MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC556,B
BC557,A,B,C
BC558B
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC556
–65
–80
BC557
–45
–50
–5.0
–100
625
5.0
1.5
12
– 55 to +150
BC558
–30
–30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
V(BR)CEO
BC556
BC557
BC558
V(BR)CBO
BC556
BC557
BC558
V(BR)EBO
BC556
BC557
BC558
ICES
BC556
BC557
BC558
BC556
BC557
BC558
—
—
—
—
—
—
–2.0
–2.0
–2.0
—
—
—
–100
–100
–100
–4.0
–4.0
–4.0
nA
–5.0
–5.0
–5.0
—
—
—
—
—
—
–80
–50
–30
—
—
—
—
—
—
V
–65
–45
–30
—
—
—
—
—
—
V
V
Collector – Base Breakdown Voltage
(IC = –100
µAdc)
Emitter – Base Breakdown Voltage
(IE = –100
m
Adc, IC = 0)
Collector–Emitter Leakage Current
(VCES = –40 V)
(VCES = –20 V)
(VCES = –20 V, TA = 125°C)
µA
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–123
BC556,B BC557,A,B,C BC558B
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10
µAdc,
VCE = –5.0 V)
hFE
BC557A
BC556B/557B/558B
BC557C
BC556
BC557
BC558
BC557A
BC556B/557B/558B
BC557C
BC557A
BC556B/557B/558B
BC557C
VCE(sat)
—
—
—
VBE(sat)
—
—
VBE(on)
–0.55
—
–0.62
–0.7
–0.7
–0.82
–0.7
–1.0
—
—
V
–0.075
–0.3
–0.25
–0.3
–0.6
–0.65
V
—
—
—
120
120
120
120
180
420
—
—
—
90
150
270
—
—
—
170
290
500
120
180
300
—
—
—
500
800
800
220
460
800
—
—
—
V
—
(IC = –2.0 mAdc, VCE = –5.0 V)
(IC = –100 mAdc, VCE = –5.0 V)
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –10 mAdc, IB = see Note 1)
(IC = –100 mAdc, IB = –5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –100 mAdc, IB = –5.0 mAdc)
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz)
fT
BC556
BC557
BC558
Cob
NF
BC556
BC557
BC558
hfe
BC556
BC557/558
BC557A
BC556B/557B/558B
BC557C
125
125
125
240
450
—
—
220
330
600
500
900
260
500
900
—
—
—
2.0
2.0
2.0
10
10
10
—
—
—
—
—
280
320
360
3.0
—
—
—
6.0
pF
dB
MHz
Output Capacitance
(VCB = –10 V, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 V,
RS = 2.0 k , f = 1.0 kHz,
∆f
= 200 Hz)
W
Small–Signal Current Gain
(IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz)
Note 1: IC = –10 mAdc on the constant base current characteristics, which yields the point IC = –11 mAdc, VCE = –1.0 V.
2–124
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC556,B BC557,A,B,C BC558B
BC557/BC558
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
VCE = –10 V
TA = 25°C
V, VOLTAGE (VOLTS)
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
VCE(sat) @ IC/IB = 10
–0.5 –1.0 –2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mAdc)
–50
–100
VBE(on) @ VCE = –10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
0.3
0.2
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50
IC, COLLECTOR CURRENT (mAdc)
–100 –200
0
–0.1 –0.2
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
–2.0
θ
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
VCE , COLLECTOR–EMITTER VOLTAGE (V)
TA = 25°C
–1.6
1.0
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
–1.2
IC =
–10 mA
IC = –50 mA
IC = –20 mA
IC = –200 mA
IC = –100 mA
–0.8
–0.4
0
–0.02
–0.1
–1.0
IB, BASE CURRENT (mA)
–10 –20
–0.2
–10
–1.0
IC, COLLECTOR CURRENT (mA)
–100
Figure 3. Collector Saturation Region
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
Figure 4. Base–Emitter Temperature Coefficient
10
7.0
C, CAPACITANCE (pF)
5.0
Cob
Cib
TA = 25°C
400
300
200
150
100
80
60
40
30
20
–0.5
VCE = –10 V
TA = 25°C
3.0
2.0
1.0
–0.4 –0.6
–1.0
–2.0
–4.0 –6.0
–10
–20 –30 –40
–1.0
–2.0 –3.0
–5.0
–10
–20
–30
–50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–125
BC556,B BC557,A,B,C BC558B
BC556
–1.0
hFE , DC CURRENT GAIN (NORMALIZED)
VCE = –5.0 V
TA = 25°C
2.0
1.0
0.5
V, VOLTAGE (VOLTS)
TJ = 25°C
–0.8
VBE(sat) @ IC/IB = 10
–0.6
VBE @ VCE = –5.0 V
–0.4
–0.2
0.2
0
–0.2
VCE(sat) @ IC/IB = 10
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC, COLLECTOR CURRENT (AMP)
–0.5
–50 –100 –200
–5.0 –10 –20
–1.0 –2.0
IC, COLLECTOR CURRENT (mA)
–0.1 –0.2
Figure 7. DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
–2.0
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
–1.0
–1.6
IC =
–10 mA
–20 mA
–50 mA
–100 mA –200 mA
–1.4
–1.2
–1.8
θ
VB for VBE
–55°C to 125°C
–0.8
–2.2
–0.4
TJ = 25°C
0
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
IB, BASE CURRENT (mA)
–5.0
–10
–20
–2.6
–3.0
–0.2
–0.5 –1.0
–50
–2.0
–5.0 –10 –20
IC, COLLECTOR CURRENT (mA)
–100 –200
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
f T, CURRENT–GAIN – BANDWIDTH PRODUCT
40
TJ = 25°C
C, CAPACITANCE (pF)
20
Cib
500
VCE = –5.0 V
200
100
50
10
8.0
6.0
4.0
2.0
–0.1 –0.2
Cob
20
–0.5 –1.0 –2.0
–5.0 –10 –20
VR, REVERSE VOLTAGE (VOLTS)
–50 –100
–100
–1.0
–10
IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
2–126
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC556,B BC557,A,B,C BC558B
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.05
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Z
θJC
(t) = (t) R
θJC
R
θJC
= 83.3°C/W MAX
Z
θJA
(t) = r(t) R
θJA
R
θJA
= 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC
(t)
500
1.0 k
2.0 k
5.0 k
10 k
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
SINGLE PULSE
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
Figure 13. Thermal Response
–200
1s
IC, COLLECTOR CURRENT (mA)
–100
–50
TA = 25°C
TJ = 25°C
3 ms
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk)
≤
150°C. TJ(pk) may be calculated from
the data in Figure 13. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.
–10
–5.0
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–5.0
–10
–30 –45 –65 –100
VCE, COLLECTOR–EMITTER VOLTAGE (V)
–2.0
–1.0
Figure 14. Active Region — Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–127
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