电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

IS61C1024H-25K

产品描述Standard SRAM, 128KX8, 25ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
产品类别存储    存储   
文件大小123KB,共10页
制造商Integrated Silicon Solution ( ISSI )
下载文档 详细参数 选型对比 全文预览

IS61C1024H-25K概述

Standard SRAM, 128KX8, 25ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

IS61C1024H-25K规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Integrated Silicon Solution ( ISSI )
零件包装代码SOJ
包装说明0.400 INCH, PLASTIC, SOJ-32
针数32
Reach Compliance Codecompliant
ECCN代码EAR99
最长访问时间25 ns
其他特性LOW POWER STANDBY MODE
I/O 类型COMMON
JESD-30 代码R-PDSO-J32
JESD-609代码e0
长度20.955 mm
内存密度1048576 bit
内存集成电路类型STANDARD SRAM
内存宽度8
湿度敏感等级3
功能数量1
端子数量32
字数131072 words
字数代码128000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织128KX8
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码SOJ
封装等效代码SOJ32,.44
封装形状RECTANGULAR
封装形式SMALL OUTLINE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源5 V
认证状态Not Qualified
座面最大高度3.683 mm
最大待机电流0.05 A
最小待机电流4.5 V
最大压摆率0.18 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式J BEND
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度10.16 mm
Base Number Matches1

文档预览

下载PDF文档
IS61C1024H
128K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access time: 15, 20, 25 ns
Low active power: 750 mW (typical)
Low standby power: 2 mW (typical) CMOS
standby
• Output Enable (
OE
) and two Chip Enable
(
CE1
and CE2) inputs for ease in applications
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
IS61C1024H
ISSI
ISSI
®
®
JANUARY 1996
DESCRIPTION
The
ISSI
IS61C1024H is a very high-speed, low power,
131,072-word by 8-bit CMOS static RAM. They are fabricated
using
ISSI
's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design tech-
niques, yields higher performance and low power consump-
tion devices.
When
CE1
is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs,
CE1
and CE2. The active LOW Write Enable (
WE
)
controls both writing and reading of the memory.
The IS61C1024H is available in 32-pin 300-mil and 400-mil
plastic SOJ packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
512 X 2048
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE1
CE2
OE
WE
CONTROL
CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. © Copyright 1995, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc.
Rev. A 1/96
SR81995C024
1

IS61C1024H-25K相似产品对比

IS61C1024H-25K IS61C1024H-20K IS61C1024H-20J IS61C1024H-15J IS61C1024H-15K IS61C1024H-25J
描述 Standard SRAM, 128KX8, 25ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, 0.300 INCH, PLASTIC, SOJ-32 Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.300 INCH, PLASTIC, SOJ-32 Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 Standard SRAM, 128KX8, 25ns, CMOS, PDSO32, 0.300 INCH, PLASTIC, SOJ-32
是否无铅 含铅 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
零件包装代码 SOJ SOJ SOJ SOJ SOJ SOJ
包装说明 0.400 INCH, PLASTIC, SOJ-32 0.400 INCH, PLASTIC, SOJ-32 0.300 INCH, PLASTIC, SOJ-32 0.300 INCH, PLASTIC, SOJ-32 0.400 INCH, PLASTIC, SOJ-32 0.300 INCH, PLASTIC, SOJ-32
针数 32 32 32 32 32 32
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B EAR99
最长访问时间 25 ns 20 ns 20 ns 15 ns 15 ns 25 ns
其他特性 LOW POWER STANDBY MODE LOW POWER STANDBY MODE LOW POWER STANDBY MODE LOW POWER STANDBY MODE LOW POWER STANDBY MODE LOW POWER STANDBY MODE
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PDSO-J32 R-PDSO-J32 R-PDSO-J32 R-PDSO-J32 R-PDSO-J32 R-PDSO-J32
JESD-609代码 e0 e0 e0 e0 e0 e0
长度 20.955 mm 20.955 mm 20.955 mm 20.955 mm 20.955 mm 20.955 mm
内存密度 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 8 8 8 8 8 8
湿度敏感等级 3 3 3 3 3 3
功能数量 1 1 1 1 1 1
端子数量 32 32 32 32 32 32
字数 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
字数代码 128000 128000 128000 128000 128000 128000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOJ SOJ SOJ SOJ SOJ SOJ
封装等效代码 SOJ32,.44 SOJ32,.44 SOJ32,.34 SOJ32,.34 SOJ32,.44 SOJ32,.34
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 5 V 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 3.683 mm 3.683 mm 3.556 mm 3.556 mm 3.683 mm 3.556 mm
最大待机电流 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
最小待机电流 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
最大压摆率 0.18 mA 0.19 mA 0.19 mA 0.22 mA 0.22 mA 0.18 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 J BEND J BEND J BEND J BEND J BEND J BEND
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 10.16 mm 10.16 mm 7.62 mm 7.62 mm 10.16 mm 7.62 mm
Base Number Matches 1 1 1 1 1 1

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1080  352  2021  1929  2437  12  53  23  3  46 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved