PD - 95397
HEXFET
®
Power MOSFET
Generation V Technology
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Ultra Low On-Resistance
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Dual N and P Channel MOSFET
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Very Small SOIC Package
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Low Profile (<1.1mm)
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Available in Tape & Reel
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Fast Switching
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Lead-Free
Description
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S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
3
4
7
6
5
IRF7509PbF
D1
D1
D2
D2
N-Ch
P-Ch
V
DSS
30V
-30V
P-CHANNEL MOSFET
Top View
R
DS(on)
0.11Ω 0.20Ω
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
V
GSM
dv/dt
T
J
, T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
N-Channel
30
2.7
2.1
21
Max.
P-Channel
-30
-2.0
-1.6
-16
Units
V
A
W
W
mW/°C
V
V
V/ns
°C
1.25
0.8
10
± 20
30
5.0
-55 to + 150
240 (1.6mm from case)
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
100
Units
°C/W
www.irf.com
1
6/15/04
IRF7509PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
30
-30
1.0
-1.0
1.9
0.92
Typ. Max.
0.059
-0.039
0.09 0.110
0.14 0.175
0.17 0.20
0.30 0.40
1.0
-1.0
25
-25
±100
7.8 12
7.5 11
1.2 1.8
1.3 1.9
2.5 3.8
2.5 3.7
4.7
9.7
10
12
12
19
5.3
9.3
210
180
80
87
32
42
Units
V
V/°C
Ω
V
S
µA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= 1.7A
V
GS
= 4.5V, I
D
= 0.85A
V
GS
= -10V, I
D
=-1.2A
V
GS
= -4.5V, I
D
=-0.6A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= V
GS
, I
D
= -250µA
V
DS
= 10V, I
D
= 0.85A
V
DS
= -10V, I
D
= -0.6A
V
DS
= 24 V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V
V
DS
= 24 V, V
GS
= 0V, T
J
= 125°C
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= ± 20V
N-Channel
I
D
= 1.7A, V
DS
= 24V, V
GS
= 10V
P-Channel
I
D
= -1.2A, V
DS
= -24V, V
GS
= -10V
N-Channel
V
DD
= 15V, I
D
= 1.7A, R
G
= 6.1Ω,
R
D
= 8.7Ω
P-Channel
V
DD
= -15V, I
D
= -1.2A, R
G
= 6.2Ω,
R
D
= 12Ω
N-Channel
V
GS
= 0V, V
DS
= 25V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -25V, = 1.0MHz
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
ns
pF
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
1.25
-1.25 A
21
-16
1.2
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
V
-1.2
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
40
60
N-Channel
ns
30
45
T
J
= 25°C, I
F
= 1.7A, di/dt = 100A/µs
48
72
P-Channel
nC
T
J
= 25°C, I
F
= -1.2A, di/dt = -100A/µs
37
55
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
N-Channel I
SD
≤
1.7A, di/dt
≤
120A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-1.2A, di/dt
≤
160A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
2
www.irf.com
N - Channel
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
IRF7509PbF
100
I D , Drain-to-Source Current (A)
I D, Drain-to-Source Current (A)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
10
10
1
1
3.0V
3.0V
0.1
0.1
1
20µs PULSE WIDTH
T
J
= 25°C
A
10
0.1
0.1
1
20µs PULSE WIDTH
T
J
= 150°C
A
10
V DS , Drain-to-Source Voltage (V)
V DS Drain-to-Source Voltage (V)
,
Fig 1.
Typical Output Characteristics
100
Fig 2.
Typical Output Characteristics
100
I
D
, Drain-to-Source Current (A)
10
T
J
= 25°C
T
J
= 150°C
I
SD
, Reverse Drain Current (A)
10
T
J
= 150°C
T
J
= 25°C
1
1
0.1
3.0
3.5
4.0
4.5
V
DS
= 10V
20µs PULSE WIDTH
5.0
5.5
6.0
A
0.1
0.4
0.8
1.2
1.6
V
GS
= 0V
A
2.0
V
GS
, Gate-to-Source Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
0.220
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 1.7A
1.5
R
DS (on)
, Drain-to-Source On Resistance
0.180
VGS = 4.5V
0.140
1.0
0.5
0.100
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100 120 140 160
A
0.060
0
2
4
6
8
10
T
J
, Junction Temperature (°C)
I
D
, Drain Current (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
www.irf.com
Fig 6.
Typical On-Resistance Vs. Drain
Current
3
IRF7509PbF
0.140
N - Channel
100
R
DS (on)
, Drain-to-Source On Resistance
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
0.120
10
10us
ID = 2.7A
0.100
100us
1
1ms
0.080
0.060
0
4
8
12
16
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
V
GS
, Gate-to-Source Voltage (V)
100
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
400
Fig 8.
Maximum Safe Operating Area
C, Capacitance (pF)
300
C
iss
C
oss
200
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 1.7A
V
DS
= 24V
V
DS
= 15V
16
12
8
100
C
rss
4
0
1
10
100
A
0
0
2
4
6
FOR TEST CIRCUIT
SEE FIGURE 9
8
10
12
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
4
www.irf.com
P - Channel
10
VGS
TOP
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
IRF7509PbF
10
-ID , Drain-to-Source Current (A)
1
-ID , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
1
-3.0V
-3.0V
0.1
0.1
1
20µs PULSE WIDTH
T
J
= 25°C
A
10
0.1
0.1
1
20µs PULSE WIDTH
T
J
= 150°C
A
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 11.
Typical Output Characteristics
10
Fig 12.
Typical Output Characteristics
10
-I
D
, Drain-to-Source Current (A)
T
J
= 25°C
T
J
= 150°C
-I
SD
, Reverse Drain Current (A)
T
J
= 150°C
T
J
= 25°C
1
1
0.1
3.0
4.0
5.0
V
DS
= -10V
20µs PULSE WIDTH
6.0
7.0
A
0.1
0.4
0.6
0.8
1.0
V
GS
= 0V
1.2
A
1.4
-V
GS
, Gate-to-Source Voltage (V)
-V
SD
, Source-to-Drain Voltage (V)
Fig 13.
Typical Transfer Characteristics
2.0
Fig 14.
Typical Source-Drain Diode
Forward Voltage
R
DS(on)
, Drain-to-Source On Resistance
( Ω )
1.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -1.2A
1.5
1.0
VGS = -4.5V
1.0
0.5
0.5
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= -10V
VGS = -10V
0.0
0
1
-I
100 120 140 160
A
2
3
4
A
T
J
, Junction Temperature (°C)
,
, Drain Current (A)
Fig 15.
Normalized On-Resistance
Vs. Temperature
www.irf.com
Fig 16.
Typical On-Resistance Vs. Drain
Current
5
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