PD -93910B
IRLBD59N04E
HEXFET
®
Power MOSFET
Integrated Temperature Sensing Diode
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fully Avalanche Rated
Zener Gate Protected
Description
The IRLBD59N04E is a 40V, N-channel HEXFET
®
power MOSFET with gate protection provided by
integrated back to back zener diodes. Temperature
sensing is given by the change in forward voltage drop
of two antiparallel electrically isolated poly-silicon diodes.
The IRLBD59N04E provides cost effective temperature
sensing for system protection along with the quality and
ruggedness you expect from a HEXFET power MOSFET.
V
DSS
= 40V
R
DS(on)
= 0.018Ω
I
D
= 59A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
I
G
V
ESD
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
V
GS
Clamp Current
Electrostatic Votage Rating
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
5 Lead-D
2
Pak
Max.
59
41
230
130
0.89
± 10
340
35
13
3.6
± 50
± 2.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
mA
kV
°C
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
1.12
40
Units
°C/W
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11/13/01
IRLBD59N04E
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Clamp Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
V
GS
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min.
40
–––
–––
–––
1.0
10
29
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.044
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.8
84
33
67
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.018
V
GS
= 10V, I
D
= 35A
Ω
0.021
V
GS
= 5.0V, I
D
= 30A
2.0
V
V
DS
= V
GS
, I
D
= 250µA
20
V
I
GSS
= 20µA
–––
S
V
DS
= 25V, I
D
= 35A
25
V
DS
= 40V, V
GS
= 0V
µA
250
V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
1.0
V
GS
= 5.0V
µA
-1.0
V
GS
= -5.0V
50
I
D
= 35A
13
nC V
DS
= 32V
18
V
GS
= 5.0V, See Fig. 6 and 13
–––
V
DD
= 20V
–––
I
D
= 35A
ns
–––
R
G
= 5.1Ω,
–––
V
GS
= 5.0V, See Fig.10
Between lead,
2.0 –––
6mm (0.25in.)
nH
G
from package
5.0 –––
and center of die contact
2190 –––
V
GS
= 0V
670 –––
V
DS
= 25V
130 –––
pF ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 59
showing the
A
G
integral reverse
––– ––– 230
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 35A, V
GS
= 0V
––– 57
86
ns
T
J
= 25°C, I
F
= 35A
––– 84 130
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Sense Diode Rating
V
FM
∆V
F
/∆T
J
Parameter
Sense Diode Maximum Voltage Drop
Sense Diode Temperature Coefficient
Min. Typ. Max. Units
Conditions
675 ––– 725
mV I
F
= 250µA, T
J
= 25°C
-1.30 -1.40 -1.58 mV/°C I
F
= 250µA, (T
J
= 25°C and 160°C)
2
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IRLBD59N04E
1000
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
1000
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
TOP
10
2.7V
2.7V
10
1
0.1
1
300µs PULSE WIDTH
T J = 25°C
10
100
1
0.1
1
300µs PULSE WIDTH
T J = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
T J = 25°C
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current
(Α
)
ID = 59A
VGS = 10V
2.0
100
(Normalized)
T J = 175°C
1.5
1.0
10
2.0
4.0
VDS = 15V
300µs PULSE WIDTH
6.0
8.0
10.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRLBD59N04E
100000
VGS = 0V,
f = 1 MHZ
C iss
= C gs + Cgd ,
SHORTED
Crss = C gd
Coss = Cds + Cgd
6.0
C ds
ID= 35A
VGS, Gate-to-Source Voltage (V)
5.0
4.0
3.0
2.0
1.0
VDS= 32V
VDS= 20V
VDS= 8.0V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
100
FOR TEST CIRCUIT
SEE FIGURE 13
0.0
0
10
20
30
40
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100.0
T J = 175°C
10.0
T J = 25°C
1.0
ID, Drain-to-Source Current (A)
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
1msec
10msec
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, Source-toDrain Voltage (V)
100
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLBD59N04E
60
LIMITED BY PACKAGE
50
ID , Drain Current (A)
V
DS
V
GS
R
G
R
D
D.U.T.
+
40
30
20
10
V
DS
-
V
DD
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
90%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
10
(Z
thJC
)
1
D = 0.50
Thermal Response
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
t
1
/ t
2
+T
C
0.1
P
DM
t
1
t
2
J
= P
DM
x Z
thJC
0.01
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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