OMH310
OMH315
DUAL, LOW VOLTAGE, LOW R
DS(on)
, MOSFET
H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE
Dual 50 Volt, 15 And 20 Amp H-Bridge
With Current And Temperature Sensing
In A Low Profile Plastic Package
FEATURES
•
•
•
•
•
•
H-Bridge Configuration
Zener Gate Protection
10 m Shunt Resistor
2 Linear Thermal Sensors, One For Each Bridge
Isolated Package
Output Currents Up To 20 Amps
DESCRIPTION
This series of MOSFET switches is configured as a Dual H-Bridge with common V
DD
lines, precision series shunt resistor in the source line, and sensing elements to
monitor the substrate temperature of each switch. This device is ideally suited for
Stepping Motor Control applications where size, performance, and efficiency are key.
2.1
MAXIMUM RATINGS
(T
C
= @ 25°C)
Part
Number
OMH310
OMH315
V
DS
(Volts)
50
50
R
DS(on)
(m )
100
70
I
D
(Amps)
15
20
Package
MP-3
MP-3
ABSOLUTE MAXIMUM RATINGS
(T
C
= @ 25°C unless otherwise noted)
Parameter
Drain Source Voltage, V
DS
Drain-Gate (R
GS
= 1m ), V
DGR
Continuous Drain Current, I
D
@ T
C
= 25°C
Continuous Drain Current,
I
D
@ T
C
= 70°C
Pulse Drain Current, I
DM (1)
Maximum Power Dissipation, P
D
@ T
C
= 25°C
Maximum Power Dissipation,
P
D
@ T
C
= 70°C
Linear Derating Factor, Junction-To-Case
Thermal Resistance, Junction-To-Case
OMH310
50
50
15
11
56
20
11
0.2
5.0
OMH315
50
50
25
16
100
50
18
0.33
3.0
Units
V
V
A
A
A
W
W
W/C
°C/W
(2)
(2)
Notes:
(1) Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%. (2) Maximum Junction Temperature = 125°C.
4 11 R0
2.1 - 29
OMH310 OMH315
ELECTRICAL CHARACTERISTICS: OMH310
(T
C
= 25° unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 µA, V
GS
= 0
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 70°C
Gate-Body Leakage, V
GS
= ±12 V
I
GSS
V
(BR)DSS
I
DSS
50
-
-
-
-
-
-
-
-
25.0
500.0
±500
V
µA
µA
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS
= V
GS
, I
D
= 250 µA
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 9.0 A
Static Drain-Source On-Resistance
T
C
= 70°C
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., V
GS
= 10 V
I
D(on)
V
GS(th)
R
DS(on)
2.0
-
-
15
-
-
-
-
4.0
0.1
0.2
-
A
V
DYNAMIC CHARACTERISTICS
Forward Transconductance, V
DS
> I
D(on)
X R
DS(on)
Max., I
D
= 9.0A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V,
V
GS
= 0,
f = 1.0 mHz
g
fs
C
iss
C
oss
C
rss
3.0
-
-
-
-
-
-
-
-
650
450
280
mho
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
DD
= 30 V, I
D
=
3 A,
R
GS
= 50 , V
GS
= 10 V
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
-
-
-
-
30
85
90
110
ns
ns
ns
ns
2.1
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
Source - Drain Current Pulsed
Forward On-Voltage, I
SD
= 28 A, V
GS
= 0
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 13 A, di/dt = 100 A/µSec
I
SD
I
SDM
*
V
SD
t
rr
Q
rr
-
-
-
-
-
-
-
-
120
0.15
14
56
1.8
-
-
A
A
V
ns
µC
RESISTOR CHARACTERISTICS
Resistor Tolerance
Temperature Coefficient, -40°C to +70°C
R
S
T
cr
9.0
-
10
100
11
-
m
ppm
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%
2.1 - 30
OMH310 OMH315
ELECTRICAL CHARACTERISTICS: OMH315A
(T
C
= 25° unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 µA, V
GS
= 0
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
V
DS
= Max. Rat. x 0.8, T
C
= 70°C
Gate-Body Leakage, V
GS
= ±12 V
I
GSS
V
(BR)DSS
I
DSS
50
-
-
-
-
-
-
-
-
250
750
±500
V
µA
µA
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS
= V
GS
, I
D
= 250 µA
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 10 A
Static Drain-Source On-Resistance
T
C
= 70°C
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., V
GS
= 10 V
I
D(on)
V
GS(th)
R
DS(on)
2.0
-
-
20
-
-
-
-
4.0
0.07
0.14
-
A
V
DYNAMIC CHARACTERISTICS
Forward Transconductance, V
DS
> I
D(on)
X R
DS(on)
Max., I
D
= 10 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V,
V
GS
= 0,
f = 1.0 mHz
g
fs
C
iss
C
oss
C
rss
5.0
-
-
-
-
1020
500
120
-
-
-
-
mho
pF
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
DD
= 30 V, I
D
=
10 A,
R
GS
= 4.7 , V
GS
= 10 V,
R
L
= 2.4
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
-
-
-
-
50
75
50
50
ns
ns
ns
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
Source - Drain Current (Pulsed)
Forward On-Voltage, I
SD
= 28 A, V
GS
= 0
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 13 A,di/dt = 100 A/µSec
I
SD
I
SDM
*
V
SD
t
rr
Q
rr
-
-
-
-
-
-
-
-
100
0.15
25
100
2.4
-
-
A
A
V
ns
µC
2.1
RESISTOR CHARACTERISTICS
Resistor Tolerance
Temperature Coefficient, -40°C to +70°C
R
S
T
cr
9.0
-
10
100
11
-
m
ppm
* Indicates Pulse Test 300 µsec, Duty Cycle 1.5%
2.1 - 31
OMH310 OMH315
SCHEMATIC
32 26
31 30 29
28 27 24 25
23 18
Q1
34
33
R1
Z1
Q3
R3
Z3
Q5
R5
Z5
Q7
R7
Z7
20
19
Q2
1
2
PTC 1
RS
R2
Z2
Q4
R4
Z4
Q6
R6
Z6
RS
Q8
R8
Z8
PTC 2
14
15
3
4
7
6
5
8
11 12
13
9
16 10
17
21
22
2.1
MECHANICAL OUTLINE
.600
2.000
1.350
.325
.150
(4) PLCS.
.250
.500
. 35
1
.050
(34) PLCS.
1
.150
2.450
3.000
4.000
.300
.500
.360
.020
.360 MAX.
.180
.250
Pin 1:
Pin 2:
Pin 3:
Pin 4:
Pin 5:
Pin 6:
Pin 7:
Pin 8:
Pin 9:
Pin 10:
Pin 11:
Pin 12:
Pin 13:
Pin 14:
Pin 15:
Pin 16:
Pin 17:
Gate Q2
Source Q2
PTC 1
PTC 1
Gate Q4
Source Q4
Sense R 1
Sense R 1
Gate Q6
Source Q6
Return Sense
Return
Return
Gate Q8
Source Q8
Sense R 2
Sense R 2
Pin 34: Gate Q1
Pin 33: Source Q1
Pin 32: Output Q1, Q2
Pin 31: Gate Q3
Pin 30: Source Q3
Pin 29: V
M
Pin 28: V
M
Pin 27: V
M
Pin 26: Output Q3, Q4
Pin 25: Gate Q5
Pin 24: Source Q5
Pin 23: Output Q5, Q6
Pin 22: +PTC
Pin 21: -PTC
Pin 20: Gate Q7
Pin 19: Source Q7
Pin 18: Output Q7, Q8
Contact factory for lead bending options.
Mounting Recommendations: Maximum Mounting Torque: 3.0 mN.
The module must be attached to a flat heat sink (flatness 100µm maximum).
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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