BC556 thru BC558
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (PNP)
TO-226AA (TO-92)
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
Features
• PNP Silicon Epitaxial Planar Transistors for switch-
ing and AF amplifier applications.
• These transistors are subdivided into three groups
A, B, and C according to their current gain.
The type BC556 is available in groups A and B,
however, the types BC557 and BC558 can be
supplied in all three groups. As complementary
types, the NPN transistors BC546...BC548 are
recommended.
• On special request, these transistors are also
manufactured in the pin configuration TO-18.
max.
∅
0.022 (0.55)
0.098 (2.5)
Dimensions in inches
and (millimeters)
Mechanical Data
Case:
TO-92 Plastic Package
Weight:
approx. 0.18g
Packaging Codes/Options:
E6/Bulk – 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
Bottom
View
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Base Voltage
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
Symbol
–V
CBO
Ratings at 25°C ambient temperature unless otherwise specified.
Value
80
50
30
80
50
30
65
45
30
5
100
200
200
200
500
(1)
250
(1)
150
–65 to +150
Unit
V
Collector-Emitter Voltage
–V
CES
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
amb
= 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
–V
CEO
–V
EBO
–I
C
–I
CM
–I
BM
I
EM
P
tot
R
ΘJA
T
j
T
S
V
V
mA
mA
mA
mA
mW
°C/W
°C
°C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
Document Number 88161
09-May-02
www.vishay.com
1
BC556 thru BC558
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Parameter
Current gain group
J
= 25°C unless otherwise noted)
Symbol
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
–V
CEsat
–V
BEsat
–V
BE
BC556
BC557
BC558
BC556
BC557
BC558
h
FE
h
fe
Test Condition
–V
CE
= 5V, –I
C
= 2mA,
f = 1 kHz
–V
CE
= 5V, –I
C
= 2mA,
f = 1kHz
–V
CE
= 5V, –I
C
= 2mA,
f = 1kHz
–V
CE
= 5V, –I
C
= 2mA,
f = 1kHz
Min
—
—
—
1.6
3.2
6
—
—
—
—
—
—
—
—
—
110
200
420
—
—
—
—
—
—
—
600
—
—
—
—
—
—
—
—
—
—
Typ
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10
-4
2 · 10
-4
3 · 10
-4
90
150
270
180
290
500
120
200
400
80
250
700
900
660
—
0.2
0.2
0.2
—
—
—
150
—
2
Max
—
—
—
4.5
8.5
15
30
60
110
—
—
—
—
—
—
220
450
800
—
—
—
300
650
—
—
750
800
15
15
15
4
4
4
—
6
10
Unit
—
Small Signal Current Gain
Current gain group
Input Impedance
Current gain group
h
ie
kΩ
Output Admittance
Current gain group
h
oe
µS
Reverse Voltage Transfer Ratio
Current gain group
h
re
—
–V
CE =
5V, –I
C
= 10µA
Current gain group
DC Current Gain
Current gain group
–V
CE =
5V, –I
C
= 2mA
—
–V
CE =
5V, –I
C
= 100mA
–I
C
= 10mA, –I
B
= 0.5mA
–I
C
= 100mA, –I
B
= 5mA
–I
C
= 10mA, –I
B
= 0.5mA
–I
C
= 100mA, –I
B
= 5mA
–V
CE
= 5V, –I
C
= 2mA
–V
CE
= 5V, –I
C
= 10mA
–V
CE
= 80V
–V
CE
= 50V
–V
CE
= 30V
–V
CE
= 80V, T
j
= 125°C
–V
CE
= 50V, T
j
= 125°C
–V
CE
= 30V, T
j
= 125°C
–V
CE
= 5V, –I
C
= 10mA,
f = 100MHz
–V
CB
= 10V, f = 1MHz
–V
CE
= 5V, –I
C
= 200µA,
R
G
= 2kΩ, f = 1kHz,
∆f
= 200Hz
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter Voltage
mV
mV
mV
nA
nA
nA
µA
µA
µA
MHz
pF
dB
Collector-Emitter
Cutoff Current
–I
CES
Gain-Bandwidth Product
Collector-Base Capacitance
Noise Figure
BC556, BC557, BC558
f
T
C
CBO
F
www.vishay.com
2
Document Number 88161
09-May-02
模拟电子
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