PD-93789F
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number
IRHF57130
IRHF53130
IRHF54130
IRHF58130
Radiation Level
100K Rads (Si)
300K Rads (Si)
500K Rads (Si)
1000K Rads (Si)
R
DS(on)
0.08Ω
0.08Ω
0.08Ω
0.10Ω
I
D
11.7A
11.7A
11.7A
QPL Part Number
JANSR2N7493T2
JANSF2N7493T2
JANSG2N7493T2
IRHF57130
JANSR2N7493T2
100V, N-CHANNEL
REF: MIL-PRF-19500/701
5
TECHNOLOGY
11.7A JANSH2N7493T2
TO-39
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Identical Pre- & Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
11.7
7.4
47
25
0.2
±20
173
11.7
2.5
4.9
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
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1
10/27/11
IRHF57130, JANSR2N7493T2
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
—
—
2.0
8.7
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
—
—
0.08
4.0
—
10
25
100
-100
50
7.4
20
25
100
35
30
—
V
V/°C
Ω
V
S
µA
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 7.4A
Ã
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 7.4A
Ã
VDS= 80V ,VGS = 0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 11.7A
VDS = 50V
VDD = 50V, ID = 11.7A
VGS =12V, RG = 7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1038
362
45
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
11.7
47
1.5
202
850
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = 11.7A, VGS = 0V
Ã
Tj = 25°C, IF = 11.7A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
—
—
—
—
5.0
175
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHF57130, JANSR2N7493T2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Static Drain-to-Source
Ã
On-State Resistance (TO-39)
Diode Forward Voltage
Ã
Up to 500K Rads(Si)
1
1000K Rads (Si)
2
Units
Min
Max
Min
Max
100
2.0
—
—
—
—
—
—
—
4.0
100
-100
10
0.064
0.08
1.5
100
1.5
—
—
—
—
—
—
—
4.0
100
-100
25
0.08
0.10
1.5
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
= 80V, V
GS
= 0V
V
GS
= 12V, I
D
=7.4A
V
GS
= 12V, I
D
=7.4A
V
GS
= 0V, IS = 11.7A
1. Part numbers IRHF57130 (JANSR2N7493T2), IRHF53130 (JANSF2N7493T2) and IRHF54130 (JANSG2N7493T2)
2. Part number IRHF58130 (JANSH2N7493T2)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm ))
38 ± 5%
61 ± 5%
84 ± 5%
2
Energy
(MeV)
300 ± 7.5%
330 ± 7.5%
350 ± 10%
Range
(µm)
38 ± 7.5%
31 ± 10%
28 ± 7.5%
@VGS =
@VGS =
VDS (V)
@VGS =
@VGS =
@VGS =
0V
100
100
100
-5V
100
100
100
-10V
100
100
80
-15V
100
35
25
-20V
100
25
-
120
100
80
60
40
20
0
0
-5
-10
Bias VGS (V)
-15
-20
Bias VDS (V)
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHF57130, JANSR2N7493T2
Pre-Irradiation
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1000
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
10
10
5.0V
5.0V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
T
J
= 25
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 11.7A
I
D
, Drain-to-Source Current (A)
2.0
100
T
J
= 150
°
C
1.5
1.0
10
0.5
1
V DS =
15
50V
20µs PULSE WIDTH
5
7
9
11
13
15
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHF57130, JANSR2N7493T2
2000
1600
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 11.7A
16
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
C, Capacitance (pF)
1200
Ciss
Coss
12
800
8
400
4
Crss
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
20
30
40
50
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
T
J
= 25
°
C
T
J
= 150
°
C
I
SD
, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
10
100µs
1ms
1
10ms
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
DC
1
0.1
0.0
V
GS
= 0 V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.01
V
SD
,Source-to-Drain Voltage (V)
1000
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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