Datasheet> 器件分类 > 分立半导体> 晶体管> IRGS15B60KDTRRPBF

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IRGS15B60KDTRRPBF: 产品描述Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3; 产品类别分立半导体晶体管; 文件大小824KB，共16页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/; 标准

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IRGS15B60KDTRRPBF概述

Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3

IRGS15B60KDTRRPBF规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	International Rectifier （ Infineon ）
零件包装代码	D2PAK
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	3
Reach Compliance Code	compliant
其他特性	ULTRA FAST
外壳连接	COLLECTOR
最大集电极电流 (IC)	31 A
集电极-发射极最大电压	600 V
配置	SINGLE WITH BUILT-IN DIODE
JESD-30 代码	R-PSSO-G2
JESD-609代码	e3
湿度敏感等级	1
元件数量	1
端子数量	2
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子面层	MATTE TIN OVER NICKEL
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	30
晶体管应用	MOTOR CONTROL
晶体管元件材料	SILICON
标称断开时间 (toff)	231 ns
标称接通时间 (ton)	52 ns
Base Number Matches	1

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PD - 95194A

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

• Low VCE (on) Non Punch Through IGBT

Technology.

• Low Diode VF.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Ultrasoft Diode Reverse Recovery Characteristics.

• Positive VCE (on) Temperature Coefficient.

• Lead-Free

IRGB15B60KDPbF

IRGS15B60KDPbF

IRGSL15B60KDPbF

CES

= 600V

= 15A, T

=100°C

> 10µs, T

=150°C

n-channel

CE(on)

typ. = 1.8V

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

TO-220AB

Pak

IRGS15B60KDPbF

Absolute Maximum Ratings

Parameter

CES

@ T

= 25°C

@ T

= 100°C

@ T

= 25°C

@ T

= 100°C

@ T

= 25°C

@ T

= 100°C

STG

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

IRGB15B60KDPbF

TO-262

IRGSL15B60KDPbF

Max.

600

± 20

208

-55 to +150

300 (0.063 in. (1.6mm) from case)

Units

°C

Thermal Resistance

Parameter

θJC

θCS

θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Junction-to-Ambient (PCB Mount, steady state)

Weight

Min.

–––

Typ.

–––

0.50

–––

1.44

Max.

0.6

2.1

–––

Units

°C/W

www.irf.com

10/03/05

IRGS15B60KDTRRPBF相似产品对比

	IRGS15B60KDTRRPBF	IRGB15B60KD	IRGS15B60KD	IRGS15B60KDTRL	IRGS15B60KDTRLPBF
描述	Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE	Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3	Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3
是否Rohs认证	符合	不符合	不符合	不符合	符合
厂商名称	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
零件包装代码	D2PAK	TO-220AB	D2PAK	D2PAK	D2PAK
包装说明	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
针数	3	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
其他特性	ULTRA FAST	ULTRA FAST	ULTRA FAST	ULTRA FAST	ULTRA FAST
外壳连接	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	31 A	31 A	31 A	31 A	31 A
集电极-发射极最大电压	600 V	600 V	600 V	600 V	600 V
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
JESD-30 代码	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609代码	e3	e0	e0	e0	e3
元件数量	1	1	1	1	1
端子数量	2	3	2	2	2
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	260	225	225	225	260
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	NO	YES	YES	YES
端子面层	MATTE TIN OVER NICKEL	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	MATTE TIN OVER NICKEL
端子形式	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	30	30	30	30	30
晶体管应用	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
标称断开时间 (toff)	231 ns	231 ns	231 ns	231 ns	231 ns
标称接通时间 (ton)	52 ns	52 ns	52 ns	52 ns	52 ns
Base Number Matches	1	1	1	1	1
湿度敏感等级	1	-	1	1	1
最大降落时间（tf）	-	36 ns	36 ns	36 ns	-
门极发射器阈值电压最大值	-	5.5 V	5.5 V	5.5 V	-
门极-发射极最大电压	-	20 V	20 V	20 V	-
最大功率耗散 (Abs)	-	208 W	208 W	208 W	-
最大上升时间（tr）	-	25 ns	25 ns	25 ns	-

IRGS15B60KDTRRPBF

IRGS15B60KDTRRPBF概述

IRGS15B60KDTRRPBF规格参数

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