PD - 94294C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level R
DS(on)
IRHNJ57133SE 100K Rads (Si) 0.08Ω
IRHNJ57133SE
JANSR2N7485U3
130V, N-CHANNEL
REF: MIL-PRF-19500/704
5
TECHNOLOGY
I
D
QPL Part Number
20A JANSR2N7485U3
SMD-0.5
International Rectifier’s R5 technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
TM
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
20
12.5
80
75
0.6
±20
65
20
7.5
7.7
-55 to 150
300 (for 5s)
1.0(Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
05/14/04
IRHNJ57133SE, JANSR2N7485U3
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
130
—
—
2.5
8.0
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.16
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
—
—
0.08
4.5
—
10
25
100
-100
48
16
18
20
100
35
40
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 12.5A
Ã
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 12.5A
Ã
VDS= 104V ,VGS=0V
VDS = 104V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 20A
VDS = 65V
VDD = 65V, ID = 20A,
VGS =12V, RG = 7.5Ω
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
970
300
20
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
20
80
1.2
250
1.5
Test Conditions
A
V
nS
µC
T
j
= 25°C, IS = 20A, VGS = 0V
Ã
Tj = 25°C, IF = 20A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max
—
—
—
6.6
1.67
—
Units
°C/W
Test Conditions
soldered to a 2 square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHNJ57133SE, JANSR2N7485U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-0.5)
Diode Forward Voltage
Min
130
2.0
—
—
—
—
—
—
100K Rads (Si)
Max
—
4.5
100
-100
10
0.082
0.08
1.2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
=104V, V
GS
=0V
V
GS
= 12V, I
D
= 12.5A
V
GS
= 12V, I
D
= 12.5A
V
GS
= 0V, I
D
= 20A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
MeV/(mg/cm
2
))
36.7
59.8
82.3
Energy
(MeV)
309
341
350
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
39.5
130
130
130
130
130
32.5
130
130
130
100
50
28.4
130
120
30
—
—
150
120
VDS
90
60
30
0
0
-5
-10
VGS
-15
-20
Br
I
Au
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHNJ57133SE, JANSR2N7485U3
Pre-Irradiation
100
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
100
10
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1
1
5.0V
0.1
5.0V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.01
0.1
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
T
J
= 25
°
C
I
D
= 20A
I
D
, Drain-to-Source Current (A)
T
J
= 150
°
C
10
2.0
1.5
1.0
1
0.5
0.1
V DS =
15
50V
20µs PULSE WIDTH
5
7
9
11
13
15
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHNJ57133SE, JANSR2N7485U3
2500
V
GS
, Gate-to-Source Voltage (V)
2000
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 20A
V
DS
= 104V
V
DS
= 65V
V
DS
= 26V
16
C, Capacitance (pF)
1500
12
1000
Ciss
Coss
8
500
Crss
4
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
8
16
24
32
40
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
I
SD
, Reverse Drain Current (A)
T
J
= 150
°
C
10
ID, Drain-to-Source Current (A)
100
100µs
10
T
J
= 25
°
C
1
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
10ms
1000
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
1.4
0.1
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
www.irf.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
