PD -9.1218
IRL620S
HEXFET
®
Power MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
DS(on)
Specified at V
GS
=4V & 5V
Fast Switching
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The SMD-220 is a surface-mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The SMD-220 is suitable for
high current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface-mount application.
V
DSS
= 200V
R
DS(on)
= 0.80
Ω
I
D
= 5.2A
SMD-220
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 5.0 V
Continuous Drain Current, V
GS
@ 5.0 V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
5.2
3.3
21
50
3.1
0.40
0.025
±10
125
5.2
5.0
5.0
-55 to + 150
300 (1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Thermal Resistance
Parameter
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
Min.
—
—
—
Typ.
—
—
—
Max.
2.5
40
62
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques, refer
to Application Note AN-994.
Revision 0
IRL620S
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
V
(BR)DSS
∆
V
(BR)DSS
/
∆
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units Conditions
200
—
—
V
V
GS
= 0V, ID = 250µA
— 0.27 —
V/°C Reference to 25°C, I
D
= 1mA
—
— 0.80
V
GS
= 10.0V, I
D
= 3.1A
Ω
—
—
1.0
V
GS
= 4.0V, I
D
= 2.6A
1.0
—
2.0
V
V
DS
= V
GS
, I
D
= 250µA
1.2
—
—
S
V
DS
= 50V, I
D
= 3.1A
—
—
25
V
DS
= 200V, V
GS
= 0V
µA
—
— 250
V
DS
= 320V, V
GS
= 0V, T
J
= 125°C
—
— 100
V
GS
= 10V
nA
—
— -100
V
GS
= -10V
—
—
16
I
D
= 5.2A
—
—
2.9
nC V
DS
= 160V
—
—
9.6
V
GS
= 5.0V, See Fig. 6 and 13
—
4.2
—
V
DD
= 100V
—
31
—
I
D
= 5.2A
ns
—
18
—
R
G
= 9.0Ω
—
17
—
R
D
= 20Ω, See Fig. 10
—
4.5
—
Between lead,
6mm (0.25in.)
nH
—
7.5
—
from package
and center of
die contact
— 360
—
V
GS
= 0V
—
91
—
pF
V
DS
= 25V
—
27
—
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units Conditions
MOSFET symbol
—
—
5.2
showing the
A
integral reverse
—
—
21
p-n junction diode.
—
—
1.8
V
T
J
= 25°C, I
S
= 5.2A, V
GS
= 0V
— 180 270
ns
T
J
= 25°C, I
F
= 5.2A
—
1.1 1.7
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
5.2A, di/dt
≤
95A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
V
DD
= 50V, starting T
J
= 25°C, L = 6.9mH
R
G
= 25Ω, I
AS
= 5.2A. (See Figure 12)
IRL620S
I
D
, Drain Current (Amps)
Fig 1.
Typical Output Characteristics,
T
C
= 25
o
C
I
D
, Drain Current (Amps)
Fig 2.
Typical Output Characteristics,
T
C
= 150
o
C
Fig 3.
Typical Transfer Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain Current (Amps)
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRL620s
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
V
GS
, Gate-to-Source Voltage (volts)
Capacitance (pF)
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
I
SD
, Reverse Drain Current (Amps)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
I
D
, Drain Current (Amps)
Fig 8.
Maximum Safe Operating Area
IRL620S
I
D
, Drain Current (Amps)
Fig 10a.
Switching Time Test Circuit
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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