Datasheet> 器件分类 > 存储> 存储> IS43R16800CC-6TLI

IS43R16800CC-6TLI: 产品描述DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66; 产品类别存储存储; 文件大小702KB，共37页; 制造商Integrated Silicon Solution ( ISSI ); 标准

下载文档详细参数选型对比全文预览

IS43R16800CC-6TLI在线购买

供应商	器件名称	价格	最低购买	库存
	IS43R16800CC-6TLI	-	-	点击查看	点击购买

IS43R16800CC-6TLI概述

DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66

IS43R16800CC-6TLI规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	TSOP2
包装说明	TSOP2, TSSOP66,.46
针数	66
Reach Compliance Code	compliant
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	0.7 ns
其他特性	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	166 MHz
I/O 类型	COMMON
交错的突发长度	2,4,8
JESD-30 代码	R-PDSO-G66
JESD-609代码	e3
长度	22.22 mm
内存密度	134217728 bit
内存集成电路类型	DDR DRAM
内存宽度	16
湿度敏感等级	3
功能数量	1
端口数量	1
端子数量	66
字数	8388608 words
字数代码	8000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	8MX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装等效代码	TSSOP66,.46
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）	260
电源	2.5 V
认证状态	Not Qualified
刷新周期	4096
座面最大高度	1.2 mm
自我刷新	YES
连续突发长度	2,4,8
最大待机电流	0.025 A
最大压摆率	0.25 mA
最大供电电压 (Vsup)	2.7 V
最小供电电压 (Vsup)	2.3 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Matte Tin (Sn)
端子形式	GULL WING
端子节距	0.65 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	40
宽度	10.16 mm
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

IS43R16800CC

FEATURES:

8Mx16

128Mb DDR Synchronous DRAM

• V

ddq

= 2.5V+0.2V (-5, -6, -75)

• Double data rate architecture; two data transfers

per clock cycle.

• Bidirectional , data strobe (DQS) is transmitted/

received with data

• Differential clock input (CLK and /CLK)

• DLL aligns DQ and DQS transitions with CLK

transitions edges of DQS

• Commands entered on each positive CLK edge;

• Data and data mask referenced to both edges of

DQS

• 4 bank operation controlled by BA0 , BA1

(Bank Address)

• /CAS latency -2.0 / 2.5 / 3.0 (programmable) ;

Burst length -2 / 4 / 8 (programmable)

Burst type -Sequential / Interleave (program-

mable)

• Auto precharge/ All bank precharge controlled

by A10

• 4096 refresh cycles / 64ms (4 banks concurrent

refresh)

• Auto refresh and Self refresh

• Row address A0-11 / Column address A0-8

• SSTL_2 Interface

• Package:

66-pin TSOP II

• Temperature Range:

Commercial (0

C to +70

Industrial (-40

C to +85

JUNE 2009

DESCRIPTION:

IS43R16800CC is a 4-bank x 2,097,152-word x 16bit

double data rate synchronous DRAM , with SSTL_2

interface. All control and address signals are referenced

to the rising edge of CLK. Input data is registered on

both edges of data strobe, and output data and data

strobe are referenced on both edges of CLK. The device

achieves very high speed clock rate up to 200 MHz.

KEY TIMING PARAMETERS

Parameter

-5

-6

-75

Clk Cycle Time

CAS Latency = 3

7.5

CAS Latency = 2.5

7.5

CAS Latency = 2

7.5

Clk Frequency

CAS Latency = 3

200

167

133

CAS Latency = 2.5 200

167

133

CAS Latency = 2

133

Access Time from Clock

CAS Latency = 3

+0.70 +0.70 +0.75

CAS Latency = 2.5 +0.70 +0.70 +0.75

CAS Latency = 2

+0.75 +0.75 +0.75

Unit

MHz

ADDRESS TABLE

Parameter

Configuration

Bank Address Pins

Autoprecharge Pins

Row Addresses

Column Addresses

Refresh Count

8M x 16

2M x 16 x 4 banks

BA0, BA1

A10/AP

A0 – A11

A0 – A8

4096 / 64ms

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the

latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc.

Rev. A

06/01/09

IS43R16800CC-6TLI相似产品对比

	IS43R16800CC-6TLI	IS43R16800CC-6TL	IS43R16800CC-6TL-TR	IS43R16800CC-5TL-TR	IS43R16800CC-5TLI	IS43R16800CC-5TL
描述	DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66	DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66	DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66	DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66	DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66	DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66
是否Rohs认证	符合	符合	符合	符合	符合	符合
零件包装代码	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
包装说明	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	TSOP2,	TSOP2,	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46
针数	66	66	66	66	66	66
Reach Compliance Code	compliant	compliant	unknown	unknown	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	0.7 ns	0.7 ns	0.7 ns	0.7 ns	0.7 ns	0.7 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 代码	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66
JESD-609代码	e3	e3	e3	e3	e3	e3
长度	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm
内存密度	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit
内存集成电路类型	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
内存宽度	16	16	16	16	16	16
湿度敏感等级	3	3	3	3	3	3
功能数量	1	1	1	1	1	1
端口数量	1	1	1	1	1	1
端子数量	66	66	66	66	66	66
字数	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words
字数代码	8000000	8000000	8000000	8000000	8000000	8000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	70 °C	70 °C	70 °C	85 °C	70 °C
组织	8MX16	8MX16	8MX16	8MX16	8MX16	8MX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）	260	260	260	260	260	260
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
自我刷新	YES	YES	YES	YES	YES	YES
最大供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
最小供电电压 (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL
端子面层	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	40	40	40	40	40	40
宽度	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
最大时钟频率 (fCLK)	166 MHz	166 MHz	-	-	200 MHz	200 MHz
I/O 类型	COMMON	COMMON	-	-	COMMON	COMMON
交错的突发长度	2,4,8	2,4,8	-	-	2,4,8	2,4,8
输出特性	3-STATE	3-STATE	-	-	3-STATE	3-STATE
封装等效代码	TSSOP66,.46	TSSOP66,.46	-	-	TSSOP66,.46	TSSOP66,.46
电源	2.5 V	2.5 V	-	-	2.5 V	2.5 V
刷新周期	4096	4096	-	-	4096	4096
连续突发长度	2,4,8	2,4,8	-	-	2,4,8	2,4,8
最大待机电流	0.025 A	0.025 A	-	-	0.03 A	0.03 A
最大压摆率	0.25 mA	0.25 mA	-	-	0.29 mA	0.29 mA
Base Number Matches	1	1	1	1	-	-

IS43R16800CC-6TLI

IS43R16800CC-6TLI在线购买

IS43R16800CC-6TLI概述

IS43R16800CC-6TLI规格参数

文档预览

IS43R16800CC-6TLI相似产品对比

推荐资源