BRT11/ 12/ 13
Vishay Semiconductors
Optocoupler, Phototriac Output
Features
• I
TRMS
= 300 mA
• High Static dV
crq
/dt < 10,000 V/µs
• Electrically Insulated between Input
e3
and output circuit
• Microcomputer compatible - Very Low Trigger
Current
• Non-zero voltage detectors High input Sensitivity
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A 1
C 2
NC 3
6 MT2
5 NC
4 MT1
i179041
Agency Approvals
• UL1577, File No. E52744 System Code J
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Order Information
Part
BRT12-F
BRT11-H
BRT12-H
BRT13-H
BRT11-M
BRT12-M
BRT13-M
BRT12-F-X006
Remarks
600 V V
DRM
, 1.2 mA I
FT
, DIP-6
400 V V
DRM
, 2 mA I
FT
, DIP-6
600 V V
DRM
, 2 mA I
FT
, DIP-6
800 V V
DRM
, 2 mA I
FT
, DIP-6
400 V V
DRM
, 3 mA I
FT
, DIP-6
600 V V
DRM
, 3 mA I
FT
, DIP-6
800 V V
DRM
, 3 mA I
FT
, DIP-6
600 V V
DRM
, 1.2 mA I
FT
, DIP-6 400 mil
(option 6)
600 V V
DRM
, 1.2 mA I
FT
, DIP-6 400 mil
(option 7)
600 V V
DRM
, 2 mA I
FT
, DIP-6 400 mil
(option 6)
600 V V
DRM
, 2 mA I
FT
, SMD-6 (option 7)
600 V V
DRM
, 2 mA I
FT
, SMD-6 (option 9)
800 V V
DRM
, 2 mA I
FT
, DIP-6 400 mil
(option 6)
800 V V
DRM
, 2 mA I
FT
, SMD-6 (option 7)
800 V V
DRM
, 2 mA I
FT
, SMD-6 (option 9)
600 V V
DRM
, 3 mA I
FT
, DIP-6 400 mil
(option 6)
Applications
Industrial controls
Office equipment
Consumer appliances
Description
The BRT11/12/13 are AC optocouplers non-zero volt-
age detectors consisting of two electrically insulated
lateral power ICs which integrate a thyristor system, a
photo detector and noise suppression at the output
and an IR GaAs diode input.
BRT12-F-X007
BRT12-H-X006
BRT12-H-X007
BRT12-H-X009
BRT13-H-X006
BRT13-H-X007
BRT13-H-X009
BRT12-M-X006
For additional information on the available options refer to
Option Information.
Document Number 83689
Rev. 1.4, 11-Apr-05
www.vishay.com
1
BRT11/ 12/ 13
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
Forward continuous current
Surge forward current
Power dissipation
t
≤
10
µs
Test condition
Symbol
V
R
I
F
I
FSM
P
diss
Value
6
20
1.5
30
Unit
V
mA
A
mW
Output
Parameter
Repetitive peak off-state voltage
Test condition
Part
BRT11
BRT12
BRT13
RMS on-state current
Single cycle surge current
Power dissipation
50 Hz
Symbol
V
DRM
V
DRM
V
DRM
I
TRMS
I
TSM
P
diss
Value
400
600
800
300
3
600
Unit
V
V
V
mA
A
mW
Coupler
Parameter
Max. power dissipation
Ambient temperature
Storage temperature
Insulation test voltage
1)
between input/output circuit
(climate in acc. with DIN 40046,
part 2, Nov. 74)
Reference voltage in acc. with
VDE 0110 b
Reference voltage in acc. with
VDE 0110 b (insulation group C)
Creepage resistance (in acc.
with DIN IEC 112/VDE 0303,
part 1)
Insulation resistance
(group IIIa acc. to DIN VDE
0109)
V
IO
= 500 V, T
amb
= 25 ° C
V
IO
= 500 V, T
amb
= 100 ° C
DIN humidity category,
DIN 40 040
Creepage distance
(input/output circuit)
Clearance (input/output circuit)
1)
Test condition
Symbol
P
tot
T
amb
T
stg
V
ISO
Value
630
- 40 to + 100
- 40 to + 150
5300
Unit
mW
°C
°C
V
RMS
V
ref
V
ref
CTI
500
600
175
V
RMS
V
DC
R
IO
R
IO
≥
10
12
≥
10
11
F
≥
7.2
≥
7.2
Ω
Ω
mm
mm
Test AC voltage in acc. with DIN 57883, June 1980
www.vishay.com
2
Document Number 83689
Rev. 1.4, 11-Apr-05
BRT11/ 12/ 13
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Thermal resistance
2)
junction - ambient
2)
Test condition
I
F
= 10 mA
V
R
= 6 V
Symbol
V
F
I
R
R
thja
Min
Typ.
1.1
Max
1.35
10
750
Unit
V
µA
°C/W
Static air, SITAC soldered in pcb or base plate.
Output
Parameter
Critical rate of rise of off-state
voltage
Critical rate of rise of voltage at
current commutation
Test condition
V
D
= 0.67 V
DRM
, T
J
= 25 °C
V
D
= 0.67 V
DRM
, T
J
= 80 °C
V
D
= 0.67 V
DRM
, T
J
= 25 °C,
dI/dt
crq
≤
15 A/ms
V
D
= 0.67 V
DRM
, T
J
= 80 °C,
dI/dt
crq
≤
15 A/ms
Critical rate of rise of on-state
current
Pulse current
On-state voltage
Off-state current
Holding current
Thermal resistance
2)
junction -
ambient
2)
Symbol
dV/dt
cr
dV/dt
cr
dV/dt
crq
dV/dt
crq
dI/dt
cr
Min
10
5
10
5
8
Typ.
Max
Unit
kV/µs
kV/µs
kV/µs
kV/µs
A/µs
t
p
≤
5
µs,
f 0 100 Hz,
dI
tp
/dt
≤
8 A/µs
I
T
= 300 mA
T
C
= 80 °C, V
DRM
V
D
= 10 V
R
thJA
I
tp
V
T
I
D
I
H
R
thja
0.5
80
2
2.3
100
500
125
A
V
µA
µA
°C/W
Static air, SITAC soldered in pcb or base plate.
Coupler
Parameter
Trigger current
Test condition
V
D
= 10 V, F - Versions
V
D
= 10 V, H - Versions
V
D
= 10 V, M - Versions
Trigger current temperature
gradient
Capacitance (input-output)
V
R
= 0 V, f = 1 kHz
Symbol
I
FT
I
FT
I
FT
∆I
FT
/∆T
j
C
IO
0.4
0.8
7
Min
Typ.
Max
1.2
2
3
14
2
Unit
mA
mA
mA
µA/°C
pF
Document Number 83689
Rev. 1.4, 11-Apr-05
www.vishay.com
3
BRT11/ 12/ 13
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
t
gd
=f(I
F
/I
FT25°C
)
V
D
=200V
IFTN=f(tpIF)
IFTN normalized to IFT refering
to tpIF
≥
1 m
Vop=220V,f= 4 0 ...60Hz typ.
17239
17242
Figure 1. Typical Trigger Delay Time
Figure 4. Pulse Trigger Current
P
tot= (I
TRMS
)
I
F
=
ƒ(
V
F
)
17240
17243
Figure 2. Power Dissipation 40 to 60 Hz Line Operation
Figure 5. Typical Input Characteristics
I
D
=f(T
j
)
V
D
=800V
I
T
=
ƒ(
V
T
)
17241
17244
Figure 3. Typical Off-State Current
Figure 6. Typical Output Characteristics
www.vishay.com
4
Document Number 83689
Rev. 1.4, 11-Apr-05
BRT11/ 12/ 13
Vishay Semiconductors
ITRMS =
ƒ(TA)
RthJA = 125 K/W 3)
I
TRMS
=
ƒ(
T
PIN5
)
RthJ-PIN5 = 16,5 K/W 4)
17245
17246
Figure 7. Current Reduction
Figure 8. Current Reduction
Package Dimensions in Inches (mm)
3
.248 (6.30)
.256 (6.50)
2
1
pin one ID
ISO Method A
4
5
6
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
.048 (1.22)
.052 (1.32)
.130 (3.30)
.150 (3.81)
18°
.033 (0.84) typ.
.033 (0.84) typ.
.100 (2.54) typ
3°–9°
.008 (.20)
.012 (.30)
.300–.347
(7.62–8.81)
.130 (3.30)
.150 (3.81)
.300 (7.62)
typ.
4°
typ .
.018 (0.46)
.020 (0.51)
i178014
Document Number 83689
Rev. 1.4, 11-Apr-05
www.vishay.com
5
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