Radiation Hardened 9A, Non-Inverting Power
MOSFET Drivers
ISL74422ARH
The Radiation Hardened ISL74422ARH is a non-inverting,
monolithic high-speed MOSFET driver designed to
convert a CMOS level input signal into a high current
output at voltages up to 18V. Its fast rise times and high
current output allow very quick control of even the
largest power MOSFETs in high frequency applications.
The input of the ISL74422ARH can be directly driven by
our HS-1825ARH and IS-1845ASRH PWM devices. The
9A high current output minimizes power losses in
MOSFETs by rapidly charging and discharging high gate
capacitances.
Constructed with the Intersil dielectrically isolated Rad
Hard Silicon Gate (RSG) BiCMOS process, these devices
are immune to Single Event Latch-up and have been
specifically designed to provide highly reliable
performance in harsh radiation environments.
Specifications for Rad Hard QML devices are
controlled by the Defense Supply Center in
Columbus (DSCC). The SMD numbers listed here
must be used when ordering.
Detailed Electrical Specifications for these
devices are contained in SMD 5962-01521. A link
is provided on our website for downloading.
ISL74422ARH
Features
• QML Qualified per MIL-PRF-38535 Requirements
• Electrically Screened to DSCC SMD # 5962-01521
• Radiation Environment
- Total Dose (Max) . . . . . . . . . . . . . . 300krad(SI)
- Latch-Up Immune
• I
PEAK
. . . . . . . . . . . . . . . . . . . . . . . . . . 9A(Min)
• T
F
(C
L
= 10,000pF) . . . . . . . 70ns(Typ); 90ns(Max)
• T
R
(C
L
= 10,000pF) . . . . . 90ns(Typ); 105ns(Max)
• Prop Delay High-Low (C
L
= 10,000pF)
. . . . . . . . . . . . . . . . . . . . 75ns(Max), 55ns(Typ)
• Prop Delay Low-High (C
L
= 10,000pF)
. . . . . . . . . . . . . . . . . . . . 50ns(Max), 30ns(Typ)
• Consistent Delay Times with V
CC
Changes
• Wide Supply Voltage Range . . . . . . . . . 7V to 18V
• Low Stand-by Power Consumption
- Input Low . . . . . . . . . . . . . . . . . . <2mW(Max)
- Inputs High. . . . . . . . . . . . . . . . <18mW(Max)
• ESD Protected . . . . . . . . . . . . . . . . . . . .>1750V
Applications
• Switching Power Supplies
• DC/DC Converters
• Motor Controllers
Pin Configuration
ISL74422ARH-F
(FLATPACK CDFP4-F16)
TOP VIEW
NC
NC
LVS
IN
LGND
NC
NC
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VS
VS
NC
OUT
OUT
NC
NC
GND
April 1, 2010
FN9031.2
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2007, 2010. All Rights Reserved
All other trademarks mentioned are the property of their respective owners
ISL74422ARH
Pin Descriptions
PIN(s)
1, 2, 6, 7, 10, 11,
14
3
4
5
8, 9
12, 13
15, 16
SYMBOL
NC
LVS
IN
LGND
GND
OUT
VS
NO Connect.
Provides the supply voltage for the control logic. It is not internally connected to Pins
15 and 16 for noise immunity purposes, but may be connected externally.
Input voltage to the driver.
Control logic return. It is not internally connected to Pins 8 and 9 for noise immunity
purposes, but may be connected externally.
Pins must be connected to GND.
Pins must be connected to output.
Pins must be connected to VS.
DESCRIPTION
Ordering Information
ORDERING NUMBER
5962F0152101VXC
5962F0152101QXC
5962F0152101V9A
ISL74422ARHF/PROTO
ISL74422ARHY/SAMPLE
PART NUMBER
(Note)
ISL74422ARHVF
ISL74422ARHQF
ISL74422ARHVX
ISL74422ARHF/PROTO
ISL74422ARHY/SAMPLE
ISL7 4422ARHF /PROTO
PART MARKING
Q5962F01 52101VXC
Q5962F01 52101QXC
TEMP. RANGE
(°C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
PACKAGE
(RoHS COMPLIANT)
16 LD Flatpack
16 LD Flatpack
DIE
16 LD Flatpack
DIE SAMPLE
NOTE: These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS
compliant and compatible with both SnPb and Pb-free soldering operations.
2
FN9031.2
April 1, 2010
ISL74422ARH
Die Characteristics
DIE DIMENSIONS:
3838µm x 4829µm (151.1 mils x 190.1mils)
Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ± 1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ ± 2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
30
Metallization Mask Layout
ISL74422ARH
LGND
IN
LVCC
PGND
PVCC
OUT2
OUT1
For additional products, see
www.intersil.com/product_tree
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted
in the quality certifications found at
www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications
at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by
Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any
infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any
patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see
www.intersil.com
3
FN9031.2
April 1, 2010
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