FLC107WG
C-Band Power GaAs FET
FEATURES
• High Output Power: P1dB = 30.0dBm(Typ.)
• High Gain: G1dB = 8.0dB(Typ.)
• High PAE:
η
add = 36%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
DESCRIPTION
The FLC107WG is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Eudyna
stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25°C
Condition
Rating
15
-5
7.5
-65 to +175
175
Unit
V
V
W
°C
°C
Eudyna
recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed +10 volts.
2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with
gate resistance of 500Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
η
add
Rth
Channel to Case
VDS = 10V,
IDS
=
0.6 IDSS (Typ.),
f = 8 GHz
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 250mA
VDS = 5V, IDS = 20mA
IGS = -20µA
Min.
-
-
-1.0
-5
28.5
7.0
-
-
Limit
Typ. Max.
400
200
-2.0
-
30.0
8.0
36
16
600
-
-3.5
-
-
-
-
20
Unit
mA
mS
V
V
dBm
dB
%
°C/W
Power Gain at 1dB G.C.P.
Power-added Efficiency
Thermal Resistance
CASE STYLE:
WG
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1
FLC107WG
C-Band Power GaAs FET
POWER DERATING CURVE
10
Total Power Dissipation (W)
8
6
4
2
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
500
400
300
200
100
VGS =0V
-0.5V
-1.0V
-1.5V
-2.0V
0
50
100
150
200
0
2
4
6
8
10
Drain Current (mA)
Case Temperature (°C)
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
VDS=10V
31
IDS
≈
0.6 IDSS
P1dB &
η
add vs. VDS
f=8GHz
IDS
≈
0.6 IDSS
Output Power (dBm)
6 GHz
8 GHz
P1dB (dBm)
29
27
25
23
21
19
η
add
Pout
31
30
29
P1dB
η
add
50
40
30
η
add (%)
50
40
30
20
10
η
add (%)
6 GHz
8 GHz
12 14 16 18 20 22
Input Power (dBm)
8
9
10
Drain-Source Voltage (V)
2
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