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1N5618-TR

产品描述Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS, SIMILAR TO DO-204, 2 PIN
产品类别分立半导体    二极管   
文件大小412KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
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1N5618-TR概述

Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS, SIMILAR TO DO-204, 2 PIN

1N5618-TR规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
零件包装代码DO-204
包装说明HERMETIC SEALED, GLASS, SIMILAR TO DO-204, 2 PIN
针数2
Reach Compliance Codecompli
ECCN代码EAR99
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码O-LALF-W2
JESD-609代码e0
元件数量1
端子数量2
最大输出电流1 A
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
参考标准MIL-19500/427K
最大反向恢复时间2 µs
表面贴装NO
端子面层TIN LEAD
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

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1N5614 thru 1N5622
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-
19500/427 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in surface mount MELF package configurations by adding a “US”
suffix (see separate data sheet for 1N5614US thru 1N5622US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including fast and ultrafast device
types in both through-hole and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
“A” Package
FEATURES
Popular JEDEC registered 1N5614 to 1N5622 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category
I”
Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/427
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N5614US thru 1N5622US)
APPLICATIONS / BENEFITS
Standard recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
Junction & Storage Temperature: -65
o
C to +200
o
C
Thermal Resistance: 38
o
C/W junction to lead at 3/8
inch (10 mm) lead length from body
Thermal Impedance: 4.5
o
C/W @ 10 ms heating time
Average Rectified Forward Current (I
O
): 1.0 Amps @
T
A
= 55ºC and 0.75 Amps @ T
A
= 100ºC
Forward Surge Current: 30 Amps @ 8.3 ms half-sine
Solder Temperatures: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
TAPE & REEL option: Standard per EIA-296
WEIGHT: 340 mg
See package dimensions on last page
REVERSE
CURRENT
(MAX.)
I
R
@ V
RWM
o
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE V
RWM
VOLTS
1N5614
1N5616
1N5618
1N5620
1N5622
200
400
600
800
1000
MINIMUM
BREAKDOWN
VOLTAGE
V
BR
@ 50µA
VOLTS
220
440
660
880
1100
AVERAGE
RECTIFIED
CURRENT
I
O
@ T
A
(NOTE 1)
AMPS
o
o
55 C
100 C
1.00
.750
1.00
.750
1.00
.750
1.00
.750
1.00
.750
FORWARD
VOLTAGE
(MAX.)
V
F
@ 3A
VOLTS
25 C
0.5
0.5
0.5
0.5
0.5
MAXIMUM
SURGE
CURRENT
I
FSM
(NOTE 2)
AMPS
o
REVERSE
RECOVERY
(NOTE 3)
t
rr
µs
2.0
2.0
2.0
2.0
2.0
1N5614 – 1N5622
µA
0.8 MIN.
1.3 MAX.
o
o
o
o
NOTE 1:
From 1 Amp at T
A
= 55 C, derate linearly at 5.56 mA/ C to 0.75 Amp at T
A
= 100 C. From T
A
= 100 C,
derate linearly at 7.5 mA/
o
C to 0 Amps at T
A
= 200
o
C. These ambient ratings are for PC boards where thermal
o
resistance from mounting point to ambient is sufficiently controlled where T
J(max)
does not exceed 175 C.
o
NOTE 2:
T
A
= 100 C, f = 60 Hz, I
O
= 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3:
I
F
= 0.5A, I
RM
= 1A, I
R(REC)
= 0.250A
100 C
25
25
25
25
25
30
30
30
30
30
Copyright
2004
12-06-2004 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

1N5618-TR相似产品对比

1N5618-TR 1N5618E3-TR 1N5614E3
描述 Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS, SIMILAR TO DO-204, 2 PIN Rectifier Diode, 1 Element, 1A, Silicon, HERMETIC SEALED, GLASS, SIMILAR TO DO-204, 2 PIN Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, MICRO MINIATURE, GLASS PACKAGE-2
包装说明 HERMETIC SEALED, GLASS, SIMILAR TO DO-204, 2 PIN HERMETIC SEALED, GLASS, SIMILAR TO DO-204, 2 PIN MICRO MINIATURE, GLASS PACKAGE-2
Reach Compliance Code compli compliant compliant
ECCN代码 EAR99 EAR99 EAR99
外壳连接 ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 O-LALF-W2 O-LALF-W2 O-LALF-W2
元件数量 1 1 1
端子数量 2 2 2
最大输出电流 1 A 1 A 1 A
封装主体材料 GLASS GLASS GLASS
封装形状 ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM
最大反向恢复时间 2 µs 2 µs 2 µs
表面贴装 NO NO NO
端子形式 WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL
其他特性 METALLURGICALLY BONDED METALLURGICALLY BONDED -
参考标准 MIL-19500/427K MIL-19500/427K -
Base Number Matches 1 1 -
厂商名称 - Microsemi Microsemi
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