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BC337 / BC338 — NPN Epitaxial Silicon Transistor
September 2015
BC337 / BC338
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver Stages and Low-Power Output Stages
• Complement to BC327 / BC328
TO-92
12
1
1. Collector
2. Base
3. Emitter
3
3
2
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
BC33716BU
BC33716TA
BC33716TFR
BC33725BU
BC33725TA
BC33725TAR
BC33725TF
BC33725TFR
BC33740BU
BC33740TA
BC33825TA
Top Mark
BC33716
BC33716
BC33716
BC33725
BC33725
BC33725
BC33725
BC33725
BC33740
BC33740
BC33825
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Ammo
Tape and Reel
Bulk
Ammo
Ammo
Tape and Reel
Tape and Reel
Bulk
Ammo
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CES
V
CEO
V
EBO
I
C
T
J
T
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Junction Temperature
Storage Temperature
Parameter
BC337
BC338
BC337
BC338
Value
50
30
45
25
5
800
150
-55 to 150
Unit
V
V
V
mA
°C
°C
© 2002 Fairchild Semiconductor Corporation
BC337 / BC338 Rev. 1.5
www.fairchildsemi.com
BC337 / BC338 — NPN Epitaxial Silicon Transistor
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
Power Dissipation
Derate Above 25°C
Parameter
Value
625
5.0
200
Unit
mW
mW/°C
°C/W
Thermal Resistance, Junction-to-Ambient
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CEO
BV
CES
BV
EBO
I
CES
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
BC337
BC338
BC337
BC338
Conditions
I
C
= 10 mA, I
B
= 0
I
C
= 0.1 mA, V
BE
= 0
I
E
= 0.1 mA, I
C
= 0
Min.
45
25
50
30
5
Typ.
Max.
Unit
V
V
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
BC337 V
CE
= 45 V, I
B
= 0
BC338 V
CE
= 25 V, I
B
= 0
V
CE
= 1 V, I
C
= 100 mA
V
CE
= 1 V, I
C
= 300 mA
I
C
= 500 mA, I
B
= 50 mA
V
CE
= 1 V, I
C
= 300 mA
V
CE
= 5 V, I
C
= 10 mA,
f = 50 MHz
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
100
60
2
2
100
100
630
0.7
1.2
nA
V
V
MHz
pF
100
12
h
FE
Classification
Classification
h
FE1
h
FE2
16
100 ~ 250
60 ~
25
160 ~ 400
100 ~
40
250 ~ 630
170 ~
© 2002 Fairchild Semiconductor Corporation
BC337 / BC338 Rev. 1.5
www.fairchildsemi.com
2
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