2N5415U4 – 2N5416U4
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
Compliant
PNP Silicon Low-Power Transistor
Qualified per MIL-PRF-19500/485
DESCRIPTION
This family of 2N5415U4 and 2N5416U4 epitaxial planar transistors are military qualified up to
a JANS level for high-reliability applications. These devices are also available in the long-
leaded TO-5, short-leaded TO-39 and low profile UA packaging.
Important:
For the latest information, visit our website
http://www.microsemi.com.
U4 Package
Also available in:
TO-5 package
(long-leaded)
2N5415 – 2N5416
FEATURES
•
•
•
JEDEC registered 2N5415 through 2N5416 series
JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/485.
(See
part nomenclature
for all available options.)
RoHS compliant
TO-39 (TO-205AD)
package
APPLICATIONS / BENEFITS
•
•
•
General purpose transistors for low power applications requiring high frequency switching
Low package profile
Military and other high-reliability applications
(short-leaded)
2N5415S – 2N5416S
UA package
(surface mount)
2N5415UA – 2N5416UA
MAXIMUM RATINGS
@ T
A
= +25 ºC unless otherwise noted
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating & Storage Junction Temperature Range
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
Total Power Dissipation
@ T
A
= +25 °C
(2)
@ T
C
= +25 °C
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
R
ӨJA
R
ӨJC
P
T
2N5415U4
200
200
6.0
1.0
2N5416U4
300
350
6.0
1.0
Unit
V
V
V
A
°C
o
o
-65 to +200
145
12
1
15
C/W
C/W
W
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Notes:
1. Derate linearly 6.90 mW/°C for T
A
> +25 °C
2. Derate linearly 86 mW/°C for T
C
> +25 °C
T4-LDS-0305-2, Rev. 1 (7/30/13)
©2013 Microsemi Corporation
Page 1 of 7
2N5415U4 – 2N5416U4
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Hermetically sealed, aluminum nitride (AlN) ceramic body with gold over nickel plated kovar lid
TERMINALS: Gold over nickel plated surface mount terminations
MARKING: Part number, date code, manufacturer’s ID
POLARITY: PNP
TAPE & REEL option: Standard per EIA-481D. Consult factory for quantities
WEIGHT: Approximately 0.125 grams (125 milligrams)
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS level
Blank = Commercial
2N5415
U4
SMD package
JEDEC type number
(see
Electrical Characteristics
table)
Symbol
C
obo
I
CEO
I
CEX
I
EBO
h
FE
V
CEO
V
CBO
V
EBO
SYMBOLS & DEFINITIONS
Definition
Common-base open-circuit output capacitance
Collector cutoff current, base open
Collector cutoff current, circuit between base and emitter
Emitter cutoff current, collector open
Common-emitter static forward current transfer ratio
Collector-emitter voltage, base open
Collector-emitter voltage, emitter open
Emitter-base voltage, collector open
T4-LDS-0305-2, Rev. 1 (7/30/13)
©2013 Microsemi Corporation
Page 2 of 7
2N5415U4 – 2N5416U4
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
OFF CHARACTERISTICS
Parameters / Test Conditions
Collector-Emitter Breakdown Voltage
I
C
= 50 mA, I
B
= 5 mA,
L = 25 mH; f = 30 – 60 Hz
Emitter-Base Cutoff Current
V
EB
= 6.0 V
Collector-Emitter Cutoff Current
V
CE
= 200 V, V
BE
= 1.5 V
V
CE
= 300 V, V
BE
= 1.5 V
Collector-Emitter Cutoff Current
V
CE
= 150 V
V
CE
= 250 V
Collector-Emitter Cutoff Current
V
CE
= 200 V
V
CE
= 300 V
Collector-Base Cutoff Current
V
CB
= 175 V
V
CB
= 280 V
V
CB
= 200 V
V
CB
= 350 V
V
CB
= 175 V, T
A
= +150 ºC
V
CB
= 280 V, T
A
= +150 ºC
ON CHARACTERISTICS
Parameters / Test Conditions
Forward-Current Transfer Ratio
I
C
= 50 mA, V
CE
= 10 V
I
C
= 1 mA, V
CE
= 10 V
I
C
= 50 mA, V
CE
= 10 V, T
A
= +150 ºC
Collector-Emitter Saturation Voltage
I
C
= 50 mA, I
B
= 5 mA
Base-Emitter Voltage Non-Saturation
I
C
= 50 mA, V
CE
= 10 V
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-
Circuit Forward Current Transfer Ratio
I
C
= 10 mA, V
CE
= 10 V, f = 5 MHz
Small-signal short Circuit Forward-Current
Transfer Ratio
I
C
= 5 mA, V
CE
= 10 V, f ≤ 1 kHz
Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz ≤ f ≤ 1 MHz
Symbol
|h
fe
|
Min.
3
Max.
15
Unit
Symbol
h
FE
Min.
30
15
15
Max.
120
Unit
Symbol
2N5415U4
2N5416U4
V
(BR)CEO
I
EBO
2N5415U4
2N5416U4
2N5415U4
2N5416U4
2N5415U4
2N5416U4
2N5415U4
2N5416U4
2N5415U4
2N5416U4
2N5415U4
2N5416U4
I
CEX
Min.
200
300
20
50
Max.
Unit
V
µA
µA
I
CEO1
50
µA
I
CEO2
1
mA
µA
µA
mA
I
CBO1
I
CBO2
I
CBO3
50
500
1
V
CE(sat)
V
BE
2.0
1.5
V
V
h
fe
C
obo
25
15
pF
T4-LDS-0305-2, Rev. 1 (7/30/13)
©2013 Microsemi Corporation
Page 3 of 7
2N5415U4 – 2N5416U4
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C unless otherwise noted. (continued)
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
V
CC
= 200 V, I
C
= 50 mA, I
B1
= 5 mA
Turn-Off Time
V
CC
= 200 V, I
C
= 50 mA, I
B1
= I
B2
= 5 mA
Symbol
t
on
t
off
Min.
Max.
1
10
Unit
µs
µs
SAFE OPERATING AREA
(See SOA graph below and
MIL-STD-750, method 3053)
DC Tests
T
C
= +25 °C, t
P
= 0.4 s, 1 Cycle
Test 1
V
CE
= 10 V, I
C
= 1 A
Test 2
V
CE
= 100 V, I
C
= 100 mA
Test 3
V
CE
= 200 V, I
C
= 24 mA
Test 4
V
CE
= 300 V, I
C
= 10 mA
See SOA graphs on next page
T4-LDS-0305-2, Rev. 1 (7/30/13)
©2013 Microsemi Corporation
Page 4 of 7
2N5415U4 – 2N5416U4
SAFE OPERATING AREA
I
C
– COLLECTOR CURRENT - A
V
CE
– COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area (T
J
= 200 ºC, U4 on copper sink T
C
= 25 ºC)
I
C
– COLLECTOR CURRENT - A
V
CE
– COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area (T
J
= 200 ºC)
T4-LDS-0305-2, Rev. 1 (7/30/13)
©2013 Microsemi Corporation
Page 5 of 7
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