gon
= 3,3
Ω
I
C
= 150 A, V
CE
= 300 V
V
GE
= ±15 V
R
Goff
= 3,3
Ω
I
C
= 150 A, V
CE
= 300 V
V
GE
= ±15 V
R
Goff
= 3,3
Ω
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
t
d on
4,9
typ.
1,45
1,60
1,70
5,8
1,60
2,0
9,30
0,285
0,085
0,10
0,11
0,04
0,045
0,045
0,30
0,33
0,34
0,09
0,13
0,14
1,20
1,75
1,95
4,15
5,10
5,40
1100
750
0,40
0,45
150
max.
1,90
V
V
V
V
µC
Ω
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
A
A
V
A
A
I
C nom
I
C
I
CRM
P
tot
V
GES
A
W
V
特征值/CharacteristicValues
集电极－发射极饱和电压
Collector-emittersaturationvoltage
栅极阈值电压
Gatethresholdvoltage
栅极电荷
Gatecharge
内部栅极电阻
Internalgateresistor
输入电容
Inputcapacitance
反向传输电容
Reversetransfercapacitance
集电极-发射极截止电流
Collector-emittercut-offcurrent
栅极-发射极漏电流
Gate-emitterleakagecurrent
开通延迟时间(电感负½½)
Turn-ondelaytime,inductiveload
上升时间(电感负½½)
Risetime,inductiveload
关断延迟时间(电感负½½)
Turn-offdelaytime,inductiveload
下降时间(电感负½½)
Falltime,inductiveload
开通损耗½量(每脉冲)
Turn-onenergylossperpulse
关断损耗½量(每脉冲）
Turn-offenergylossperpulse
短路数据
SCdata
结－外壳热阻
Thermalresistance,junctiontocase
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
preparedby:DK
approvedby:MB
6,5
1,0
400
t
r
t
d off
t
f
I
C
= 150 A, V
CE
= 300 V, L
S
= 35 nH
T
vj
= 25°C
V
GE
= ±15 V, di/dt = 2400 A/µs (T
vj
= 150°C) T
vj
= 125°C
R
Gon
= 3,3
Ω
T
vj
= 150°C
I
C
= 150 A, V
CE
= 300 V, L
S
= 35 nH
T
vj
= 25°C
V
GE
= ±15 V, du/dt = 3600 V/µs (T
vj
= 150°C) T
vj
= 125°C
R
Goff
= 3,3
Ω
T
vj
= 150°C
V
GE
≤
15 V, V
CC
= 360 V
V
CEmax
= V
CES
-L
sCE
·di/dt
每个IGBT/perIGBT
每个IGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
dateofpublication:2013-11-05
revision:2.1
2
t
P
≤
8 µs, T
vj
= 25°C
t
P
≤
6 µs, T
vj
= 150°C
E
on
E
off
I
SC
R
thJC
R
thCH
T
vj op
-40
0,45 K/W
K/W
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L150R07W2E3_B11
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
反向重复峰值电压
Repetitivepeakreversevoltage
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
I2t-值
I²t-value
最大额定值/MaximumRatedValues
T
vj
= 25°C
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
V
R
= 0 V, t
P
= 10 ms, T
vj
= 150°C
V
RRM
I
F
I
FRM
I²t
min.
I
F
= 150 A, V
GE
= 0 V
I
F
= 150 A, V
GE
= 0 V
I
F
= 150 A, V
GE
= 0 V
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
F
650
150
300
1700
1450
typ.
1,55
1,50
1,45
80,0
105
110
6,90
11,5
13,5
1,40
2,50
3,00
0,55
0,50
150
max.
1,95
V
V
V
A
A
A
µC
µC
µC
mJ
mJ
mJ
V
A
A
A²s
A²s
特征值/CharacteristicValues
正向电压
Forwardvoltage
反向恢复峰值电流
Peakreverserecoverycurrent
恢复电荷
Recoveredcharge
反向恢复损耗（每脉冲）
Reverserecoveryenergy
结－外壳热阻
Thermalresistance,junctiontocase
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
I
F
= 150 A, - di
F
/dt = 2400 A/µs (T
vj
=150°C) T
vj
= 25°C
V
R
= 300 V
T
vj
= 125°C
V
GE
= -15 V
T
vj
= 150°C
I
F
= 150 A, - di
F
/dt = 2400 A/µs (T
vj
=150°C) T
vj
= 25°C
V
R
= 300 V
T
vj
= 125°C
V
GE
= -15 V
T
vj
= 150°C
I
F
= 150 A, - di
F
/dt = 2400 A/µs (T
vj
=150°C) T
vj
= 25°C
V
R
= 300 V
T
vj
= 125°C
V
GE
= -15 V
T
vj
= 150°C
每个二极管/perdiode
每个二极管/perdiode
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
I
RM
Q
r
E
rec
R
thJC
R
thCH
T
vj op
-40
0,60 K/W
K/W
°C
preparedby:DK
approvedby:MB
dateofpublication:2013-11-05
revision:2.1
3
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L150R07W2E3_B11
初步数据
PreliminaryData
二极管,D5-D6/Diode,D5-D6
反向重复峰值电压
Repetitivepeakreversevoltage
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
I2t-值
I²t-value
最大额定值/MaximumRatedValues
T
vj
= 25°C
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
V
R
= 0 V, t
P
= 10 ms, T
vj
= 150°C
V
RRM
I
F
I
FRM
I²t
min.
I
F
= 150 A, V
GE
= 0 V
I
F
= 150 A, V
GE
= 0 V
I
F
= 150 A, V
GE
= 0 V
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 150°C
V
F
650
150
300
2450
2150
typ.
1,55
1,50
1,45
80,0
105
110
6,90
11,5
13,5
1,40
2,50
3,00
0,50
0,45
150
max.
1,95
V
V
V
A
A
A
µC
µC
µC
mJ
mJ
mJ
V
A
A
A²s
A²s
特征值/CharacteristicValues
正向电压
Forwardvoltage
反向恢复峰值电流
Peakreverserecoverycurrent
恢复电荷
Recoveredcharge
反向恢复损耗（每脉冲）
Reverserecoveryenergy
结－外壳热阻
Thermalresistance,junctiontocase
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
I
F
= 150 A, - di
F
/dt = 2400 A/µs (T
vj
=150°C) T
vj
= 25°C
V
R
= 300 V
T
vj
= 125°C
T
vj
= 150°C
I
F
= 150 A, - di
F
/dt = 2400 A/µs (T
vj
=150°C) T
vj
= 25°C
V
R
= 300 V
T
vj
= 125°C
T
vj
= 150°C
I
F
= 150 A, - di
F
/dt = 2400 A/µs (T
vj
=150°C) T
vj
= 25°C
V
R
= 300 V
T
vj
= 125°C
T
vj
= 150°C
每个二极管/perdiode
每个二极管/perdiode
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
I
RM
Q
r
E
rec
R
thJC
R
thCH
T
vj op
-40
0,55 K/W
K/W
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
R100偏差
DeviationofR100
耗散功率
Powerdissipation
B-值
B-value
B-值
B-value
B-值
B-value
min.
T
C
= 25°C
T
C
= 100°C, R
100
= 493
Ω
T
C
= 25°C
R
2
= R
25
exp [B
25/50
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/80
(1/T
2
- 1/(298,15 K))]
R
2
= R
25
exp [B
25/100
(1/T
2
- 1/(298,15 K))]
R
25
∆R/R
P
25
B
25/50
B
25/80
B
25/100
-5
typ.
5,00
3375
3411
3433
max.
5
20,0
kΩ
%
mW
K
K
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:DK
approvedby:MB
dateofpublication:2013-11-05
revision:2.1
4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F3L150R07W2E3_B11
初步数据
PreliminaryData
RMS, f = 50 Hz, t = 1 min.
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
V
ISOL
CTI
min.
2,5
Al
2
O
3
11,5
6,3
10,0
5,0
> 200
typ.
15
2,00
-
39
max.
125
80
nH
mΩ
°C
N
g
kV
模块/Module
绝缘测试电压
Isolationtestvoltage
内部绝缘
Internalisolation
爬电距离
Creepagedistance
电气间隙
Clearance
相对电痕指数
Comperativetrackingindex
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
储存温度
Storagetemperature
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
重量
Weight
mm
mm
T
C
=25°C,每个开关/perswitch
L
sCE
R
CC'+EE'
T
stg
F
G
-40
40
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25A rms per connector pin.
preparedby:DK
approvedby:MB
dateofpublication:2013-11-05
revision:2.1
5
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