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IS62WV5128ALL-70BI: 产品描述Standard SRAM, 512KX8, 70ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36; 产品类别存储存储; 文件大小108KB，共16页; 制造商Integrated Silicon Solution ( ISSI )

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IS62WV5128ALL-70BI概述

Standard SRAM, 512KX8, 70ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36

IS62WV5128ALL-70BI规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
零件包装代码	BGA
包装说明	TFBGA, BGA36,6X8,30
针数	36
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
最长访问时间	70 ns
I/O 类型	COMMON
JESD-30 代码	R-PBGA-B36
JESD-609代码	e0
长度	8 mm
内存密度	4194304 bit
内存集成电路类型	STANDARD SRAM
内存宽度	8
湿度敏感等级	3
功能数量	1
端子数量	36
字数	524288 words
字数代码	512000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	512KX8
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TFBGA
封装等效代码	BGA36,6X8,30
封装形状	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	1.8/2 V
认证状态	Not Qualified
座面最大高度	1.2 mm
最大待机电流	0.000015 A
最小待机电流	1.2 V
最大压摆率	0.03 mA
最大供电电压 (Vsup)	2.2 V
最小供电电压 (Vsup)	1.65 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	BALL
端子节距	0.75 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	6 mm
Base Number Matches	1

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IS62WV5128ALL

IS62WV5128BLL

512K x 8 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

FEATURES

• High-speed access time: 55ns, 70ns

• CMOS low power operation

36 mW (typical) operating

9 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply

1.65V – 2.2V V

(IS62WV5128ALL)

2.5V – 3.6V V

(IS62WV5128BLL)

• Fully static operation: no clock or refresh

required

• Three state outputs

• Industrial temperature available

ISSI

DECEMBER 2003

DESCRIPTION

The

ISSI

IS62WV5128ALL / IS62WV5128BLL are high-

speed, 4M bit static RAMs organized as 512K words by 8

bits. It is fabricated using

ISSI

's high-performance CMOS

technology. This highly reliable process coupled with

innovative circuit design techniques, yields high-

performance and low power consumption devices.

When

CS1

is HIGH (deselected) the device assumes a

standby mode at which the power dissipation can be

reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE)

controls both writing and reading of the memory.

The IS62WV5128ALL and IS62WV5128BLL are packaged

in the JEDEC standard 32-pin TSOP (TYPE I), 32-pin

sTSOP (TYPE I), 32-pin TSOP (Type II), and 36-pin mini

BGA.

FUNCTIONAL BLOCK DIAGRAM

A0-A18

DECODER

512K x 8

MEMORY ARRAY

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

COLUMN I/O

CS1

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. B

12/10/03

IS62WV5128ALL-70BI相似产品对比

	IS62WV5128ALL-70BI	IS62WV5128BLL-55H	IS62WV5128ALL-70TI
描述	Standard SRAM, 512KX8, 70ns, CMOS, PBGA36, 6 X 8 MM, MINI, BGA-36	Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, PLASTIC, STSOP1-32	Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, PLASTIC, TSOP1-32
是否无铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合
零件包装代码	BGA	TSOP1	TSOP1
包装说明	TFBGA, BGA36,6X8,30	PLASTIC, STSOP1-32	PLASTIC, TSOP1-32
针数	36	32	32
Reach Compliance Code	compliant	compliant	compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	70 ns	55 ns	70 ns
I/O 类型	COMMON	COMMON	COMMON
JESD-30 代码	R-PBGA-B36	R-PDSO-G32	R-PDSO-G32
JESD-609代码	e0	e0	e0
长度	8 mm	11.8 mm	18.4 mm
内存密度	4194304 bit	4194304 bit	4194304 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8
功能数量	1	1	1
端子数量	36	32	32
字数	524288 words	524288 words	524288 words
字数代码	512000	512000	512000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	70 °C	85 °C
最低工作温度	-40 °C	-	-40 °C
组织	512KX8	512KX8	512KX8
输出特性	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TFBGA	TSOP1	TSOP1
封装等效代码	BGA36,6X8,30	TSSOP32,.56,20	TSSOP32,.8,20
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	1.8/2 V	3/3.3 V	1.8/2 V
认证状态	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.25 mm	1.2 mm
最大待机电流	0.000015 A	0.000015 A	0.000015 A
最小待机电流	1.2 V	1.2 V	1.2 V
最大压摆率	0.03 mA	0.04 mA	0.03 mA
最大供电电压 (Vsup)	2.2 V	3.6 V	2.2 V
最小供电电压 (Vsup)	1.65 V	2.5 V	1.65 V
标称供电电压 (Vsup)	1.8 V	2.8 V	1.8 V
表面贴装	YES	YES	YES
技术	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	BALL	GULL WING	GULL WING
端子节距	0.75 mm	0.5 mm	0.5 mm
端子位置	BOTTOM	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	6 mm	8 mm	8 mm
Base Number Matches	1	1	1

IS62WV5128ALL-70BI

IS62WV5128ALL-70BI概述

IS62WV5128ALL-70BI规格参数

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