,
Li
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
®
IRFF11O
IRFF1TI
IRFFT13
IM-CHANIMEL
100 Volt, 0.60 Ohm HEXFET®
Features:
• Fast Switching
• Low Drive Current
• Ease of Paralleling
• No Second Breakdown
a Excellent Temperature Stability
Product Summary
Part Number
IRFF110
IRFF111
IRFF112
IRFF113
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, freedom from second breakdown, very fast
switching, ease of paralleling, and temperature sta-
bility of the electrical parameters.
They are well suited for applications such as switching
Dower supplies, motor controls, inverters, choppers,
audio amplifiers, and high energy pulse circuits.
VDS
100V
60V
R
DS(on)
ID
3.5A
3.5A
3.0A
3.0A
o.en
0.6S7
100V
60V
o.sn
o.sn
0 6 6 10 0341
112100261
CASE STYLE AND DIMENSIONS
•— DIA— *•
2510325)
«-DlA-«H
0.4SIC018I
4 5 7 (0.1801
4 0 6 ( 0 160]
me 10 oi4>
4.57 (0.180) MAX.
14
22
' 0 5 6 .
12 7 0 ( 0 5 0 )
!
11
13.03
D. 7 11
REF.
DM 10 02II
0.41 10.016] "'
3 PLACES
/
Conforms to JEDEC Outline TO-20SAF ITO-39)
Dimensions in Millimeters and (Inches)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
\ Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
^>«%; /"^ . J. i—
IRFF110, IRFF111, IRFF112, IRFF113 Devices
in Diode Ratings and Characteristics
Ig
Continuous Source Current
(Bodv Diode)
IRFF110
IRFF11 1
IRFF112
IRFF113
IRFF110
IRFF111
IRFF112
IRFF113
IRFF110
IRFF111
IRFF112
IRFF113
ALL
ALL
ALL
-
-
-
-
-
-
-
-
-
-
-
-
-
200
1.0
3.5
3.0
14
A
A
A
Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier.
(
SM
Pulse Source Current
(Body Diode} Q)
12
2.5
2.0
A
V
V
VSQ
Diode Forward Voltage (2)
T
c
« 25°C. l
s
« 3.5A, V
QS
- 0V
T
C
- 2 5 ° C . I
S
= 3 . 0 A , V
G S
= OV
Tj = 150°C. Ip = 3.5A,dlp/dt = 100A/,jS
Tj = 150°C. Ip = 3.5A,dl
F
/dt = 100A/ns
t
rr
QRR
t
on
Reverse Recovery Time
Reverse Recovered Charge
Forward Turn-on Time
ns
J.C
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg -t- LQ.
' Repetitive Rating: Pulse width limited
by max. junction temperature.
See Transient Thermal Impedance Curve (Fig. 5).
©Tj = 25°Cto150°C.
® Pulse Test: Pulse width* 300^s, Duty Cycle < 2%.
能源基础设施
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