MA4E2054L-1261
Low Barrier Schottky Chip
Features
•
Low I
R
(<100nA @ 1V, <500nA @ 3V)
•
Designed for High Volume, Low Cost Detector
and Mixer Applications
•
Low Noise Figure: 5.7 dB (SSB) at X-Band
•
High Detector Sensitivity: -55 dBm TSS
•
Low Capacitance: 0.14 pF (typ.)
•
Low 1/F Noise
•
RoHS* Compliant
M/A-COM Products
Rev. V7
Single Junction Chip Outline
MA4E2054
Typ.
0.014”
0.36
Description and Applications
The MA4E2054L-1261 diode is a low barrier, n-type,
silicon Schottky device. It is useful as a high
performance mixer or detector diode at frequencies
from VHF through X-band. These chips can be
used in automatic assembly processes due to their
0.004” gold bond pads and sturdy construction.
Typ.
0.014”
0.36
Maximum Ratings
Parameter
Operating Temperature
Storage Temperature
Incident RF Power (CW)
Reverse Voltage @ 25 °C
Forward Current
ESD Rating
1.
2.
2
Symbol Unit
T
OP
T
STG
P
T
V
R
I
F
-
°C
°C
mW
V
mA
-
Values
-65 to +150
-65 to +150
75
1
3
20
Class 0
Typ.
0.004”
0.10
inches
mm
At 25 °C case temperature, Derate linearly to zero watts at
150 °C case temperature.
Human Body Model
Typical RF Performance @ +25 °C
Parameter
Mixer Noise Figure
3
IF Impedance
Tangential Signal
Sensitivity
4
Conditions
f = 9.375 GHz
LO = 0 dBm
I
F
= 30 MHz
I
F
= 20 mA
BW = 2 MHz
Video NF = 1.5 dB
R
L
= 100K Ohms
I
F
= 20
μA
R
L
= 1M Ohm
Zero Bias
Typical
5.7 dB
(SSB)
200 ohms
-55 dBm
Electrical Specifications @ +25 °C
Parameter
Breakdown Voltage
Reverse Leakage Current
Reverse Leakage Current
Condition
I
R
= 10
μA
V
R
= 1 V
V
R
= 3 V
V
R
= 0 V
f = 1 MHz
I
F
= 10 mA
I
F
= 1 mA
26
I
F
(in mA)
Symbol Specification
V
B
I
R
I
R
C
T
R
D
V
F
3.0 V min.
100 nA max.
500 nA max.
Total Capacitance
Dynamic Resistance
2
Forward Voltage
2. R
D
= R
S
+ R
J
where R
J
=
1
0.16 pF max.
17 Ohms max.
250 mV min.
350 mV min.
Detector Output, Voltage
at -30 dBm
4
Detector Output
Voltage at -30 dBm
4
20 mV
20 mV
3. Fixture tuned to 9.375 GHz.
4. Fixture tuned to 2.5 GHz. See figures on page 3 for untuned
fixture performance.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
MA-COM Technical Solutions and its affiliates reserve the right to make changes to
volume is not guaranteed.
the product(s) or information contained herein without notice.
MA4E2054L-1261
Low Barrier Schottky Chip
Circuit Model (Chip)
0.06 pF
M/A-COM Products
Rev. V7
Spice Model Parameters
IS = 3 x 10-
8
A
RS = 11Ω
N = 1.05
TT = 0 S
C
T
= 0.13 x 10 -
12
pF
VJ = 0.40 V
M = 0.50
EG = 0.69 eV
BV = 5.0 V
IBV = 1 x 10 -
5
A
RS
RJ
11Ω
Recommended Assembly:
0.04 pF
1. One mil diameter gold wire
2. Ball bond
3. Conductive silver epoxy for die mounting
Typical Performance Curves @ +25°C
Forward Current vs. Forward Voltage
and Temperature
10
Detector Output Voltage vs Input Power and Load
Resistance. Diode Forward Biased at 20
μ
A.
Untuned Fixture at 9.375 GHz
10000
1000
V
OUT
(mV)
1
I
F
(mA)
+125 C
o
100
10
- - - - - - 10k ohms
1
0.1
________
__ __ __
0.1
25
o
C
-50
o
C
0.01
0
50
100
150
200
250
300
V
F
(mV)
350
400
450
500
1M ohm
5k ohms
0.01
-50
-40
-30
-20
-10
0
10
20
INPUT PO W ER (dBm)
Tuned Fixture Noise Figure vs. Lo Power at 9.375
GHz
9
NOISE FIGURE (dB)
8
7
6
5
4
3
0.01
Detector Output Voltage vs Input Power and Load
Resistance. Diode at Zero Bias. Untuned Fixture at
9.375 GHz
10000
1000
V
OUT
(mV)
100
10
1
__ __ __
- - - - - - 1M ohm
________
100k ohms
10k ohms
5k ohms
0
10
0.1
0.01
0.1
LO PO W ER (mW)
1
10
__ . . __ . .
-40
-30
-20
-10
INPUT PO W ER (dBm)
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Visit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
MA-COM Technical Solutions and its affiliates reserve the right to make changes to
volume is not guaranteed.
the product(s) or information contained herein without notice.
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