PD - 91358E
IRLZ24NS/L
Logic-Level Gate Drive
l
Advanced Process Technology
l
Surface Mount (IRLZ24NS)
l
Low-profile through-hole (IRLZ24NL)
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
l
HEXFET
®
Power MOSFET
D
V
DSS
= 55V
R
DS(on)
= 0.06Ω
G
I
D
= 18A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ24NL) is available for low-
profile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
18
13
72
3.8
45
0.30
±16
68
11
4.5
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
3.3
40
Units
°C/W
5/12/98
IRLZ24NS/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
55
–––
–––
–––
–––
1.0
8.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.061
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.1
74
20
29
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.060
V
GS
= 10V, I
D
= 11A
0.075
Ω
V
GS
= 5.0V, I
D
= 11A
0.105
V
GS
= 4.0V, I
D
= 9.0A
2.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 11A
25
V
DS
= 55V, V
GS
= 0V
µA
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 16V
nA
-100
V
GS
= -16V
15
I
D
= 11A
3.7
nC V
DS
= 44V
8.5
V
GS
= 5.0V, See Fig. 6 and 13
–––
V
DD
= 28V
–––
I
D
= 11A
ns
–––
R
G
= 12Ω, V
GS
= 5.0V
–––
R
D
= 2.4Ω, See Fig. 10
Between lead,
7.5 –––
nH
and center of die contact
480 –––
V
GS
= 0V
130 –––
pF
V
DS
= 25V
61 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 18
showing the
A
G
integral reverse
––– ––– 72
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
––– 60
90
ns
T
J
= 25°C, I
F
= 11A
––– 130 200
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
11A, di/dt
≤
290A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
V
DD
= 25V, starting T
J
= 25°C, L = 790µH
R
G
= 25Ω, I
AS
= 11A. (See Figure 12)
Pulse width
≤
300µs; duty cycle
≤
2%.
Uses IRLZ24N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRLZ24NS/L
100
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
100
I
D
, D rain-to-S ource C urrent (A )
10
I
D
, D rain-to-S ource C urrent (A )
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
10
2 .5V
1
1
2 .5V
2 0µ s P U LS E W ID T H
T
J
= 2 5°C
0.1
1
10
0.1
A
0.1
0.1
1
2 0µ s P U LS E W ID T H
T
J
= 1 75 °C
10
100
A
100
V
D S
, D rain-to-S ource V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
T
J
= 2 5 °C
R
D S (on )
, D rain-to-S ource O n R esistance
(N orm alized)
I
D
= 1 8A
I
D
, D ra in -to-S ourc e C urrent (A)
2.5
T
J
= 1 7 5 °C
10
2.0
1.5
1
1.0
0.5
0.1
2
3
4
5
6
V
DS
= 1 5V
2 0µ s P U L S E W ID TH
7
8
9
10
A
0.0
-60
-40
-20
0
20
40
60
80
V
G S
= 10 V
100 120 140 160 180
A
V
G S
, G ate-to -So urce Voltag e (V)
T
J
, Junction T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRLZ24NS/L
800
C , Capacitance (pF)
600
C
iss
V
G S
, G a te-to-S ou rc e V o ltag e (V )
V
GS
C
is s
C
rs s
C
o ss
=
=
=
=
0V ,
f = 1M H z
C
g s
+ C
g d
, C
d s
S H O R T E D
C
gd
C
d s
+ C
gd
15
I
D
= 1 1A
V
D S
= 44 V
V
D S
= 28 V
12
9
400
C
oss
6
200
C
rss
3
0
1
10
100
A
0
0
4
8
FO R TE S T CIR C U IT
S E E FIG U R E 1 3
12
16
20
A
V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, T otal G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
S D
, R everse Drain C urrent (A )
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D S (o n)
I
D
, D rain Current (A )
100
10µ s
T
J
= 1 75 °C
T
J
= 2 5°C
10
10
100µ s
1
0.4
0.8
1.2
1.6
V
G S
= 0 V
A
1
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le P u lse
10
1m s
10m s
100
2.0
A
V
S D
, S ourc e-to-D rain V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
IRLZ24NS/L
20
V
DS
16
R
D
V
GS
R
G
D.U.T.
V
DD
-
+
I
D
, D rain C u rren t (A m ps )
12
5.0V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
8
Fig 10a.
Switching Time Test Circuit
4
V
DS
90%
0
25
50
75
100
125
150
A
175
T
C
, C ase T em perature (°C )
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
T he rm al R es p ons e (Z
th J C
)
D = 0 .50
1
0 .2 0
0 .1 0
0 .0 5
0 .0 2
0 .01
0.1
P
D M
SIN G LE P U LSE
(TH ER M AL R ES PO N SE )
N o te s :
1 . D u ty fa c to r D = t
t
1
t2
1
/ t
2
0.01
0.00001
2 . P e a k T
J
= P
D M
x Z
th J C
+ T C
A
1
0.0001
0.001
0.01
0.1
t
1
, R ectan gu lar P ulse D u ratio n (se c)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
