CNY17F
Vishay Semiconductors
Optocoupler, Phototransistor Output,
no Base Connection
FEATURES
• Isolation test voltage, 5300 V
RMS
A
C
NC
1
2
3
6
NC
5 C
4 E
• No base terminal connection for improved
common mode interface immunity
• Long term stability
• Industry standard dual-in-line package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
18216
AGENCY APPROVALS
DESCRIPTION
The CNY17F is an optocoupler consisting of a gallium
arsenide infrared emitting diode optically coupled to a silicon
planar phototransistor detector in a plastic plug-in DIP-6
package.
The coupling device is suitable for signal transmission
between two electrically separated circuits. The potential
difference between the circuits to be coupled is not allowed
to exceed the maximum permissible reference voltages.
In contrast to the CNY17 series, the base terminal of the
F type is not conected, resulting in a substantially improved
common-mode interference immunity.
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-5 available with option 1
• BSI IEC 60950; IEC 60065
• FIMKO
ORDER INFORMATION
PART
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
CNY17F-1X006
CNY17F-1X007
CNY17F-1X009
CNY17F-2X006
CNY17F-2X007
CNY17F-2X009
CNY17F-3X006
CNY17F-3X007
CNY17F-3X009
CNY17F-4X006
CNY17F-4X007
CNY17F-4X009
Note
For additional information on the available options refer to option information.
REMARKS
CTR 40 to 80 %, DIP-6
CTR 63 to 125 %, DIP-6
CTR 100 to 200 %, DIP-6
CTR 160 to 320 %, DIP-6
CTR 40 to 80 %, DIP-6 400 mil (option 6)
CTR 40 to 80 %, SMD-6 (option 7)
CTR 40 to 80 %, SMD-6 (option 9)
CTR 63 to 125 %, DIP-6 400 mil (option 6)
CTR 63 to 125 %, SMD-6 (option 7)
CTR 63 to 125 %, SMD-6 (option 9)
CTR 100 to 200 %, DIP-6 400 mil (option 6)
CTR 100 to 200 %, SMD-6 (option 7)
CTR 100 to 200 %, SMD-6 (option 9)
CTR 160 to 320 %, DIP-6 400 mil (option 6)
CTR 160 to 320 %, SMD-6 (option 7)
CTR 160 to 320 %, SMD-6 (option 9)
Document Number: 83607
Rev. 1.5, 07-May-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
221
CNY17F
Vishay Semiconductors
Optocoupler, Phototransistor Output,
no Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
DC forward current
Surge forward current
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Collector current
Total power dissipation
COUPLER
Isolation test voltage
between emitter and detector referred to
standard climate 23/50 DIN 50014
Creepage
Clearance
Isolation thickness between
emitter and detector
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature
max. 10 s, dip soldering: distance to
seating plane
≥
1.5 mm
V
IO
= 500 V
R
IO
T
stg
T
amb
T
j
T
sld
V
ISO
5300
≥
7.0
≥
7.0
≥
0.4
175
≥
10
11
- 55 to + 150
- 55 to + 100
100
260
Ω
°C
°C
°C
°C
V
RMS
mm
mm
mm
t
≤
1.0 ms
BV
CEO
I
C
I
C
P
diss
70
50
100
150
V
mA
mA
mW
t
≤
10 µs
V
R
I
F
I
FSM
P
diss
6.0
60
2.5
100
V
mA
A
mW
TEST CONDITION
SYMBOL
VALUE
UNIT
Note
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Base collector capacitance
Emitter base capacitance
Thermal resistance
V
CE
= 5.0 V, f = 1.0 MHz
V
CE
= 5.0 V, f = 1.0 MHz
V
CE
= 5.0 V, f = 1.0 MHz
C
CE
C
BC
C
EB
R
th
5.2
6.5
7.5
500
pF
pF
pF
K/W
I
F
= 60 mA
I
R
= 10 µA
V
R
= 6.0 V
V
R
= 0 V, f = 1.0 MHz
V
F
V
BR
I
R
C
O
R
th
6.0
0.01
25
750
10
1.25
1.65
V
V
µA
pF
K/W
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
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222
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83607
Rev. 1.5, 07-May-08
CNY17F
Optocoupler, Phototransistor Output,
no Base Connection
ELECTRICAL CHARACTERISTCS
PARAMETER
COUPLER
Collector emitter, saturation voltage
Coupling capacitance
CNY17F-1
Collector emitter, leakage current
V
CE
= 10 V
CNY17F-2
CNY17F-3
CNY17F-4
I
F
= 10 mA, I
C
= 2.5 mA
V
CEsat
C
C
I
CEO
I
CEO
I
CEO
I
CEO
0.25
0.6
2.0
2.0
5.0
5.0
50
50
100
100
0.4
V
pF
nA
nA
nA
nA
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Vishay Semiconductors
Note
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
CNY17F-1
I
F
= 10 mA
Current transfer ratio
I
F
= 1.0 mA
CNY17F-2
CNY17F-3
CNY17F-4
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
40
63
100
160
13
22
34
56
30
45
70
90
TYP.
MAX.
80
125
200
320
UNIT
%
%
%
%
%
%
%
%
Note
Current transfer ratio I
C
/I
F
at V
CE
= 5.0 V, 25 °C and collector emitter leakage current by dash number.
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
I
F
= 10 mA, V
CC
= 5.0 V,
R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5.0 V,
R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5.0 V,
R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5.0 V,
R
L
= 75
Ω
I
F
= 10 mA, V
CC
= 5.0 V,
R
L
= 75
Ω
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
LINEAR OPERATION (WITHOUT SATURATION)
Turn-on time
Rise time
Turn-off time
Fall time
Cut-off frequency
t
on
t
r
t
off
t
f
f
CO
3.0
2.0
2.3
2.0
250
µs
µs
µs
µs
kHz
Document Number: 83607
Rev. 1.5, 07-May-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
223
CNY17F
Vishay Semiconductors
Optocoupler, Phototransistor Output,
no Base Connection
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
I
F
= 20 mA
Turn-on time
I
F
= 10 mA
I
F
= 5 mA
I
F
= 20 mA
Rise time
I
F
= 10 mA
I
F
= 5 mA
I
F
= 20 mA
Turn-off time
I
F
= 10 mA
I
F
= 5 mA
I
F
= 20 mA
Fall time
I
F
= 10 mA
I
F
= 5 mA
PART
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
SYMBOL
t
on
t
on
t
on
t
on
t
r
t
r
t
r
t
r
t
off
t
off
t
off
t
off
t
f
t
f
t
f
t
f
MIN.
TYP.
3.0
4.2
4.2
6.0
2.0
3.0
3.0
4.6
18
23
23
25
11
14
14
15
MAX.
UNIT
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
SWITCHING OPERATION (WITH SATURATION)
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
I
F
R
L
= 75
Ω
I
C
V
CC
= 5
V
I
F
1 KΩ
V
CC
= 5
Ω
45
Ω
47
Ω
icny17f_01
icny17f_02
Fig. 1 - Linear Operation (without Saturation)
Fig. 2 - Switching Operation (with Saturation)
www.vishay.com
224
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83607
Rev. 1.5, 07-May-08
CNY17F
Optocoupler, Phototransistor Output,
no Base Connection
Vishay Semiconductors
1000
(T
A
= - 25 ˚C,
V
CE
= 5
V)
I
C
/I
F
= f (I
F
)
1000
(T
A
= 50 ˚C,
V
CE
= 5
V)
I
C
/I
F
= f (I
F
)
I
C
(%)
I
F
I
C
(%)
I
F
100
1
2
3
4
100
1
2
3
4
10
10
1
0.1
icny17f_03
1
1
10
0.1
icny17f_06
1
10
I
F
(mA)
I
F
(mA)
Fig. 3 - Current Transfer Ratio vs. Diode Current
Fig. 6 - Current Transfer Ratio vs. Diode Current
1000
(T
A
= 0 ˚C,
V
CE
= 5
V)
I
C
/I
F
= f (I
F
)
1000
(T
A
= 75 ˚C,
V
CE
= 5
V)
I
C
/I
F
= f (I
F
)
I
C
(%)
I
F
10
1
2
3
4
I
C
(%)
I
F
100
100
10
1
2
3
4
1
0.1
icny17f_04
1
1
10
0.1
icny17f_07
1
10
I
F
(mA)
I
F
(mA)
Fig. 4 - Current Transfer Ratio vs. Diode Current
Fig. 7 - Current Transfer Ratio vs. Diode Current
1000
(T
A
= 25 ˚C,
V
CE
= 5
V)
I
C
/I
F
= f (I
F
)
1000
(I
F
= 10 mA,
V
CE
= 5
V)
I
C
/I
F
= f (T)
4
I
C
(%)
I
F
100
I
C
(%)
I
F
100
3
2
1
10
1
2
3
4
1
0.1
icny17f_05
1
10
10
- 25
icny17f_08
0
25
50
75
I
F
(mA)
T
A
(°C)
Fig. 5 - Current Transfer Ratio vs. Diode Current
Fig. 8 - Current Transfer Ratio (CTR) vs. Temperature
Document Number: 83607
Rev. 1.5, 07-May-08
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
225
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