TM
HFA1113/883
Output Limiting, Ultra High Speed
Programmable Gain, Buffer Amplifier
Description
The HFA1113/883 is a closed loop buffer featuring a high
degree of gain accuracy, wide bandwidth, low distortion, and
programmable output limiting. This buffer is the ideal choice
for high frequency applications requiring output limiting,
especially those needing ultra fast overdrive recovery times.
The output limiting function allows the designer to set the
maximum positive and negative output levels, thereby pro-
tecting later stages from damage or input saturation. The
sub-nanosecond overdrive recovery time quickly returns the
amplifier to linear operation following an overdrive condition.
Component and composite video systems will also benefit
from this buffer’s performance, as indicated by the excellent
gain flatness, and 0.02%/0.04 Deg. Differential Gain/Phase
specifications (R
L
= 150Ω).
A unique feature of the pinout allows the user to select a
voltage gain of +1, -1, or +2, without the use of any external
components, as described in the “Design Information” sec-
tion. Compatibility with existing op amp pinouts provides
flexibility to upgrade low gain amplifiers, while decreasing
component count. Unlike most buffers, the standard pinout
provides an upgrade path should a higher closed loop gain
be needed at a future date.
This amplifier is available without output limiting as the
HFA1112/883. For applications requiring a standard buffer
pinout, please refer to the HFA1110/883 datasheet.
July 1994
Features
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• User Programmable Output Voltage Limiting
• User Programmable For Closed-Loop Gains of +1, -1
or +2 Without Use of External Resistors
• Low Differential Gain and Phase . . . . .0.02%/0.04 Deg.
• Low Distortion (HD3, 30MHz) . . . . . . . . . . -73dBc (Typ)
• Wide -3dB Bandwidth . . . . . . . . . . . . . . . 850MHz (Typ)
• Very High Slew Rate . . . . . . . . . . . . . . . 2400V/µs (Typ)
• Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . 13ns (Typ)
• Excellent Gain Flatness (to 100MHz) . . . . 0.07dB (Typ)
• Excellent Gain Accuracy . . . . . . . . . . . . . . 0.99V/V (Typ)
• High Output Current . . . . . . . . . . . . . . . . . . 60mA (Typ)
• Fast Overdrive Recovery . . . . . . . . . . . . . . . <1ns (Typ)
Applications
• Video Switching and Routing
• Pulse and Video Amplifiers
• Wideband Amplifiers
• RF/IF Signal Processing
• Flash A/D Driver
• Medical Imaging Systems
Ordering Information
PART NUMBER
HFA1113MJ/883
HFA1113ML/883
TEMPERATURE
RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
PACKAGE
8 Lead CerDIP
20 Lead Ceramic LCC
Pinouts
HFA1113/883
(CERDIP)
TOP VIEW
NC
-IN
+IN
V-
1
300
2
3
4
+
300
8
7
6
5
V
H
V+
OUT
V
L
NC 4
-IN 5
NC 6
+IN 7
NC 8
9 10 11 12 13
NC
V-
NC
NC
V
L
300
+
HFA1113/883
(CLCC)
TOP VIEW
NC
NC
NC
NC
NC
18 V
H
17 V+
16 NC
15 OUT
14 NC
3
2
1 20 19
300
-
-
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
Spec Number
189
511106-883
FN3618.1
Specifications HFA1113/883
Absolute Maximum Ratings
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Voltage at V
H
or V
L
Terminal . . . . . . . . . . . . . (V+) + 2V to (V-) - 2V
Output Current (50% Duty Cycle)
. . . . . . . . . . . . . . . . . . . . . . . . ±55mA
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . < 2000V
Storage Temperature Range . . . . . . . . . . . . . . -65
o
C
≤
T
A
≤
+150
o
C
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300
o
C
Thermal Information
θ
JC
Thermal Resistance
θ
JA
o
C/W
CerDIP Package . . . . . . . . . . . . . . . . . 115
30
o
C/W
o
Ceramic LCC Package . . . . . . . . . . . . 75 C/W
23
o
C/W
Maximum Package Power Dissipation at +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.87W
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W
Package Power Dissipation Derating Factor above +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/
o
C
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Supply Voltage (±V
S
)
. . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V
Operating Temperature Range. . . . . . . . . . . . .-55
o
C
≤
T
A
≤
+125
o
C
R
L
Š≥ 50Ω
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±5V,
R
SOURCE
= 0Ω, R
L
= 100Ω, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
Power Supply
Rejection Ratio
PSRRP
∆V
SUPPLY
=
±1.25V,
V+ = 6.25V, V- = -5V,
V+ = 3.75V, V- = -5V
∆V
SUPPLY
=
±1.25V,
V+ = 5V, V- = -6.25V,
V+ = 5V, V- = -3.75V
V
CM
= 0V
∆V
CM
=
±2V,
V+ = 3V, V- = -7V,
V+ = 7V, V- = -3V
Note 1
1
2, 3
1
2, 3
1
2, 3
CMS
IBP
1
2, 3
1
2, 3
Gain (V
OUT
= 2V
P-P
)
Gain (V
OUT
= 2V
P-P
)
Gain (V
OUT
= 4V
P-P
)
Output Voltage
Swing
A
VP1
A
VM1
A
VP2
V
OP100
A
V
= +1,
V
IN
= -1V to +1V
A
V
= -1,
V
IN
= -1V to +1V
A
V
= +2,
V
IN
= -1V to +1V
A
V
= -1
R
L
= 100Ω
A
V
= -1
R
L
= 100Ω
A
V
= -1
R
L
= 50Ω
A
V
= -1
R
L
= 50Ω
V
IN
= -3.2V
V
IN
= -
2.7V
V
IN
= +3.2V
V
IN
= +2.7V
V
IN
= -2.7V
V
IN
= -
2.25V
V
IN
= +2.7V
V
IN
=+2.25V
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1, 2
3
1, 2
3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125 C, -55 C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25 C
+125
o
C,
o
o
o
PARAMETERS
Output Offset Voltage
SYMBOL
V
OS
CONDITIONS
V
CM
= 0V
MIN
-25
-40
39
35
39
35
-40
-65
-
-
25
20
0.980
0.975
0.980
0.975
1.960
1.950
3
2.5
-
-
2.5
1.5
-
-
MAX
25
40
-
-
-
-
40
65
40
50
-
-
1.020
1.025
1.020
1.025
2.040
2.050
-
-
-3
-2.5
-
-
-2.5
-1.5
UNITS
mV
mV
dB
dB
dB
dB
µA
µA
µA/V
µA/V
kΩ
kΩ
V/V
V/V
V/V
V/V
V/V
V/V
V
V
V
V
V
V
V
V
PSRRN
Non-Inverting Input (+IN)
Current
+IN Common
Mode Rejection
+IN Resistance
I
BSP
+R
IN
-55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C,
-55
o
C
V
ON100
Output Voltage
Swing
V
OP50
+25
o
C
+125
o
C, -55
o
C
+25 C, +125 C
-55
o
C
+25
o
C, +125
o
C
-55
o
C
o
o
V
ON50
Spec Number
190
511106-883
Specifications HFA1113/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
Device Tested at: V
SUPPLY
=
±5V,
R
SOURCE
= 0Ω, R
L
= 100Ω, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1, 2
3
-I
OUT
Quiescent Power
Supply Current
I
CC
I
EE
Limiting Accuracy
V
H
CLMP
V
L
CLMP
V
H
or V
L
Input Current
V
H
BIAS
V
L
BIAS
NOTES:
1. Guaranteed from +IN Common Mode Rejection Test, by: +R
IN
= 1/CMS
IBP
.
2. Guaranteed from V
OUT
Test with R
L
= 50Ω, by: I
OUT
= V
OUT
/50Ω.
Note 2
1, 2
3
R
L
= 100Ω
R
L
= 100Ω
A
V
= -1, V
IN
= -1.6V,
V
H
= 1V
A
V
= -1, V
IN
= +1.6V,
V
L
= -1V
V
H
= 1V
V
L
= -1V
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
LIMITS
TEMPERATURE
+25
o
C, +125
o
C
-55 C
+25 C, +125 C
-55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C,
o
o
o
PARAMETERS
Output Current
SYMBOL
+I
OUT
CONDITIONS
Note 2
MIN
50
30
-
-
14
-
-26
-33
-150
-200
-150
-200
-
-
-200
-300
MAX
-
-
-50
-30
26
33
-14
-
150
200
150
200
200
300
-
-
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mV
mV
mV
mV
µA
µA
µA
µA
-55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
±5V,
R
L
= 100Ω, Unless Otherwise Specified.
LIMITS
PARAMETERS
-3dB Bandwidth
SYMBOL
BW(-1)
BW(+1)
BW(+2)
Gain Flatness
GF30
GF50
GF100
Slew Rate
+SR(-1)
-SR(-1)
+SR(+1)
-SR(+1)
+SR(+2)
-SR(+2)
CONDITIONS
A
V
= -1, V
OUT
=
200mV
P-P
A
V
= +1, V
OUT
=
200mV
P-P
A
V
= +2, V
OUT
=
200mV
P-P
A
V
= +2, f
≤
30MHz,
V
OUT
=
200mV
P-P
A
V
= +2, f
≤
50MHz,
V
OUT
=
200mV
P-P
A
V
= +2, f
≤
100MHz,
V
OUT
=
200mV
P-P
A
V
= -1, V
OUT
=
5V
P-P
A
V
= -1, V
OUT
=
5V
P-P
A
V
= +1, V
OUT
=
5V
P-P
A
V
= +1, V
OUT
=
5V
P-P
A
V
= +2, V
OUT
=
5V
P-P
A
V
= +2, V
OUT
=
5V
P-P
NOTES
1
1
1
1
1
1
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
450
500
350
-
-
-
1500
1800
900
800
1200
1100
MAX
-
-
-
±0.04
±0.08
±0.22
-
-
-
-
-
-
UNITS
MHz
MHz
MHz
dB
dB
dB
V/µs
V/µs
V/µs
V/µs
V/µs
V/µs
Spec Number
191
511106-883
Specifications HFA1113/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
Device Characterized at: V
SUPPLY
=
±5V,
R
L
= 100Ω, Unless Otherwise Specified.
LIMITS
PARAMETERS
Rise and Fall Time
SYMBOL
T
R
(-1)
T
F
(-1)
T
R
(+1)
T
F
(+1)
T
R
(+2)
T
F
(+2)
Overshoot
+OS(-1)
-OS(-1)
+OS(+1)
-OS(+1)
+OS(+2)
-OS(+2)
Settling Time
TS(0.1)
TS(0.05)
2nd Harmonic Distortion
HD2(30)
HD2(50)
HD2(100)
3rd Harmonic Distortion
HD3(30)
HD3(50)
HD3(100)
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot-to-lot and within lot variation.
2. Measured between 10% and 90% points.
3. For 200ps input transition times. Overshoot decreases as input transition times increase, especially for A
V
= +1. Please refer to
Performance Curves.
CONDITIONS
A
V
= -1, V
OUT
=
0.5V
P-P
A
V
= -1, V
OUT
=
0.5V
P-P
A
V
= +1, V
OUT
=
0.5V
P-P
A
V
= +1, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= -1, V
OUT
=
0.5V
P-P
A
V
= -1, V
OUT
=
0.5V
P-P
A
V
= +1, V
OUT
=
0.5V
P-P
A
V
= +1, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= +2, to 0.1%, V
OUT
=
2V to
0V
A
V
= +2, to 0.05%,
V
OUT
=
2V to 0V
A
V
= +2, f = 30MHz,
V
OUT
=
2V
P-P
A
V
= +2, f = 50MHz,
V
OUT
=
2V
P-P
A
V
= +2, f = 100MHz,
V
OUT
=
2V
P-P
A
V
= +2, f = 30MHz,
V
OUT
=
2V
P-P
A
V
= +2, f = 50MHz,
V
OUT
=
2V
P-P
A
V
= +2, f = 100MHz,
V
OUT
=
2V
P-P
NOTES
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 3
1, 3
1, 3
1, 3
1, 3
1, 3
1
1
1
1
1
1
1
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
750
800
750
750
1000
1000
30
25
65
60
20
20
20
33
-45
-40
-35
-65
-55
-45
UNITS
ps
ps
ps
ps
ps
ps
%
%
%
%
%
%
ns
ns
dBc
dBc
dBc
dBc
dBc
dBc
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
SUBGROUPS (SEE TABLE 1)
1
1 (Note 1), 2, 3
1, 2, 3
1
Spec Number
192
511106-883
HFA1113/883
Die Characteristics
DIE DIMENSIONS:
63 x 44 x 19 mils
±
1 mils
1600 x 1130 x 483µm
±
25.4µm
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8k
Å
±
0.4k
Å
GLASSIVATION:
Type: Nitride
Thickness: 4k
Å
±
0.5k
Å
WORST CASE CURRENT DENSITY:
2.0 x 10
5
A/cm
2
at 47.5mA
TRANSISTOR COUNT:
52
SUBSTRATE POTENTIAL (Powered Up):
Floating (Recommend Connection to V-)
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16k
Å
±
0.8k
Å
Metallization Mask Layout
HFA1113/883
NC
+IN
V-
V
L
-IN
NC
V
H
V+
OUT
Spec Number
193
511106-883
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