CMPD3003
CMPD3003A
CMPD3003C
CMPD3003S
SURFACE MOUNT
LOW LEAKAGE
SILICON SWITCHING DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD3003 series
types are silicon switching diodes manufactured by the
epitaxial planar process, designed for switching appli-
cations requiring an extremely low leakage diode.
SOT-23 CASE
The following configurations are available:
CMPD3003
SINGLE
CMPD3003A DUAL, COMMON ANODE
CMPD3003C DUAL, COMMON CATHODE
CMPD3003S DUAL, IN SERIES
MAXIMUM RATINGS:
(TA=25°C)
Continuous Reverse Voltage
Average Forward Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0µs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
MARKING
MARKING
MARKING
MARKING
SYMBOL
VR
IO
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ
JA
CODE:
CODE:
CODE:
CODE:
LLO
LLA
LLC
LLS
UNITS
180
200
600
700
2.0
1.0
V
mA
mA
mA
A
A
mW
°C
°C/W
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IR
VR=125V
1.0
IR
IR
IR
BVR
VF
VF
VF
VF
VF
VF
CT
VR=125V, TA=150°C
VR=180V
VR=180V, TA=150°C
IR=5.0µA
IF=1.0mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
IF=300mA
VR=0, f=1.0MHz
200
0.62
0.72
0.80
0.83
0.87
0.90
0.72
0.83
0.89
0.93
1.10
1.15
4.0
3.0
10
5.0
UNITS
nA
µA
nA
µA
V
V
V
V
V
V
V
pF
R4 (25-January 2010)
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