®
74VCXH162244
LOW VOLTAGE CMOS 16-BIT BUFFER (3-STATE)
WITH 3.6V TOLERANT INPUTS AND OUTPUTS
PRELIMINARY DATA
s
s
s
s
s
s
s
s
s
s
3.6V TOLERANT INPUTS AND OUTPUTS
HIGH SPEED:
t
PD
= 3.4 ns (MAX.) at V
CC
= 3.0 to 3.6V
t
PD
= 3.8 ns (MAX.) at V
CC
= 2.3 to 2.7V
POWER-DOWN PROTECTION ON INPUTS
AND OUTPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 12 mA (MIN) at V
CC
= 3.0V
|I
OH
| = I
OL
= 8 mA (MIN) at V
CC
= 2.3V
26Ω SERIE RESISTORS IN OUTPUTS
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2.3V to 3.6V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 16244
BUS HOLD PROVIDED ON DATA INPUTS
LATCH-UP PERFORMANCE EXCEEDS 300mA
ESD PERFORMANCE:
HBM >2000V; MM > 200V
T
(TSSOP48 Package)
ORDER CODES :
74VCXH162244T
PIN CONNECTION
DESCRIPTION
The 74VCXH162244 is a low voltage CMOS
16-BIT BUS BUFFER (INVERTED) fabricated
with sub-micron silicon gate and five layer metal
wiring C
2
MOS technology. It is ideal for low
power and very high speed 2.3 to 3.6V
applications; it can be interfaced to 3.6V signal
enviroment for both inputs and outputs.
Any nG control output governs four BUS
BUFFERS. Output Enable input (nG) tied
together gives full 16-bit operation.
When nG is LOW, the outputs are on. When nG
is HIGH, the output are in high impedance state.
This device is designed to be used with 3 state
memory address drivers, etc. Bus hold on data
inputs is provided in order to eliminate the need
for external pull-up or pull-down resistor.
The device circuits is including 26Ω series
resistance in the outputs. These resistors permit
to reduce line noise in high speed applications
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
February 1999
1/9
74VCXH162244
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1
2, 3, 5, 6
8, 9, 11, 12
13, 14, 16, 17
19, 20, 22, 23
24
25
30, 29, 27, 26
36, 35, 33, 32
41, 40, 38, 37
47, 46, 44, 43
48
4,10, 15, 21,
28, 34, 39, 45
7, 18, 31, 42
SYMBOL
1G
1Y1 to 1Y4
2Y1 to 2Y4
3Y1 to 3Y4
4Y1 to 4Y4
4G
3G
4A1 to 4A4
3A1 to 3A4
2A1 to 2A4
1A1 to 1A4
2G
GND
V
CC
NAME AND FUNCT ION
Output Enable Input
Data Outputs
Data Outputs
Data Outputs
Data Outputs
Output Enable Input
Output Enable Input
Data Inputs
Data Inputs
Data Inputs
Data Inputs
Output Enable Input
Ground (0V)
Positive Supply Voltage
IEC LOGIC SYMBOLS
TRUTH TABLE
INPUT
G
L
L
H
X:”H” or ”L”
Z: High impedance
OUTPUT
An
L
H
X
Yn
L
H
Z
2/9
74VCXH162244
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
V
O
I
IK
I
OK
I
O
I
CC
orI
GND
P
D
T
stg
T
L
Supply Voltage
DC Input Voltage
DC Output Voltage (OFF state)
DC Output Voltage (High or Low State) (note1)
DC Input Diode Current
DC Output Diode Current (note2)
DC Output Source/Sink Current
DC V
CC
or Ground Current Per Supply Pin
Power Dissipation
Storage Temperature
Lead Temperature (10 sec)
Parameter
Value
-0.5 to + 4.6
-0.5 to + 4.6
-0.5 to + 4.6
-0.5 to V
CC
+ 0.5
- 50
±
50
±
50
±
100
400
-65 to +150
300
Unit
V
V
V
V
mA
mA
mA
mA
mW
o
o
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
1) I
O
absolute maximum rating must be observed
2) V
O
< GND, V
O
> V
CC
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
V
O
I
OH
, I
OL
I
OH
, I
OL
T
op
dt/dv
Supply Voltage
Input Voltage
Output Voltage (OFF state)
Output Voltage (High or Low State)
High or Low Level Output Current (V
CC
= 3.0 to 3.6V)
High or Low Level Output Current (V
CC
= 2.3 to 2.7V)
Operating Temperature:
Input Transition Rise or Fall Rate (V
CC
= 3.0V) (note 1)
Parameter
Value
2.3 to3.6
-0.3 to 3.6
0 to 3.6
0 to V
CC
±
12
±
8
-40 to+85
0 to 10
Unit
V
V
V
V
mA
mA
o
C
ns/V
1) V
IN
from0.8V to 2.0V, V
CC
= 3.0V
3/9
74VCXH162244
DC SPECIFICATIONS
(2.7V < V
CC
≤
3.6V unless otherwise specified)
Symb ol
Parameter
V
CC
(V)
V
IH
V
IL
V
OH
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
2.7 to 3.6
2.7 to 3.6
2.7
3.0
3.0
V
OL
Low Level Output Voltage
2.7 to 3.6
2.7
3.0
3.0
I
I
I
I(HOLD)
Input Leakage Current
Input Hold Current
2.7 to 3.6
3
3.6
I
OZ
I
off
I
CC
∆
I
CC
3 State Output Leakage Current
Power Off Leakage Current
Quiescent Supply Current
ICC incr. per input
2.7 to 3.6
0
2.7 to 3.6
2.7 to 3.6
V
I
= V
IH
or V
IL
V
I
= V
IH
or V
IL
I
O
=-100
µA
I
O
=-6 mA
I
O
=-8 mA
I
O
=-12 mA
I
O
=100
µA
I
O
=6 mA
I
O
=8 mA
I
O
=12 mA
V
I
= V
CC
orGND
V
I
= 0.8 V
V
I
= 2 V
V
I
= 0 to 3.6 V
V
I
= V
IH
orV
IL
V
O
= 0 to 3.6V
V
I
orV
O
= 0 to 3.6V
V
I
= V
CC
orGND
V
I
orV
O
= V
CC
to 3.6 V
V
IH
= V
CC
-0.6V
75
-75
±500
±
10
10
20
±
20
750
µ
A
µA
µ
A
µ
A
Test Co nditi ons
Value
-40 to 85 C
Min.
2.0
0.8
V
CC
-0.2
2.2
2.4
2.2
0.2
0.4
0.55
0.8
±
5
µ
A
µ
A
V
V
Max.
V
V
o
Un it
DC SPECIFICATIONS
(2.3V < V
CC
≤
2.7V unless otherwise specified)
Symb ol
Parameter
V
CC
(V)
V
IH
V
IL
V
OH
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
2.3 to 2.7
2.3 to 2.7
2.3
2.3
2.3
V
OL
Low Level Output Voltage
2.3 to 2.7
2.3
2.3
I
I
I
I(HOLD)
I
OZ
I
off
I
CC
Input Leakage Current
Input Hold Current
3 State Output Leakage Current
Power Off Leakage Current
Quiescent Supply Current
2.3 to 2.7
2.3
2.3 to 2.7
0
2.3 to 2.7
V
I
= V
IH
or V
IL
V
I
= V
IH
or V
IL
I
O
=-100
µ
A
I
O
=-4 mA
I
O
=-6 mA
I
O
=-8 mA
I
O
=100
µ
A
I
O
=6 mA
I
O
=8 mA
V
I
= V
CC
orGND
V
I
= 0.7 V
V
I
= 1.7 V
V
I
= V
IH
orV
IL
V
O
= 0 to 3.6V
V
I
orV
O
= 0 to 3.6V
V
I
= V
CC
orGND
V
I
orV
O
= V
CC
to 3.6 V
4/9
45
-45
±
10
10
20
±
20
µ
A
µA
µ
A
Test Co nditi ons
Value
-40 to 85 C
Min.
1.6
0.7
V
CC
-0.2
2.0
1.8
1.7
0.2
0.4
0.6
±
5
µ
A
µ
A
V
V
Max.
V
V
o
Un it
74VCXH162244
DYNAMIC SWITCHING CHARACTERISTICS
(T
a
= 25
o
C, Input t
r
= t
f
= 2.0ns, C
L
= 30pF, R
L
= 500Ω)
Symb ol
Parameter
V
CC
(V)
V
OLP
V
OLV
V
OHV
Dynamic Low Voltage Quiet Output
(note 1, 3)
Dynamic Low Voltage Quiet Output
(note 1, 3)
Dynamic High Voltage Quiet Output
(note 2, 3)
2.5
3.3
2.5
3.3
2.5
3.3
V
IL
= 0 V
V
IH
= V
CC
V
IL
= 0 V
V
IH
= V
CC
V
IL
= 0 V
V
IH
= V
CC
Test Con dition s
Min .
Value
T
A
= 25 C
T yp.
0.25
0.35
-0.25
-0.35
2.05
2.65
Max.
V
V
V
o
Un it
1) Number ofoutputs defined as ”n”. Measured with”n-1” outputs switching from HIGH to LOW or LOW t o HIGH. The remaining output is measured in
the LOW state.
2) Number ofoutputs defined as ”n”. Measured with”n-1” outputs switching from HIGH to LOW or LOW t o HIGH. The remaining output is measured in
the HIGH state.
3) Parameters guaranteed by design.
AC ELECTRICAL CHARACTERISTICS
(C
L
= 30 pF, R
L
= 500
Ω,
Input t
r
= t
f
= 2.0 ns)
Symb ol
Parameter
V
CC
(V)
t
PLH
t
PHL
t
PZL
t
PZH
t
PLZ
t
PHZ
t
OSLH
t
OSHL
Propagation Delay Time
Output Enable Time
Output Disable Time
Output to Output Skew Time (note 1, 2)
Test Con dition
Waveform
Value
-40 to 85
o
C
Min.
1.0
0.8
1.0
0.8
1.0
0.8
Max.
3.8
3.4
5.1
3.8
4.0
3.6
0.5
0.5
Un it
2.3 to 2.7
3.0 to 3.6
2.3 to 2.7
3.0 to 3.6
2.3 to 2.7
3.0 to 3.6
2.3 to 2.7
3.0 to 3.6
1
2
2
ns
ns
ns
ns
1) Skew is defined as the absolute value of the difference between the actual propagation delay for any twooutputs of the same device switching in the
same direction, either HIGH or LOW (t
OSLH
= |t
PLHm
- t
PLHn
|, t
OSHL
= |t
PHLm
- t
pHLn
|)
2) Parameter guaranteed by design
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
V
CC
(V)
C
IN
C
OUT
C
PD
Input Capacitance
Output Capacitance
Power Dissipation Capacitance (note 1)
2.5 or 3.3
2.5 or 3.3
2.5 or 3.3
V
IN
= 0V or V
CC
V
IN
= 0V or V
CC
f
IN
= 10MHz
V
IN
= 0V or V
CC
Test Co nditi ons
Min.
Valu e
T
A
= 25 C
T yp.
6
7
20
Max.
pF
pF
pF
o
Un it
1) C
PD
isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. Average
operting current can be obtained by the following equation. I
CC
(opr) = C
PD
•
V
CC
•
f
IN
+ I
CC
/16 (per circuit)
5/9
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