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IS61VPS51236-200TQI: 产品描述Cache SRAM, 512KX36, 3.1ns, CMOS, PQFP100, TQFP-100; 产品类别存储存储; 文件大小162KB，共24页; 制造商Integrated Silicon Solution ( ISSI )

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IS61VPS51236-200TQI概述

Cache SRAM, 512KX36, 3.1ns, CMOS, PQFP100, TQFP-100

IS61VPS51236-200TQI规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	QFP
包装说明	TQFP-100
针数	100
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
最长访问时间	3.1 ns
其他特性	PIPELINED ARCHITECTURE
JESD-30 代码	R-PQFP-G100
JESD-609代码	e0
长度	20 mm
内存密度	18874368 bit
内存集成电路类型	CACHE SRAM
内存宽度	36
功能数量	1
端子数量	100
字数	524288 words
字数代码	512000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	512KX36
封装主体材料	PLASTIC/EPOXY
封装代码	LQFP
封装形状	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	240
认证状态	Not Qualified
座面最大高度	1.6 mm
最大供电电压 (Vsup)	2.625 V
最小供电电压 (Vsup)	2.375 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	0.65 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	30
宽度	20 mm
Base Number Matches	1

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IS61VPS51232

IS61VPS51236

IS61VPS10018

512K x 32, 512K x 36, 1024K x 18

SYNCHRONOUS PIPELINED,

SINGLE-CYCLE DESELECT STATIC RAM

FEATURES

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and

control

• Linear burst sequence control using MODE input

• Three chip enable option for simple depth expansion

and address pipelining

• Common data inputs and data outputs

• JEDEC 100-Pin TQFP and

119-pin PBGA package

• Single +2.5V, ±5% operation

• Auto Power-down during deselect

• Single cycle deselect

• Snooze MODE for reduced-power standby

• JTAG Boundary Scan for PBGA package

ISSI

ADVANCE INFORMATION

MAY 2001

DESCRIPTION

The

ISSI

IS61VPS51232, IS61VPS51236, and

IS61VPS10018 are high-speed, low-power synchronous

static RAMs designed to provide burstable, high-performance

memory for communication and networking applications.

The IS61VPS51232 is organized as 524,288 words by 32 bits

and the IS61VPS51236 is organized as 524,288 words by

36 bits. The IS61VPS10018 is organized as 1,048,576

words by 18 bits. Fabricated with

ISSI

's advanced CMOS

technology, the device integrates a 2-bit burst counter,

high-speed SRAM core, and high-drive capability outputs

into a single monolithic circuit. All synchronous inputs

pass through registers controlled by a positive-edge-

triggered single clock input.

Write cycles are internally self-timed and are initiated by

the rising edge of the clock input. Write cycles can be one

to four bytes wide as controlled by the write control inputs.

Separate byte enables allow individual bytes to be written.

Byte write operation is performed by using byte write

enable (BWE).input combined with one or more individual

byte write signals (BWx). In addition, Global Write (GW)

is available for writing all bytes at one time, regardless of

the byte write controls.

Bursts can be initiated with either

ADSP

(Address Status

Processor) or

ADSC

(Address Status Cache Controller)

input pins. Subsequent burst addresses can be generated

internally and controlled by the

ADV

(burst address

advance) input pin.

The mode pin is used to select the burst sequence order,

Linear burst is achieved when this pin is tied LOW.

Interleave burst is achieved when this pin is tied HIGH or

left floating.

FAST ACCESS TIME

Symbol

Parameter

Clock Access Time

Cycle Time

Frequency

-200

3.1

200

-166

3.5

166

Units

MHz

This document contains ADVANCE INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best

Integrated Silicon Solution, Inc. — 1-800-379-4774

ADVANCE INFORMATION

05/31/01

Rev. 00A

IS61VPS51236-200TQI相似产品对比

	IS61VPS51236-200TQI	IS61VPS51236-200TQ	IS61VPS51232-166TQ	IS61VPS10018-166B	IS61VPS10018-200B	IS61VPS10018-200TQI	IS61VPS10018-200TQ	IS61VPS51232-200TQ
描述	Cache SRAM, 512KX36, 3.1ns, CMOS, PQFP100, TQFP-100	Cache SRAM, 512KX36, 3.1ns, CMOS, PQFP100, TQFP-100	Cache SRAM, 512KX32, 3.5ns, CMOS, PQFP100, TQFP-100	Cache SRAM, 1MX18, 3.5ns, CMOS, PBGA119, PLASTIC, BGA-119	Cache SRAM, 1MX18, 3.1ns, CMOS, PBGA119, PLASTIC, BGA-119	Cache SRAM, 1MX18, 3.1ns, CMOS, PQFP100, TQFP-100	Cache SRAM, 1MX18, 3.1ns, CMOS, PQFP100, TQFP-100	Cache SRAM, 512KX32, 3.1ns, CMOS, PQFP100, TQFP-100
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
零件包装代码	QFP	QFP	QFP	BGA	BGA	QFP	QFP	QFP
包装说明	TQFP-100	TQFP-100	TQFP-100	PLASTIC, BGA-119	PLASTIC, BGA-119	TQFP-100	TQFP-100	TQFP-100
针数	100	100	100	119	119	100	100	100
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	3.1 ns	3.1 ns	3.5 ns	3.5 ns	3.1 ns	3.1 ns	3.1 ns	3.1 ns
JESD-30 代码	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PBGA-B119	R-PBGA-B119	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0
长度	20 mm	20 mm	20 mm	22 mm	22 mm	20 mm	20 mm	20 mm
内存密度	18874368 bit	18874368 bit	16777216 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	16777216 bit
内存集成电路类型	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
内存宽度	36	36	32	18	18	18	18	32
功能数量	1	1	1	1	1	1	1	1
端子数量	100	100	100	119	119	100	100	100
字数	524288 words	524288 words	524288 words	1048576 words	1048576 words	1048576 words	1048576 words	524288 words
字数代码	512000	512000	512000	1000000	1000000	1000000	1000000	512000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	70 °C	70 °C	70 °C	70 °C	85 °C	70 °C	70 °C
组织	512KX36	512KX36	512KX32	1MX18	1MX18	1MX18	1MX18	512KX32
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LQFP	LQFP	LQFP	BGA	BGA	LQFP	LQFP	LQFP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	GRID ARRAY	GRID ARRAY	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	240	240	240	240	240	240	240	240
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.6 mm	1.6 mm	1.6 mm	2.41 mm	2.41 mm	1.6 mm	1.6 mm	1.6 mm
最大供电电压 (Vsup)	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V
最小供电电压 (Vsup)	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	GULL WING	GULL WING	BALL	BALL	GULL WING	GULL WING	GULL WING
端子节距	0.65 mm	0.65 mm	0.65 mm	1.27 mm	1.27 mm	0.65 mm	0.65 mm	0.65 mm
端子位置	QUAD	QUAD	QUAD	BOTTOM	BOTTOM	QUAD	QUAD	QUAD
处于峰值回流温度下的最长时间	30	30	30	30	30	30	30	30
宽度	20 mm	20 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm

IS61VPS51236-200TQI

IS61VPS51236-200TQI概述

IS61VPS51236-200TQI规格参数

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IS61VPS51236-200TQI相似产品对比

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