电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

HFA100MD60C

产品描述100 A, SILICON, RECTIFIER DIODE, TO-244AB
产品类别分立半导体    二极管   
文件大小133KB,共5页
制造商International Rectifier ( Infineon )
官网地址http://www.irf.com/
下载文档 详细参数 全文预览

HFA100MD60C概述

100 A, SILICON, RECTIFIER DIODE, TO-244AB

HFA100MD60C规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称International Rectifier ( Infineon )
包装说明R-PUFM-X3
Reach Compliance Codecompli
ECCN代码EAR99
应用GENERAL PURPOSE
外壳连接ISOLATED
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.34 V
JEDEC-95代码TO-244AB
JESD-30 代码R-PUFM-X3
JESD-609代码e0
最大非重复峰值正向电流400 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最大输出电流100 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压600 V
最大反向电流40 µA
最大反向恢复时间0.115 µs
表面贴装NO
端子面层TIN LEAD
端子形式UNSPECIFIED
端子位置UPPER
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

下载PDF文档
PD-2.442
HFA100MD60C
HEXFRED
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
TM
Ultrafast, Soft Recovery Diode
LUG
LUG
LUG
TERMINAL TERMINAL TERMINAL
ANODE 1 CATHODE ANODE 2
V
R
= 600V
V
F
= 1.4V
Q
rr
* = 780nC
BASE (ISOLATED)
di
(rec)M
/dt * = 240A/µs
*
125°C
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
TM
TO-244AB
(ISOLATED)
Absolute Maximum Ratings (per Leg)
Parameter
V
R
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FSM
I
AS
E
AS
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Maximum Single Pulse Avalanche Current
Non-Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
600
83
40
400
2.0
220
180
71
-55 to +150
Units
V
A
µJ
W
C
Thermal - Mechanical Characteristics
Parameter
R
θ
JC
R
θ
CS
Wt
Junction-to-Case, Single Leg Conducting
Junction-to-Case, Both Legs Conducting
Case-to-Sink, Flat , Greased Surface
Weight
Mounting Torque
See Fig. 12
Terminal Torque
Limited by junction temperature
L = 100µH, duty cycle limited by max T
J
Min.
––––
––––
––––
––––
35 (4.0)
50 (5.7)
Typ.
––––
––––
0.10
79 (2.8)
––––
––––
Max.
0.70
0.35
––––
––––
50 (5.7)
75 (8.5)
Units
°C/W
K/W
g (oz)
lbf•in
(N•m)
Note:
Revision 0

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 284  410  1080  242  758  51  15  35  56  36 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved