TM
HFA1112/883
Ultra High Speed
Programmable Gain Buffer Amplifier
Description
The HFA1112/883 is a closed loop buffer that achieves a
high degree of gain accuracy, wide bandwidth, and low dis-
tortion. Manufactured on the Intersil proprietary complemen-
tary bipolar UHF-1 process, the HFA1112/883 also offers
very fast slew rates, and high output current.
A unique feature of the pinout allows the user to select a
voltage gain of +1, -1, or +2, without the use of any external
components. The result is a more flexible product, fewer part
types in inventory, and more efficient use of board space.
Component and composite video systems will also benefit
from this buffer’s performance, as indicated by the excellent
gain flatness, and 0.02%/0.04 Deg. Differential Gain/Phase
specifications (R
L
= 150Ω).
Compatibility with existing op amp pinouts provides flexibility
to upgrade low gain amplifiers, while decreasing component
count. Unlike most buffers, the standard pinout provides an
upgrade path should a higher closed loop gain be needed at
a future date.
This amplifier is available with programmable output clamps
as the HFA1113/883. For applications requiring a standard
buffer pinout, please refer to the HFA1110/883 datasheet.
June 1994
Features
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• User Programmable For Closed-Loop Gains of +1, -1
or +2 Without Use of External Resistors
• Low Differential Gain and Phase . . . . .0.02%/0.04 Deg.
• Low Distortion (HD3, 30MHz) . . . . . . . . . . -73dBc (Typ)
• Wide -3dB Bandwidth . . . . . . . . . . . . . . . 850MHz (Typ)
• Very High Slew Rate . . . . . . . . . . . . . . . 2400V/µs (Typ)
• Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . 13ns (Typ)
• Excellent Gain Flatness (to 100MHz) . . . . 0.07dB (Typ)
• Excellent Gain Accuracy . . . . . . . . . . . . . . 0.99V/V (Typ)
• High Output Current . . . . . . . . . . . . . . . . . . 60mA (Typ)
• Fast Overdrive Recovery . . . . . . . . . . . . . . <10ns (Typ)
Applications
• Video Switching and Routing
• Pulse and Video Amplifiers
• Wideband Amplifiers
• RF/IF Signal Processing
• Flash A/D Driver
• Medical Imaging Systems
Ordering Information
PART NUMBER
HFA1112MJ/883
TEMPERATURE
RANGE
-55
o
C to +125
o
C
PACKAGE
8 Lead Ceramic DIP
Pinout
HFA1112/883
(CERDIP)
TOP VIEW
300
300
+IN
V-
3
4
+
-
-IN
2
7
6
5
V+
OUT
NC
NC
1
8
NC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
Spec Number
184
511084-883
FN3610.1
Specifications HFA1112/883
Absolute Maximum Ratings
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Output Current (50% Duty Cycle)
. . . . . . . . . . . . . . . . . . . . . . . . ±55mA
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Storage Temperature Range . . . . . . . . . . . . . . -65
o
C
≤
T
A
≤
+150
o
C
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300
o
C
Thermal Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
CerDIP Package . . . . . . . . . . . . . . . . . 115
30
o
C/W
o
Maximum Package Power Dissipation at +75 C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.87W
Package Power Dissipation Derating Factor above +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Supply Voltage (±V
S
)
. . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V
Operating Temperature Range. . . . . . . . . . . . .-55
o
C
≤
T
A
≤
+125
o
C
R
L
Š≥ 50Ω
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at V
SUPPLY
=
±5V,
R
SOURCE
= 0Ω, R
L
= 100Ω, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
Power Supply
Rejection Ratio
PSRRP
∆V
SUP
=
±1.25V
V+ = 6.25V, V- = -5V
V+ = 3.75V, V- = -5V
∆V
SUP
=
±1.25V
V+ = 5V, V- = -6.25V
V+ = 5V, V- = -3.75V
V
CM
= 0V
∆V
CM
=
±2V
V+ = 3V, V- = -7V
V+ = 7V, V- = -3V
Note 1
1
2, 3
1
2, 3
1
2, 3
CMS
IBP
1
2, 3
1
2, 3
Gain
(V
OUT
= 2V
P-P
)
Gain
(V
OUT
= 2V
P-P
)
Gain
(V
OUT
= 4V
P-P
)
Output Voltage
Swing
A
VP1
A
VM1
A
VP2
V
OP100
V
ON100
Output Voltage
Swing
V
OP50
V
ON50
A
V
= +1
V
IN
= -1V to +1V
A
V
= -1
V
IN
= -1V to +1V
A
V
= +2
V
IN
= -1V to +1V
A
V
= -1
R
L
= 100Ω
A
V
= -1
R
L
= 100Ω
A
V
= -1
R
L
= 50Ω
A
V
= -1
R
L
= 50Ω
V
IN
= -3.2V
V
IN
= -2.7V
V
IN
= +3.2V
V
IN
= +2.7V
V
IN
= -2.7V
V
IN
= -2.25V
V
IN
= +2.7V
V
IN
= +2.25V
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1, 2
3
1, 2
3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C,
D.C. PARAMETERS
Output Offset Voltage
SYMBOL
V
OS
CONDITIONS
V
CM
= 0V
MIN
-25
-40
39
35
39
35
-40
-65
-
-
25
20
0.980
MAX
25
40
-
-
-
-
40
65
40
50
-
-
1.020
1.025
1.020
1.025
2.040
2.050
-
-
-3
-2.5
-
-
-2.5
-1.5
UNITS
mV
mV
dB
dB
dB
dB
µA
µA
µA/V
µA/V
kΩ
kΩ
V/V
V/V
V/V
V/V
V/V
V/V
V
V
V
V
V
V
V
V
-55
o
C
PSRRN
+25
o
C
+125
o
C,
-55
o
C
Non-Inverting Input
(+IN) Current
+IN Common
Mode Rejection
+IN Resistance
I
BSP
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
o
C
o
+R
IN
+125 C, -55 C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125 C, -55 C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C
-55
o
C
+25
o
C, +125
o
C
-55
o
C
o
o
0.975
0.980
0.975
1.960
1.950
3
2.5
-
-
2.5
1.5
-
-
Spec Number
185
511084-883
Specifications HFA1112/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at V
SUPPLY
=
±5V,
R
SOURCE
= 0Ω, R
L
= 100Ω, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1, 2
3
-I
OUT
Quiescent Power
Supply Current
I
CC
I
EE
NOTES:
1. Guaranteed from +IN Common Mode Rejection Test, by: +R
IN
= 1/CMS
IBP
.
2. Guaranteed from V
OUT
Test with R
L
= 50Ω, by: I
OUT
= V
OUT
/50Ω.
Note 2
1, 2
3
R
L
= 100Ω
R
L
= 100Ω
1
2, 3
1
2, 3
LIMITS
TEMPERATURE
+25
o
C, +125
o
C
-55 C
+25 C, +125 C
-55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
o
o
o
D.C. PARAMETERS
Output Current
SYMBOL
+I
OUT
Note 2
CONDITIONS
MIN
50
30
-
-
14
-
-26
-33
MAX
-
-
-50
-30
26
33
-14
-
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at V
SUPPLY
=
±5V,
R
L
= 100Ω, Unless Otherwise Specified.
LIMITS
PARAMETERS
-3dB Bandwidth
SYMBOL
BW(-1)
BW(+1)
BW(+2)
Gain Flatness
GF30
GF50
GF100
Slew Rate
+SR(-1)
-SR(-1)
+SR(+1)
-SR(+1)
+SR(+2)
-SR(+2)
Rise and Fall Time
T
R
(-1)
T
F
(-1)
T
R
(+1)
T
F
(+1)
T
R
(+2)
T
F
(+2)
CONDITIONS
A
V
= -1, V
OUT
=
200mV
P-P
A
V
= +1, V
OUT
=
200mV
P-P
A
V
= +2, V
OUT
=
200mV
P-P
A
V
= +2, f
≤
30MHz
V
OUT
=
200mV
P-P
A
V
= +2, f
≤
50MHz
V
OUT
=
200mV
P-P
A
V
= +2, f
≤
100MHz
V
OUT
=
200mV
P-P
A
V
= -1, V
OUT
=
5V
P-P
A
V
= -1, V
OUT
=
5V
P-P
A
V
= +1, V
OUT
=
5V
P-P
A
V
= +1, V
OUT
=
5V
P-P
A
V
= +2, V
OUT
=
5V
P-P
A
V
= +2, V
OUT
=
5V
P-P
A
V
= -1, V
OUT
=
0.5V
P-P
A
V
= -1, V
OUT
=
0.5V
P-P
A
V
= +1, V
OUT
=
0.5V
P-P
A
V
= +1, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
NOTES
1
1
1
1
1
1
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
TEMPERATURE
+25
o
C
+25 C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
o
MIN
450
500
350
-
-
-
1500
1800
900
800
1200
1100
-
-
-
-
-
-
MAX
-
-
-
±0.04
±0.08
±0.22
-
-
-
-
-
-
750
800
750
750
1000
1000
UNITS
MHz
MHz
MHz
dB
dB
dB
V/µs
V/µs
V/µs
V/µs
V/µs
V/µs
ps
ps
ps
ps
ps
ps
Spec Number
186
511084-883
Specifications HFA1112/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Characterized at V
SUPPLY
=
±5V,
R
L
= 100Ω, Unless Otherwise Specified.
LIMITS
PARAMETERS
Overshoot
SYMBOL
+OS(-1)
-OS(-1)
+OS(+1)
-OS(+1)
+OS(+2)
-OS(+2)
Settling Time
TS(0.1)
TS(0.05)
2nd Harmonic
Distortion
HD2(30)
HD2(50)
HD2(100)
3rd Harmonic
Distortion
HD3(30)
HD3(50)
HD3(100)
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These pa-
rameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by character-
ization based upon data from multiple production runs which reflect lot-to-lot and within lot variation.
2. Measured between 10% and 90% points.
3. For 200ps input transition times. Overshoot decreases as input transition times increase, especially for A
V
= +1. Please refer to
Performance curves.
CONDITIONS
A
V
= -1, V
OUT
=
0.5V
P-P
A
V
= -1, V
OUT
=
0.5V
P-P
A
V
= +1, V
OUT
=
0.5V
P-P
A
V
= +1, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= +2, to 0.1%
V
OUT
=
2V to 0V
A
V
= +2, to 0.05%
V
OUT
=
2V to 0V
A
V
= +2, f = 30MHz
V
OUT
=
2V
P-P
A
V
= +2, f = 50MHz
V
OUT
=
2V
P-P
A
V
= +2, f = 100MHz
V
OUT
=
2V
P-P
A
V
= +2, f = 30MHz
V
OUT
=
2V
P-P
A
V
= +2, f = 50MHz
V
OUT
=
2V
P-P
A
V
= +2, f = 100MHz
V
OUT
=
2V
P-P
NOTES
1, 3
1, 3
1, 3
1, 3
1, 3
1, 3
1
1
1
1
1
1
1
1
TEMPERATURE
+25
o
C
+25 C
+25 C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
o
o
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
30
25
65
60
20
20
20
33
-45
-40
-35
-65
-55
-45
UNITS
%
%
%
%
%
%
ns
ns
dBc
dBc
dBc
dBc
dBc
dBc
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
SUBGROUPS (SEE TABLE 1)
1
1 (Note 1), 2, 3
1, 2, 3
1
Spec Number
187
511084-883
HFA1112/883
Die Characteristics
DIE DIMENSIONS:
63 x 44 x 19 mils
±
1 mils
1600µm x 1130µm x 483µm
±
25.4µm
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8k
Å
±
0.4k
Å
GLASSIVATION:
Type: Nitride
Thickness: 4k
Å
±
0.5k
Å
WORST CASE CURRENT DENSITY:
2.0 x 10
5
A/cm
2
at 47.5mA
TRANSISTOR COUNT:
52
SUBSTRATE POTENTIAL (Powered Up):
Floating (Recommend Connection to V-)
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16k
Å
±
0.8k
Å
Metallization Mask Layout
HFA1112/883
NC
+IN
V-
NC
-IN
NC
NC
V+
OUT
Spec Number
188
511084-883
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