VS-50RIA Series
www.vishay.com
Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 50 A
FEATURES
•
•
•
•
•
•
•
•
High current rating
Excellent dynamic characteristics
dV/dt = 1000 V/μs option
Superior surge capabilities
Standard package
Metric threads version available
Types up to 1200 V V
DRM
/V
RRM
Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TO-208AC (TO-65)
PRODUCT SUMMARY
Package
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
TO-208AC (TO-65)
Single SCR
50 A
100 V to 1200 V
1.60 V
100 mA
-40 °C to 125 °C
TYPICAL APPLICATIONS
•
•
•
•
Phase control applications in converters
Lighting circuits
Battery charges
Regulated power supplies and temperature and speed
control circuit
• Can be supplied to meet stringent military, aerospace and
other high reliability requirements
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
50 Hz
60 Hz
50 Hz
60 Hz
T
C
TEST CONDITIONS
VALUES
50
94
80
1430
1490
10.18
9.30
100 to 1200
110
-40 to 125
UNITS
A
°C
A
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
10
20
40
VS-50RIA
60
80
100
120
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
(1)
V
100
200
400
600
800
1000
1200
V
RSM
, MAXIMUM
I
DRM
/I
RRM
MAXIMUM AT
NON-REPETITIVE PEAK VOLTAGE
(2)
T
J
= T
J
MAXIMUM
mA
V
150
300
500
700
900
1100
1300
15
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2)
For voltage pulses with t
5 ms
p
Revision: 11-Mar-14
Document Number: 93711
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50RIA Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Maximum on-state voltage
Maximum holding current
Latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
TEST CONDITIONS
180° sinusoidal conduction
VALUES
50
94
80
1430
1490
1200
Sinusoidal half wave,
initial T
J
= T
J
maximum
1255
10.18
9.30
7.20
6.56
101.8
0.94
1.08
4.08
m
( x I
T(AV)
< I < 20 x
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 157 A, T
J
= 25 °C
T
J
= 25 °C, anode supply 22 V, resistive load,
initial I
T
= 2 A
Anode supply 6 V, resistive load
3.34
1.60
200
400
V
mA
kA
2
s
V
kA
2
s
A
UNITS
A
°C
A
t = 0.1 to 10 ms, no voltage reapplied,
T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
( x I
T(AV)
< I < 20 x
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
SWITCHING
PARAMETER
Maximum rate of
rise of turned-on current
Typical delay time
Typical turn-off time
V
DRM
600 V
V
DRM
1600 V
dI/dt
SYMBOL
TEST CONDITIONS
T
C
= 125 °C, V
DM
= Rated V
DRM
,
Gate pulse = 20 V, 15
,
t
p
= 6 μs, t
r
= 0.1 μs maximum
I
TM
= (2 x rated dI/dt) A
T
C
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 10 A dc resistive circuit
Gate pulse = 10 V, 15
source, t
p
= 20 μs
T
C
= 125 °C, I
TM
= 50 A, reapplied dV/dt = 20 V/μs
dIr/dt = - 10 A/μs, V
R
= 50 V
VALUES
200
A/μs
100
0.9
μs
110
UNITS
t
d
t
q
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
SYMBOL
dV/dt
TEST CONDITIONS
T
J
= T
J
maximum linear to 100 % rated V
DRM
T
J
= T
J
maximum linear to 67 % rated V
DRM
VALUES
200
500
(1)
V/μs
UNITS
Note
(1)
Available with dV/dt = 1000 V/μs, to complete code add S90 i.e. 50RIA120S90
Revision: 11-Mar-14
Document Number: 93711
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50RIA Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+V
GM
-V
GM
T
J
= - 40 °C
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
V
GT
I
GD
V
GD
T
J
= - 40 °C
T
J
= 25 °C
T
J
= T
J
maximum,
V
DRM
= Rated voltage
T
J
= T
J
maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
VALUES
10
W
2.5
2.5
20
V
10
250
100
50
3.5
V
2.5
5.0
0.2
mA
V
mA
A
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Allowable mounting torque
Lubricated threads
2.3
TEST CONDITIONS
VALUES
-40 to 125
0.35
K/W
0.25
3.4
+ 0 - 10
%
UNITS
°C
(30)
+ 0 - 10
%
N·m
(lbf · in)
(20)
Approximate weight
Case style
See dimensions - link at the end of datasheet
28
1.0
g
oz.
TO-208AC (TO-65)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.078
0.094
0.120
0.176
0.294
RECTANGULAR CONDUCTION
0.057
0.098
0.130
0.183
0.296
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 11-Mar-14
Document Number: 93711
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50RIA Series
www.vishay.com
Vishay Semiconductors
Maximum Average On-state Power Loss (W)
100
90
80
70
60
50
RMS Limit
40
30
20
10
0
0
10
20
30
40
50
60
70
80
Average On-state Current (A)
Conduction Period
Maximum Allowable Case Temperature (°C)
130
50RIA Series
R
thJC
(DC) = 0.35 K/W
120
Conduction Angle
DC
180°
120°
90°
60°
30°
110
30°
100
60°
90°
120°
180°
90
0
10
20
30
40
50
60
Average On-state Current (A)
50RIA Series
T = 125°C
J
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
Maximum Allowable Case Temperature (°C)
130
Peak Half Sine Wave On-state Current (A)
50RIA Series
R
thJC
(DC) = 0.35 K/W
120
1300
1200
1100
1000
900
800
700
600
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
110
Conduction Period
100
90
60°
30°
80
0
10
20
30
90°
120°
180°
40
50
60
DC
70
80
50RIA Series
10
100
Average On-state Current (A)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average On-state Power Loss (W)
80
Peak Half Sine Wave On-state Current (A)
1500
70
60
50
40
30
180°
120°
90°
60°
30°
RMS Limit
1400
1300
1200
1100
1000
900
800
700
600
500
0.01
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125°C
No Voltage Reapplied
Rated V
RRM
Reapplied
Conduction Angle
20
10
0
0
10
20
50RIA Series
T = 125°C
J
50RIA Series
30
40
50
0.1
Pulse Train Duration (s)
1
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Mar-14
Document Number: 93711
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50RIA Series
www.vishay.com
Vishay Semiconductors
1000
Instantaneous On-state Current (A)
100
T = 25°C
J
10
T = 125°C
J
50RIA Series
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous On-state Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Transient Thermal Impedance Z
thJ-hs
(K/W)
1
Steady State Value
R
thJ-hs
= 0.35 K/W
0.1
50RIA Series
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 30 ohms; tr<=0.5 µs
b) Recommended load line for
<=30% rated di/dt : 20V, 65 ohms
tr<=1 µs
10
(b)
(a)
Tj=-40 °C
Tj=25 °C
Instantaneous Gate Voltage (V)
(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2.5ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500µs
Tj=125 °C
1
(1) (2)
(3) (4)
VGD
IGD
0.1
0.001
0.01
50RIA Series
0.1
1
Frequency Limited by PG(AV)
10
100
1000
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
Revision: 11-Mar-14
Document Number: 93711
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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