PD 91471B
IRG4PC50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
C
UltraFast CoPack IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.65V
@V
GE
= 15V, I
C
= 27A
n-ch an nel
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
55
27
220
220
25
220
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.24
-----
6 (0.21)
Max.
0.64
0.83
------
40
------
Units
°C/W
g (oz)
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1
12/30/00
IRG4PC50UD
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown VoltageS 600 ---- ----
V
V
GE
= 0V, I
C
= 250µA
V
(BR)CES
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage ---- 0.60 ----
V/°C V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage
---- 1.65 2.0
I
C
= 27A
V
GE
= 15V
---- 2.0 ----
V
I
C
= 55A
See Fig. 2, 5
---- 1.6 ----
I
C
= 27A, T
J
= 150°C
Gate Threshold Voltage
3.0 ---- 6.0
V
CE
= V
GE
, I
C
= 250µA
V
GE(th)
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance
T
16
24
----
S
V
CE
= 100V, I
C
= 27A
Zero Gate Voltage Collector Current
----
---- 250
µA
V
GE
= 0V, V
CE
= 600V
I
CES
----
---- 6500
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop
---- 1.3 1.7
V
I
C
= 25A
See Fig. 13
---- 1.2 1.5
I
C
= 25A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current
----
---- ±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
Typ.
180
25
61
46
25
140
74
0.99
0.59
1.58
44
27
240
130
2.3
13
4000
250
52
50
105
4.5
8.0
112
420
250
160
Max. Units
Conditions
270
I
C
= 27A
38
nC
V
CC
= 400V
See Fig. 8
90
V
GE
= 15V
----
T
J
= 25°C
----
ns
I
C
= 27A, V
CC
= 480V
230
V
GE
= 15V, R
G
= 5.0Ω
110
Energy losses include "tail" and
----
diode reverse recovery.
----
mJ See Fig. 9, 10, 11, 18
1.9
----
T
J
= 150°C, See Fig. 9, 10, 11, 18
----
ns
I
C
= 27A, V
CC
= 480V
----
V
GE
= 15V, R
G
= 5.0Ω
----
Energy losses include "tail" and
----
mJ diode reverse recovery.
----
nH
Measured 5mm from package
----
V
GE
= 0V
----
pF
V
CC
= 30V
See Fig. 7
----
ƒ = 1.0MHz
75
ns
T
J
= 25°C See Fig.
160
T
J
= 125°C
14
I
F
= 25A
10
A
T
J
= 25°C See Fig.
15
T
J
= 125°C
15
V
R
= 200V
375
nC
T
J
= 25°C See Fig.
1200
T
J
= 125°C
16
di/dt 200A/µs
----
A/µs T
J
= 25°C
----
T
J
= 125°C
2
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IRG4PC50UD
40
D u ty c ycl e: 5 0%
T J = 1 25 °C
T sin k = 90 °C
Ga te d rive a s spe cifi ed
Tu rn -on lo sses inclu de
effe cts o f reve rse re cov ery
P o w e r D issipa tion = 4 0 W
30
Loa d C urre nt (A)
20
6 0 % o f rate d
v o lta g e
10
0
0.1
1
10
A
100
f, Freq uen cy (kH z)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
I
C
, C o lle ctor-to-E m itter Cu rre n t (A )
1000
1000
100
I
C
, C ollec to r-to-Em itte r C u rre nt (A)
100
10
T
J
= 1 5 0 °C
T
J
= 1 5 0°C
T
J
= 2 5 °C
1
10
T
J
= 2 5 °C
0.1
0
1
V
GE
= 15V
2 0 µ s P U L S E W ID T H
A
10
1
4
6
8
V
C C
= 1 0 V
5 µ s P U LS E W ID TH
A
10
12
V
C E
, C o lle c to r-to -E m itte r V o lta g e (V )
V
G E
, G a te -to -E m itte r V o lta g e (V )
Fig. 2
- Typical Output Characteristics
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Fig. 3
- Typical Transfer Characteristics
3
IRG4PC50UD
60
50
V
CE
, C olle ctor-to-E m itte r V oltage (V)
V
G E
= 15 V
2.5
M aximum D C Collector Current (A )
V
G E
= 1 5V
8 0 µs P U L S E W ID TH
I
C
= 5 4 A
40
2.0
30
I
C
= 2 7 A
1.5
20
I
C
= 14 A
10
0
25
50
75
100
125
150
1.0
-60
-40
-20
0
20
40
60
80
100 120
A
140 160
T
C
, C ase Tem perature (°C)
T
J
, Ju n c tio n Te m p e ra tu re (°C )
Fig. 4
- Maximum Collector Current vs.
Temperature
Case
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
T h e rm a l R e s p o n se (Z
thJ C
)
D = 0 .5 0
0 .2 0
0 .1
0 .1 0
0 .0 5
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
N ote s :
1 . D u ty f ac t or D = t
1
/t
2
P
D M
t
1
t
2
0 .0 2
0 .0 1
0 .0 1
0 .0 0 0 0 1
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
t
1
, R e c ta n g u la r P u ls e D ura tio n (s e c )
Fig. 6
- Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC50UD
8000
20
V
G E
, Gate-to-Emitter Voltage (V)
V
GE
C
ie s
C
re s
C
oes
=
=
=
=
0V ,
f = 1M Hz
C
ge
+ C
gc
, C
ce
SH O R TED
C
gc
C
ce
+ C
gc
V
C E
= 400V
I
C
= 27A
16
C, Capacitance (pF)
6000
C
ie s
12
4000
C
oes
2000
8
C
res
4
0
1
10
A
100
0
0
40
80
120
160
A
200
V
C E
, C o lle c to r-to -E m itte r V o lta g e (V )
Q
g
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.0
Total Switching Losses (mJ)
T ota l S w itching Loss es (m J)
V
CC
V
GE
T
J
I
C
= 480V
= 15V
= 2 5 °C
= 27A
10
I
C
= 54A
2.5
I
C
= 27A
1
2.0
I
C
= 14A
1.5
1.0
0
10
20
30
40
50
A
60
0.1
R
G
= 5.0
Ω
V
G E
= 15V
V
C C
= 480V
-60
-40
-20
0
20
40
60
80
100
120
140
A
160
R
G
, G a te R e s is ta n c e (
Ω
)
T
J
, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
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Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
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