TM
HFA1100/883
850MHz Current Feedback Amplifier
Description
The HFA1100/883 is a high speed, wideband, fast settling
current feedback amplifier. Built with Intersil’ proprietary,
complementary bipolar UHF-1 process, it is the fastest
monolithic amplifier available from any semiconductor manu-
facturer.
The HFA1100/883’s wide bandwidth, fast settling character-
istic, and low output impedance, make this amplifier ideal for
driving fast A/D converters.
Component and composite video systems will also benefit
from this amplifier’s performance, as indicated by the excel-
lent gain flatness, and 0.03%/0.05 Deg. Differential Gain/
Phase specifications (R
L
= 75Ω).
July 1994
Features
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Low Distortion (HD3, 30MHz) . . . . . . . . . . -84dBc (Typ)
• Wide -3dB Bandwidth . . . . . . . . . . . . . . . 850MHz (Typ)
• Very High Slew Rate . . . . . . . . . . . . . . . 2300V/µs (Typ)
• Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . 11ns (Typ)
• Excellent Gain Flatness (to 50MHz) . . . . . 0.05dB (Typ)
• High Output Current . . . . . . . . . . . . . . . . . . 65mA (Typ)
• Fast Overdrive Recovery . . . . . . . . . . . . . . <10ns (Typ)
Applications
• Video Switching and Routing
• Pulse and Video Amplifiers
• Wideband Amplifiers
• RF/IF Signal Processing
• Flash A/D Driver
• Medical Imaging Systems
Ordering Information
PART NUMBER
HFA1100MJ/883
TEMPERATURE
RANGE
-55
o
C to +125
o
C
PACKAGE
8 Lead CerDIP
Pinout
HFA1100/883
(CERDIP)
TOP VIEW
NC
-IN
+IN
V-
1
2
3
4
-
+
8
7
6
5
NC
V+
OUT
NC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
Spec Number
174
511104-883
FN3615.1
Specifications HFA1100/883
Absolute Maximum Ratings
Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-
Output Current (50% Duty Cycle)
. . . . . . . . . . . . . . . . . . . . . . . . ±55mA
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . < 2000V
Storage Temperature Range . . . . . . . . . . . . . . -65
o
C
≤
T
A
≤
+150
o
C
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300
o
C
Thermal Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
CerDIP Package . . . . . . . . . . . . . . . . . 115
30
o
C/W
o
Maximum Package Power Dissipation at +75 C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.87W
Package Power Dissipation Derating Factor above +75
o
C
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating V
SUPPLY
(±V
S
)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V
Operating Temperature Range. . . . . . . . . . . . .-55
o
C
≤
T
A
≤
+125
o
C
R
L
≥
50Ω
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±5V,
A
V
= +1, R
F
= 510Ω, R
SOURCE
= 0Ω, R
L
= 100Ω, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
Common Mode
Rejection Ratio
Power Supply
Rejection Ratio
CMRR
∆V
CM
=
±2V
V+ = 3V, V- = -7V
V+ = 7V, V- = -3V
∆V
SUPPLY
=
±1.25V
V+ = 6.25V, V- = -5V
V+ = 3.75V, V- = -5V
∆V
SUPPLY
=
±1.25V
V+ = 5V, V- = -6.25V
V+ = 5V, V- = -3.75V
V
CM
= 0V
1
2, 3
1
2, 3
1
2, 3
1
2, 3
CMS
IBP
∆V
CM
=
±2V
V+ = 3V, V- = -7V
V+ = 7V, V- = -3V
Note 1
1
2, 3
1
2, 3
Inverting Input (-IN)
Current
-IN Current Common
Mode Sensitivity
-IN Current Power
Supply Sensitivity
I
BSN
V
CM
= 0V
1
2, 3
CMS
IBN
∆V
CM
=
±2V
V+ = 3V, V- = -7V
V+ = 7V, V- = -3V
∆V
SUPPLY
=
±1.25V
V+ = 6.25V, V- = -5V
V+ = 3.75V, V- = -5V
∆V
SUPPLY
=
±1.25V
V+ = 5V, V- = -6.25V
V+ = 5V, V- = -3.75V
A
V
= -1
R
L
= 100Ω
A
V
= -1
R
L
= 100Ω
V
IN
= -3.5V
V
IN
= -3V
V
IN
=+3.5V
V
IN
= +3V
1
2, 3
1
2, 3
1
2, 3
1
2, 3
1
2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-6
-10
40
38
45
42
45
42
-40
-65
-
-
25
20
-50
-75
-
-
-
-
-
-
3
2.5
-
-
MAX
6
10
-
-
-
-
-
-
40
65
40
50
-
-
50
75
7
10
15
27
15
27
-
-
-3
-2.5
UNITS
mV
mV
dB
dB
dB
dB
dB
dB
µA
µA
µA/V
µA/V
kΩ
kΩ
µA
µA
µA/V
µA/V
µA/V
µA/V
µA/V
µA/V
V
V
V
V
PARAMETERS
Input Offset Voltage
SYMBOL
V
IO
CONDITIONS
V
CM
= 0V
PSRRP
PSRRN
Non-Inverting Input (+IN)
Current
+IN Current Common
Mode Sensitivity
+IN Resistance
I
BSP
+R
IN
PPSS
IBN
NPSS
IBN
Output Voltage Swing
V
OP100
V
ON100
Spec Number
175
511104-883
Specifications HFA1100/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
Device Tested at: V
SUPPLY
=
±5V,
A
V
= +1, R
F
= 510Ω, R
SOURCE
= 0Ω, R
L
= 100Ω, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1, 2
3
1, 2
3
1, 2
3
-I
OUT
Note 2
1, 2
3
Quiescent Power
Supply Current
I
CC
R
L
= 100Ω
1
2, 3
I
EE
R
L
= 100Ω
1
2, 3
NOTES:
1. Guaranteed from +IN Common Mode Rejection Test, by: +R
IN
= 1/CMS
IBP
.
2. Guaranteed from V
OUT
Test with R
L
= 50Ω, by: I
OUT
= V
OUT
/50Ω.
LIMITS
TEMPERATURE
+25
o
C, +125
o
C
-55
o
C
+25
o
C, +125
o
C
-55
o
C
+25
o
C, +125
o
C
-55
o
C
+25
o
C, +125
o
C
-55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2.5
1.5
-
-
50
30
-
-
14
-
-26
-33
MAX
-
-
-2.5
-1.5
-
-
-50
-30
26
33
-14
-
UNITS
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
mA
PARAMETERS
Output Voltage Swing
SYMBOL
V
OP50
CONDITIONS
A
V
= -1
R
L
= 50Ω
A
V
= -1
R
L
= 50Ω
Note 2
V
IN
= -3V
V
IN
= -2V
V
IN
= +3V
V
IN
= +2V
V
ON50
Output Current
+I
OUT
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Specifications in Table 3
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
±5V,
A
V
= +2, R
F
= 360Ω, R
L
= 100Ω, Unless Otherwise Specified.
LIMITS
PARAMETERS
-3dB Bandwidth
SYMBOL
BW(-1)
BW(+1)
BW(+2)
Gain Flatness
GF30
GF50
GF100
CONDITIONS
A
V
= -1, R
F
= 430Ω
V
OUT
=
200mV
P-P
A
V
= +1, R
F
= 510Ω
V
OUT
=
200mV
P-P
A
V
= +2,
V
OUT
=
200mV
P-P
A
V
= +2, R
F
= 510Ω, f
≤
30MHz
V
OUT
=
200mV
P-P
A
V
= +2, R
F
= 510Ω, f
≤
50MHz
V
OUT
=
200mV
P-P
A
V
= +2, R
F
= 510Ω, f
≤
100MHz
V
OUT
=
200mV
P-P
NOTES
1
1
1
1
1
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
300
550
350
-
-
-
MAX
-
-
-
±0.04
±0.10
±0.30
UNITS
MHz
MHz
MHz
dB
dB
dB
Spec Number
176
511104-883
Specifications HFA1100/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
Device Characterized at: V
SUPPLY
=
±5V,
A
V
= +2, R
F
= 360Ω, R
L
= 100Ω, Unless Otherwise Specified.
LIMITS
PARAMETERS
Slew Rate
SYMBOL
+SR(+1)
-SR(+1)
+SR(+2)
-SR(+2)
Rise and Fall Time
T
R
T
F
Overshoot
+OS
-OS
Settling Time
TS(0.1)
TS(0.05)
2nd Harmonic
Distortion
HD2(30)
HD2(50)
HD2(100)
3rd Harmonic
Distortion
HD3(30)
HD3(50)
HD3(100)
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot-to-lot and within lot variation.
2. Measured between 10% and 90% points.
3. For 200ps input transition times. Overshoot decreases as input transition times increase, especially for A
V
= +1. Please refer to
Performance Curves.
CONDITIONS
A
V
= +1, R
F
= 510Ω,V
OUT
=
5V
P-
P
NOTES
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
1, 3
1, 3
1
1
1
1
1
1
1
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
1200
1100
1650
1500
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
-
1
1
25
20
20
33
-48
-45
-35
-65
-60
-40
UNITS
V/µs
V/µs
V/µs
V/µs
ns
ns
%
%
ns
ns
dBc
dBc
dBc
dBc
dBc
dBc
A
V
= +1, R
F
= 510Ω,V
OUT
=
5V
P-
P
A
V
= +2, V
OUT
=
5V
P-P
A
V
= +2, V
OUT
=
5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= +2, V
OUT
=
0.5V
P-P
A
V
= +2, R
F
= 510Ω
V
OUT
=
2V to 0V, to 0.1%
A
V
= +2, R
F
= 510Ω
V
OUT
=
2V to 0V, to 0.05%
A
V
= +2, f = 30MHz, V
OUT
=
2V
P-
P
A
V
= +2, f = 50MHz, V
OUT
=
2V
P-
P
A
V
= +2, f = 100MHz,
V
OUT
=
2V
P- P
A
V
= +2, f = 30MHz,V
OUT
=
2V
P-P
A
V
= +2, f = 50MHz, V
OUT
=
2V
P-
P
A
V
= +2, f = 100MHz,
V
OUT
=
2V
P-P
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
1. PDA applies to Subgroup 1 only.
SUBGROUPS (SEE TABLE 1)
1
1 (Note 1), 2, 3
1, 2, 3
1
Spec Number
177
511104-883
HFA1100/883
Die Characteristics
DIE DIMENSIONS:
63 x 44 x 19 mils
±
1 mils
1600µm x 1130µm x 483µm
±
25.4µm
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8k
Å
±
0.4k
Å
GLASSIVATION:
Type: Nitride
Thickness: 4k
Å
±
0.5k
Å
WORST CASE CURRENT DENSITY:
2.0 x 10
5
A/cm
2
at 47.5mA
TRANSISTOR COUNT:
52
SUBSTRATE POTENTIAL (Powered Up):
Floating (Recommend Connection to V-)
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16k
Å
±
0.8k
Å
Metallization Mask Layout
HFA1100/883
+IN
-IN
V-
V
L
BAL
BAL
V
H
V+
OUT
Spec Number
178
511104-883
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