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JAN2N6796

产品描述Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
产品类别分立半导体    晶体管   
文件大小165KB,共23页
制造商Defense Logistics Agency
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JAN2N6796概述

Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

JAN2N6796规格参数

参数名称属性值
厂商名称Defense Logistics Agency
包装说明CYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknown
ECCN代码EAR99
外壳连接DRAIN
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压100 V
最大漏极电流 (Abs) (ID)8 A
最大漏极电流 (ID)8 A
最大漏源导通电阻0.18 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码TO-205AF
JESD-30 代码O-MBCY-W3
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料METAL
封装形状ROUND
封装形式CYLINDRICAL
极性/信道类型N-CHANNEL
功耗环境最大值0.8 W
最大功率耗散 (Abs)25 W
最大脉冲漏极电流 (IDM)32 A
认证状态Qualified
参考标准MIL-19500
表面贴装NO
端子形式WIRE
端子位置BOTTOM
晶体管应用SWITCHING
晶体管元件材料SILICON
最大关闭时间(toff)85 ns
最大开启时间(吨)105 ns
Base Number Matches1

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The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 09 March 1998
INCH-POUND
MIL-PRF-19500/557F
09 December 1997
SUPERSEDING
MIL-S-19500/557E
9 December 1994
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor
intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated
device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1, TO-205AF (formerly TO-39), figure 3 (LCC), and figure 4 for JANHC and JANKC die
dimensions.
1.3 Maximum ratings. Unless otherwise specified, TA = +25

C.
Type
3/
PT 1/
PT
TC = +25

C TA = +25

C
W
2N6796
2N6798
2N6800
2N6802
25
25
25
25
W
0.8
0.8
0.8
0.8
VDS
VDG
VGS
ID1 2/
TC = +25

C
A dc
8.0
5.5
3.0
2.5
ID2 2/
TC = +100

C
A dc
5.0
3.5
2.0
1.5
IS
IDM
TJ and
TSTG
V dc
100
200
400
500
V dc
100
200
400
500
V dc
A dc
8.0
5.5
3.0
2.5
A(pk)
32
22
14
11

C
-55 to +150
-55 to +150
-55 to +150
-55 to +150

20

20

20

20
1/ Derate linearly 0.2 W/

C for TC > +25

C.
TJ max - TC
PT =
R

JC
I
D
=
2/
( R
θ
JX)
T
J(
max
)
- T
C
x ( R
DS(on)
at T
J(
max
)
3/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961

 
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