NVMFS5C406NL
MOSFET
– Power, Single
N-Channel
40 V, 0.7 mW, 362 A
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
NVMFS5C406NLWF
−
Wettable Flank Option for Enhanced Optical
Inspection
•
AEC−Q101 Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Notes 1, 3)
Power Dissipation
R
qJC
(Note 1)
Continuous Drain
Current R
qJA
(Notes 1, 2, 3)
Power Dissipation
R
qJA
(Notes 1, 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
40
±20
362
256
179
90
53
38
3.9
1.9
900
−55
to
+175
149
498
260
A
°C
A
mJ
°C
W
A
W
Unit
V
V
A
www.onsemi.com
V
(BR)DSS
40 V
R
DS(ON)
MAX
0.7 mW @ 10 V
1.1 mW @ 4.5 V
I
D
MAX
362 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
1
D
S
S
S
G
D
XXXXXX
AYWZZ
D
D
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 32.5 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XXXXXX = 5C406L
XXXXXX =
(NVMFS5C406NL) or
XXXXXX =
406LWF
XXXXXX =
(NVMFS5C406NLWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case
−
Steady State
Junction−to−Ambient
−
Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
0.84
38.7
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2019
July, 2019
−
Rev. 1
1
Publication Order Number:
NVMFS5C406NL/D
NVMFS5C406NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 50 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 10 V, V
DS
= 32 V,
I
D
= 50 A, R
G
= 2.5
W
V
GS
= 10 V, V
DS
= 20 V; I
D
= 50 A
V
GS
= 10 V, V
DS
= 20 V; I
D
= 50 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 20 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 50 A
0.78
0.64
93
44
50
174
nC
ns
1.2
V
14
47
112
131
ns
9400
4600
140
149
15.1
27
22
3.1
V
nC
pF
I
D
= 50 A
I
D
= 50 A
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
40
16
10
250
100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
= 20 V
V
GS
= V
DS
, I
D
= 280
mA
1.2
−5.7
0.55
0.90
215
2.0
V
mV/°C
0.7
1.1
mW
S
V
DS
=15 V, I
D
= 50 A
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVMFS5C406NL
TYPICAL CHARACTERISTICS
500
450
I
D
, DRAIN CURRENT (A)
400
350
300
250
200
150
100
50
0
0
0.5
1.0
1.5
2.0
2.5
3.2 V
3.0 V
2.8 V
2.6 V
3.0
3.4 V
500
450
I
D
, DRAIN CURRENT (A)
400
350
300
250
200
150
100
50
0
0
0.5
1.0
T
J
= 125°C
1.5
2.0
2.5
T
J
=
−55°C
3.0
3.5
4.0
4.5 5.0
T
J
= 25°C
V
DS
= 10 V
VGS = 3.8 V to 10 V
3.6 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
5
4
3
2
1
0
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
2.0
Figure 2. Transfer Characteristics
T
J
= 25°C
I
DS
= 50 A
T
J
= 25°C
1.6
1.2
V
GS
= 4.5 V
0.8
V
GS
= 10 V
0.4
0
2
3
4
5
6
7
8
9
10
10
30
50
70
90
110
130
150
170 190
V
GS
, GATE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.0
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
−50 −25
0
25
50
75
100
125
150
175
V
GS
= 10 V
I
D
= 50 A
I
DSS
, LEAKAGE (nA)
1M
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 175°C
100K
10K
1K
100
10
1
T
J
= 25°C
T
J
= 150°C
T
J
= 125°C
T
J
= 85°C
5
10
15
20
25
30
35
40
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
NVMFS5C406NL
TYPICAL CHARACTERISTICS
10K
C
ISS
10
9
8
7
6
5
4
3
2
1
0
0
30
60
90
V
DS
= 20 V
I
D
= 50 A
T
J
= 25°C
120
150
Q
GS
Q
GD
C, CAPACITANCE (pF)
10K
C
OSS
1K
100
10
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
0
5
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C
RSS
35
40
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
10K
100
I
S
, SOURCE CURRENT (A)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
1K
t, TIME (ns)
V
GS
= 10 V
V
DS
= 32 V
I
D
= 50 A
t
d(off)
t
f
100
t
r
t
d(on)
10
T
J
= 125°C
10
1
1
10
R
G
, GATE RESISTANCE (W)
100
1
0.3
T
J
= 25°C
0.4
0.5
0.6
0.7
T
J
=
−55°C
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
I
PEAK
DRAIN CURRENT (A)
100
Figure 10. Diode Forward Voltage vs. Current
T
J(initial)
= 25°C
I
D
, DRAIN CURRENT (A)
100
10
ms
10
V
GS
≤
10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
0.5 ms
1 ms
10 ms
10
T
J(initial)
= 100°C
1
0.1
100
1000
1
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. I
PEAK
vs. Time in Avalanche
www.onsemi.com
4
NVMFS5C406NL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
10
R
qJA
(t) (°C/W)
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
0.1
1
10
100
1000
0.01
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
NVMFS5C406NLT1G
NVMFS5C406NLWFT1G
Marking
5C406L
406LWF
Package
DFN5
(Pb−Free)
DFN5
(Pb−Free, Wettable Flanks)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
