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BCP56 Series,
SBCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT−223
package, which is designed for medium power surface mount
applications.
Features
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•
High Current: 1.0 A
•
The SOT−223 package can be soldered using wave or reflow. The
•
•
•
•
•
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
Available in 12 mm Tape and Reel
Use BCP56T1 to Order the 7 inch/1000 Unit Reel
Use BCP56T3 to Order the 13 inch/4000 Unit Reel
PNP Complement is BCP53T1
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
4
1
2
3
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= 25°C (Note 1)
Derate above 25°C
Operating and Storage
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
Value
80
100
5
1
1.5
12
−65
to 150
Unit
Vdc
Vdc
Vdc
Adc
W
mW/°C
°C
1
Symbol
R
qJA
Max
83.3
Unit
°C/W
xx
= Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
T
J
, T
stg
AYW
xxxxxG
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
(surface mounted)
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
T
L
260
10
°C
Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 8
1
Publication Order Number:
BCP56T1/D
BCP56 Series, SBCP56 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Collector−Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
Emitter−Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector−Base Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
Emitter−Base Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 5.0 mA, V
CE
= 2.0 V) All Part Types
(I
C
= 150 mA, V
CE
= 2.0 V)BCP56T1, SBCP56T1, SBCP56T3
BCP56−10T1, SBCP56−10T1
BCP56−16T1, SBCP56−16T1, SBCP56−16T3
(I
C
= 500 mA, V
CE
= 2.0 V)All Types
Collector−Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
Base−Emitter On Voltage
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain
−
Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 35 MHz)
2. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%
f
T
−
130
−
MHz
h
FE
−
25
40
63
100
25
−
−
−
−
−
−
−
−
−
−
250
160
250
−
0.5
1.0
Vdc
Vdc
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
100
80
5.0
−
−
−
−
−
−
−
−
−
−
100
10
Vdc
Vdc
Vdc
nAdc
mAdc
Symbol
Min
Typ
Max
Unit
V
CE(sat)
V
BE(on)
ORDERING INFORMATION
Device
BCP56T1G
SBCP56T1G
BCP56T3G
SBCP56T3G
BCP56−10T1G
SBCP56−10T1G
BCP56−16T1G
SBCP56−16T1G
BCP56−16T3G
SBCP56−16T3G
BH−16
BH−16
BH−10
BH
Marking
BH
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
†
1000 / Tape & Reel
4000 / Tape & Reel
1000 / Tape & Reel
1000 / Tape & Reel
4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
BCP56 Series, SBCP56 Series
TYPICAL ELECTRICAL CHARACTERISTICS
1000
hFE, DC CURRENT GAIN
T
J
= 125°C
T
J
= 25°C
100
T
J
= - 55°C
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
1000
Figure 1. DC Current Gain
f T, CURRENT‐GAIN — BANDWIDTH PRODUCT (MHz)
1000
80
60
T
J
= 25°C
C, CAPACITANCE (pF)
40
C
ibo
100
20
10
8.0
6.0
C
obo
0.2
0.5 1.0 2.0
5.0 10
20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
10
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
4.0
0.1
Figure 2. Current−Gain
−
Bandwidth Product
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
150°C
25°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
150°C
−55°C
25°C
I
C
/I
B
= 10
Figure 3. Capacitance
0.1
−55°C
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
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3
BCP56 Series, SBCP56 Series
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
150°C
−55°C
25°C
V
CE
= 2 V
1.0
T
J
= 25°C
0.8
I
C
= 10 mA
50
mA
100 mA
250 mA
500 mA
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
VCE , COLLECTOR‐EMITTER VOLTAGE (VOLTS)
0.6
0.4
0.2
0
0.05
0.001
0.01
0.1
1
0.1
0.2
I
C
, COLLECTOR CURRENT (A)
1.0 2.0
0.5
5.0
10
I
C
, COLLECTOR CURRENT (mA)
20
50
Figure 6. Base Emitter Voltage vs. Collector
Current
Figure 7. Collector Saturation Region
1
I
C
, COLLECTOR CURRENT (A)
1S
100 mS
10 mS
0.1
1 mS
P
D
, POWER DISSIPATION (W)
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0.1
1
10
0.0
0
20
40
60
80
120
100
T
A
, AMBIENT TEMPERATURE (°C)
140
160
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 8. Safe Operating Area
Figure 9. Power Derating Curve
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