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HB52D168GB-A6BL: 产品描述Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-144; 产品类别存储存储; 文件大小86KB，共19页; 制造商Hitachi （Renesas ）; 官网地址http://www.renesas.com/eng/

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HB52D168GB-A6BL概述

Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-144

HB52D168GB-A6BL规格参数

参数名称	属性值
零件包装代码	DIMM
包装说明	,
针数	144
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	SINGLE BANK PAGE BURST
最长访问时间	6 ns
其他特性	AUTO/SELF REFRESH
JESD-30 代码	R-XDMA-N144
内存密度	1073741824 bit
内存集成电路类型	SYNCHRONOUS DRAM MODULE
内存宽度	64
功能数量	1
端口数量	1
端子数量	144
字数	16777216 words
字数代码	16000000
工作模式	SYNCHRONOUS
最高工作温度	65 °C
最低工作温度
组织	16MX64
封装主体材料	UNSPECIFIED
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
认证状态	Not Qualified
自我刷新	YES
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子位置	DUAL
Base Number Matches	1

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HB52F168GB-B

HB52D168GB-B

128 MB Unbuffered SDRAM Micro DIMM

16-Mword

64-bit, 133/100 MHz Memory Bus, 1-Bank Module

(4 pcs of 16 M

16 components)

PC133/100 SDRAM

ADE-203-1219A (Z)

Rev. 1.0

Oct. 27, 2000

Description

The HB52F168GB and HB52D168GB are a 16M

1 banks Synchronous Dynamic RAM Micro Dual

In-line Memory Module (Micro DIMM), mounted 4 pieces of 256-Mbit SDRAM (HM5225165BTT) sealed

in TSOP package and 1 piece of serial EEPROM (2-kbit EEPROM) for Presence Detect (PD). An outline of

the products is 144-pin Zig Zag Dual tabs socket type compact and thin package. Therefore, they make high

density mounting possible without surface mount technology. They provide common data inputs and outputs.

Decoupling capacitors are mounted beside TSOP on the module board.

Features

•

144-pin Zig Zag Dual tabs socket type (dual lead out)



Outline: 38.00 mm (Length)

30.00 mm (Height)

3.80 mm (Thickness)



Lead pitch: 0.50 mm

•

3.3 V power supply

•

Clock frequency: 133/100 MHz (max)

•

LVTTL interface

•

Data bus width:

64 Non parity

•

Single pulsed

RAS

•

4 Banks can operates simultaneously and independently

•

Burst read/write operation and burst read/single write operation capability

•

Programmable burst length: 1/2/4/8

•

2 variations of burst sequence



Sequential



Interleave

HB52D168GB-A6BL相似产品对比

	HB52D168GB-A6BL	HB52D168GB-A6B	HB52D168GB-B6B	HB52D168GB-B6BL	HB52F168GB-75B	HB52F168GB-75BL
描述	Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-144	Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-144	Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-144	Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-144	Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-144	Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-144
零件包装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
针数	144	144	144	144	144	144
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
最长访问时间	6 ns	6 ns	6 ns	6 ns	5.4 ns	5.4 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 代码	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144	R-XDMA-N144
内存密度	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit	1073741824 bit
内存集成电路类型	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
内存宽度	64	64	64	64	64	64
功能数量	1	1	1	1	1	1
端口数量	1	1	1	1	1	1
端子数量	144	144	144	144	144	144
字数	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
字数代码	16000000	16000000	16000000	16000000	16000000	16000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	65 °C	65 °C	65 °C	65 °C	65 °C	65 °C
组织	16MX64	16MX64	16MX64	16MX64	16MX64	16MX64
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
自我刷新	YES	YES	YES	YES	YES	YES
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	NO	NO	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Base Number Matches	1	1	1	1	-	-

HB52D168GB-A6BL

HB52D168GB-A6BL概述

HB52D168GB-A6BL规格参数

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HB52D168GB-A6BL相似产品对比

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