PD - 91583B
IRG4PC50K
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated
UltraFast IGBT
C
Features
• High short circuit rating optimized for motor control,
t
sc
=10µs, @360V V
CE
(start), T
J
= 125°C,
V
GE
= 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.84V
@V
GE
= 15V, I
C
= 30A
n-channel
Benefits
• As a Freewheeling Diode we recommend our
HEXFRED
TM
ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBTs offer highest power
density motor controls possible
• This part replaces the IRGPC50K and IRGPC50M
devices
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
t
sc
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
52
30
104
104
10
±20
170
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
www.irf.com
1
4/15/2000
IRG4PC50K
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600
—
Emitter-to-Collector Breakdown Voltage
T
18
—
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
— 0.47
— 1.84
Collector-to-Emitter Saturation Voltage
— 2.19
V
CE(ON)
— 1.79
V
GE(th)
Gate Threshold Voltage
3.0
—
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage
—
-12
g
fe
Forward Transconductance
U
17
24
—
—
I
CES
Zero Gate Voltage Collector Current
—
—
—
—
I
GES
Gate-to-Emitter Leakage Current
—
—
V
(BR)CES
V
(BR)ECS
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 250µA
—
V
V
GE
= 0V, I
C
= 1.0A
—
V/°C V
GE
= 0V, I
C
= 1.0mA
2.2
I
C
= 30A
V
GE
= 15V
—
I
C
= 52A
See Fig.2, 5
V
—
I
C
= 30A , T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 250µA
—
S
V
CE
=
100 V, I
C
= 30A
250
V
GE
= 0V, V
CE
= 600V
µA
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
5000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
Typ.
200
25
85
38
34
160
79
0.49
0.68
1.12
—
37
35
260
170
2.34
13
3200
370
95
Max. Units
Conditions
300
I
C
= 30A
38
nC
V
CC
= 400V
See Fig.8
130
V
GE
= 15V
—
—
T
J
= 25°C
ns
240
I
C
= 30A, V
CC
= 480V
120
V
GE
= 15V, R
G
= 5.0Ω
—
Energy losses include "tail"
—
mJ
See Fig. 9,10,14
1.4
—
µs
V
CC
= 400V, T
J
= 125°C
V
GE
= 15V, R
G
= 10Ω , V
CPK
< 500V
—
T
J
= 150°C,
—
I
C
= 30A, V
CC
= 480V
ns
—
V
GE
= 15V, R
G
= 5.0Ω
—
Energy losses include "tail"
—
mJ
See Fig. 11,14
—
nH
Measured 5mm from package
—
V
GE
= 0V
—
pF
V
CC
= 30V
See Fig. 7
—
ƒ = 1.0MHz
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
S
Repetitive rating; pulse width limited by maximum
junction temperature.
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 5.0
Ω
T
Pulse width
≤
80µs; duty factor
≤
0.1%.
U
Pulse width 5.0µs, single shot.
2
www.irf.com
IRG4PC50K
70
F o r b o th :
60
T ria n g u la r wa v e :
50
D u ty cy cl e: 5 0%
TJ = 1 25 °C
T sin k = 9 0°C
G ate d rive as s p ecified
P o w e r D is s ip a tio n = 4 0 W
C la m p v o lta g e :
8 0 % o f ra te d
40
S q u a re wave :
6 0 % o f ra t e d
v o lta g e
I
30
20
10
Id e al d i o de s
0
0.1
1
10
A
100
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
1000
1000
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 25
°
C
T
J
= 150
°
C
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 150
°
C
10
10
T
J
= 25
°
C
V
CC
= 50V
5µs PULSE WIDTH
5
6
7
8
9
10
11
12
1
1
V
GE
= 15V
20µs PULSE WIDTH
10
1
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
www.irf.com
3
IRG4PC50K
60
3.0
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 60 A
Maximum DC Collector Current(A)
50
40
V
CE
, Collector-to-Emitter Voltage(V)
30
2.0
I
C
= 30 A
20
I
C
= 15 A
10
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
Thermal Response (Z
thJC
)
0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRG4PC50K
5000
4000
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
=
C
ies
=
C
res
=
C
oes
=
0V,
f = 1MHz
C
ge
+ C
gc ,
C
ce
SHORTED
C
gc
C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 30A
16
C, Capacitance (pF)
C
ies
3000
12
2000
8
1000
4
C
oes
0
1
10
C
res
100
0
0
40
80
120
160
200
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
4.0
Total Switching Losses (mJ)
3.0
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 30A
100
R
G
=
5.0
Ω
Ohm
V
GE
= 15V
V
CC
= 480V
10
I
C
=
60
A
I
C
=
30
A
I
C
=
15
A
2.0
1
1.0
0.0
0
Ω
R
G
, Gate Resistance (Ohm)
(Ω)
10
20
30
40
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
www.irf.com
5
机器人开发
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
