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5962-8981701XA

产品描述UVPROM, 32KX8, 55ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, WINDOWED, DIP-28
产品类别存储    存储   
文件大小280KB,共9页
制造商e2v technologies
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5962-8981701XA概述

UVPROM, 32KX8, 55ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, WINDOWED, DIP-28

5962-8981701XA规格参数

参数名称属性值
零件包装代码DIP
包装说明0.300 INCH, CERAMIC, WINDOWED, DIP-28
针数28
Reach Compliance Codecompliant
ECCN代码EAR99
最长访问时间55 ns
其他特性POWER SWITCHED PROM
I/O 类型COMMON
JESD-30 代码R-GDIP-T28
JESD-609代码e0
长度37.338 mm
内存密度262144 bit
内存集成电路类型UVPROM
内存宽度8
功能数量1
端子数量28
字数32768 words
字数代码32000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织32KX8
输出特性3-STATE
封装主体材料CERAMIC, GLASS-SEALED
封装代码DIP
封装等效代码DIP28,.3
封装形状RECTANGULAR
封装形式IN-LINE
并行/串行PARALLEL
电源5 V
编程电压13 V
认证状态Qualified
筛选级别MIL-STD-883
座面最大高度5.715 mm
最大待机电流0.04 A
最大压摆率0.13 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级MILITARY
端子面层TIN LEAD
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
宽度15.24 mm
Base Number Matches1

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QP7C271
July 31, 2008
32K x 8 Power-Switched and Reprogrammable PROM
Features
• 5V ±10% VCC, commercial, industrial and military
• Windowed Packages available for re-programmability
• OTP (One-Time-Programmable) Packages available
• High speed
- 25 ns (commercial)
- 35 ns (military)
• CMOS for optimum speed/power
• Slim 300-mil package available
• Direct replacement for Cypress
PROMs
• Direct replacement for bipolar PROMs
• EPROM technology 100%
programmable
• Low power
- 715 mW (military)
- 660 mW (commercial)
• Super Low standby power
- 165 mW when deselected
• TTL-compatible I/O
General Description
The QP7C271 is a high-performance 32,768-word by 8-bit CMOS PROM. When disabled (CE
BAR
HIGH), the
QP7C271 automatically powers down into a low-power stand-by mode. The QP7C271 is packaged in the 300-mil
slim package. The QP7C271 is available in a hermetic package equipped with an erasure window to provide for
re-programmability. When exposed to UV light, the PROM is erased and can be reprogrammed. The memory
cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms.
The QP7C271 offers the advantage of lower power, superior performance, and programming yield. The EPROM
cell requires only 12.5V for the super voltage, and low current requirements allow for gang programming. The
EPROM cells allow each memory location to be tested 100% because each location is written into, erased, and
repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that
after customer programming, the product will meet DC and AC specification limits.
Reading the QP7C271 is accomplished by placing active LOW signals on CS
1 BAR
and CE
BAR
, and an active HIGH
on CS
2
. The contents of the memory location addressed by the address lines (A0
A14) will become available
on the output lines (O0
O7).
The device is available in windowed hermetic package (Erasable when exposed to UV light) and is also
available in non-windowed OTP (One-Time-Programmable) hermetic or plastic packages.
QP Semiconductor products are not authorized for use in any space applications. The inclusion of QP Semiconductor
products in space applications implies that the space application manufacturer assumes all risk of such use and in doing
so indemnifies QP Semiconductor against all charges.
2945 Oakmead Village Ct, Santa Clara, CA 95051
Phone:
(408) 737-0992
Fax:
(408) 736—8708
Internet:
www.qpsemi.com

 
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