CAT525
Configured Digitally Programmable Potentiometer (DPP™):
Programmable Voltage Applications
FEATURES
Four 8-bit DPPs configured as programmable
voltage sources in DAC-like applications
Independent reference inputs
Buffered wiper outputs
Non-volatile NVRAM memory wiper storage
Output voltage range includes both supply rails
4 independently addressable buffered output
wipers
1 LSB accuracy, high resolution
Serial Microwire-like interface
Single supply operation: 2.7V - 5.5V
Setting read-back without effecting outputs
For Ordering Information details, see page 15.
DESCRIPTION
The CAT525 is a quad 8-bit digitally programmable
potentiometer (DPP™) configured for programmable
voltage and DAC-like applications. Intended for final
calibration of products such as camcorders, fax
machines and cellular telephones on automated high
volume production lines and systems capable of self
calibration, it is also well suited for applications were
equipment requiring periodic adjustment is either difficult
to access or located in a hazardous environment.
The CAT525 offers four independently programmable
DPPs each having its own reference inputs and each
capable of rail to rail output swing. The wipers are
buffered by rail to rail op amps. Wiper settings, stored
in non-volatile NVRAM memory, are not lost when the
device is powered down and are automatically
reinstated when power is returned. Each wiper can be
dithered to test new output values without effecting
the stored settings and stored settings can be read
back without disturbing the DPP’s output.
Control of the CAT525 is accomplished with a simple
3wire, Microwire-like serial interface. A Chip Select pin
allows several CAT525's to share a common serial
interface and communications back to the host
controller is via a single serial data line thanks to the
¯¯¯¯
CAT525’s Tri-Stated Data Output pin. A RDY/BSY
output working in concert with an internal low voltage
detector signals proper operation of non-volatile
NVRAM Memory Erase/ Write cycle.
The CAT525 is available in the 0°C to 70°C com–
mercial and -40°C to 85°C industrial operating
temperature ranges and offered in 20-pin plastic DIP
and surface mount packages.
APPLICATIONS
Automated product calibration
Remote control adjustment of equipment
Offset, gain and zero adjustments in self-
calibrating and adaptive control systems
Tamper-proof calibrations
DAC (with memory) substitute
PIN CONFIGURATION
PDIP 20 Lead (L)
SOIC 20 Lead (W)
V
REFH2
V
REFH1
V
DD
CLK
RDY/¯¯¯¯
BSY
CS
DI
DO
PROG
GND
1
2
3
4
5
6
7
8
9
10
CAT525
20
19
18
17
16
15
14
13
12
11
V
REFH3
V
REFH4
V
OUT1
V
OUT2
V
OUT3
V
OUT4
V
REFL4
V
REFL3
V
REFL2
V
REFL1
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. MD-2001 Rev. G
CAT525
ABSOLUTE MAXIMUM RATINGS
Parameters
Supply Voltage*
V
DD
to GND
Inputs
CLK to GND
CS to GND
DI to GND
¯¯¯¯
RDY/BSY to GND
PROG to GND
V
REF
H to GND
V
REF
L to GND
Ratings
-0.5 to +7
-0.5 to V
DD
+0.5
-0.5 to V
DD
+0.5
-0.5 to V
DD
+0.5
-0.5 to V
DD
+0.5
-0.5 to V
DD
+0.5
-0.5 to V
DD
+0.5
-0.5 to V
DD
+0.5
Units
V
Parameters
Outputs
D
0
to GND
V
OUT
1– 4 to GND
Operating Ambient Temperature
Commercial
(‘C’ or Blank suffix)
Industrial (‘I’ suffix)
Junction Temperature
Storage Temperature
Lead Soldering (10 sec max)
Ratings
-0.5 to V
DD
+0.5
-0.5 to V
DD
+0.5
0 to +70
-40 to +85
+150
-65 to +150
+300
Units
V
V
°C
°C
°C
°C
°C
V
V
V
V
V
V
V
RELIABILITY CHARACTERISTICS
Symbol
V
ZAP(2)
I
LTH(2)(3)
Parameter
ESD Susceptibility
Latch-Up
Test Method
MIL-STD-883, Test Method 3015
JEDEC Standard 17
Min
2000
100
Max
Units
V
mA
POWER SUPPLY
Symbol
I
DD1
I
DD2
V
DD
Parameter
Supply Current (Read)
Supply Current (Write)
Operating Voltage Range
Conditions
Normal Operating
Programming, V
DD
= 5V
V
DD
= 3V
Min
—
—
—
2.7
Typ
400
1600
1000
—
Max
600
2500
1600
5.5
Units
µA
µA
µA
V
LOGIC INPUTS
Symbol
I
IH
I
IL
V
IH
V
IL
Parameter
Input Leakage Current
Input Leakage Current
High Level Input Voltage
Low Level Input Voltage
Conditions
V
IN
= V
DD
V
IN
= 0V
Min
—
—
2
0
Typ
—
—
—
—
Max
10
-10
V
DD
0.8
Units
µA
µA
V
V
LOGIC OUTPUTS
Symbol
V
OH
V
IL
Parameter
High Level Output Voltage
Low Level Output Voltage
Conditions
I
OH
= -40µA
I
OL
= 1 mA, V
DD
= +5V
I
OL
= 0.4 mA, V
DD
= +3V
Min
V
DD
-0.3
—
—
Typ
—
—
—
Max
—
0.4
0.4
Units
V
V
V
Notes:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) This parameter is tested initially and after a design or process change that affects the parameter.
(3) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to V
CC
+ 1V.
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
3
Doc. No. MD-2001 Rev. G
CAT525
POTENTIOMETER CHARACTERISTICS
V
DD
= +2.7V to +5.5V, V
REFH
= V
DD
, V
REFL
= 0V, unless otherwise specified
Symbol
R
POT
Parameter
Potentiometer Resistance
R
POT
to RPOT Match
Pot Resistance Tolerance
Voltage on V
REFH
pin
Voltage on V
REFL
pin
Resolution
INL
DNL
R
OUT
I
OUT
TC
RPOT
C
H
/C
L
Integral Linearity Error
Differential Linearity Error
Buffer Output Resistance
Buffer Output Current
TC of Pot Resistance
Potentiometer Capacitances
300
8/8
2.7
0
0.4
0.5
0.25
1
0.5
10
3
—
Conditions
Min
Typ
24
±0.5
±1
±20
V
DD
V
DD
- 2.7
Max
Units
kΩ
%
%
V
V
%
LSB
LSB
Ω
mA
ppm/ºC
pF
AC ELECTRICAL CHARACTERISTICS
V
DD
= +2.7V to +5.5V, V
REFH
= V
DD
, V
REFL
= 0V, unless otherwise specified
Symbol
Digital
t
CSMIN
t
CSS
t
CSH
t
DIS
t
DIH
t
DO1
t
DO0
t
HZ
t
LZ
t
BUSY
t
PS
t
PROG
t
CLK
H
t
CLK
L
f
C
Analog
t
DS
DPP Settling Time to 1 LSB
C
LOAD
= 10 pF, V
DD
= +5V
C
LOAD
= 10 pF, V
DD
= +3V
—
—
3
6
10
10
µs
µs
Minimum CS Low Time
CS Setup Time
CS Hold Time
DI Setup Time
DI Hold Time
Output Delay to 1
Output Delay to 0
Output Delay to High-Z
Output Delay to Low-Z
Erase/Write Cycle Time
PROG Setup Time
Minimum Pulse Width
Minimum CLK High Time
Minimum CLK Low Time
Clock Frequency
C
L
= 100pF
(1)
150
100
0
50
50
—
—
—
—
—
150
700
500
300
DC
—
—
—
—
—
—
—
400
400
4
—
—
—
—
—
—
—
—
—
—
150
150
—
—
5
—
—
—
—
1
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
MHz
Parameter
Conditions
Min
Typ
Max
Units
Notes:
(1) All timing measurements are defined at the point of signal crossing V
DD
/ 2.
(2) These parameters are periodically sampled and are not 100% tested.
Doc. No. MD-2001 Rev. G
4
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
TIMING
MIN/MAX
FROM
TO
to
1
2
3
4
5
PARAM
NAME
t CLK H
t CLK H Rising CLK edge tofalling CLK edge
Min
CLK
t CLK L Falling CLK edge to CLKrising edge
t CSH
Falling CLK edge f r last data bit (DI)
o
to falling CS edge
Rising CS edge to ne rising CLK edge
xt
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
A.C. TIMING DIAGRAM
Min
Min
Min
t CSS
t CSS
t CLK L
t CSH
CS
t CSMIN
t DIS
t CSMIN Falling CS edge torising CS edge
Data valid to first rising CLK
edge after CS = high
Min
Min
t DIS
DI
5
t DIH
t DIH
t DO0
t LZ
Rising CLK edge to end of datavalid
Rising CLK edge to D0 = lo
w
Rising CS edge to D0 becoming high
low impedance (activ output)
e
Min
Max
(Max)
t LZ
t DO0
DO
t DO1
t HZ
t DO1
t HZ
Rising CLK edge to D0 = high
Falling CS edge to D0 becoming high
impedance (T
ri-State)
Max
(Max)
PROG
t PS
t PROG
t PS
Rising PROG edge to next rising
CLK edge
Min
t PROG Rising PROG edge to falling
PROG edge
t BUSY
Falling CLK edge after PR
OG=H
to
rising RD
Y/BSY edge
t BUSY
Min
RDY/BSY
Max
CAT525
Doc. No. MD-2001 Rev. G
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