PD - 9.1254
IRL630S
HEXFET
®
Power MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
DS(ON)
Specified at V
GS
= 4V & 5V
150°C Operating Temperature
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SMD-220 is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The SMD-220 is suitable
for high current applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
V
DSS
= 200V
R
DS(on)
= 0.40
Ω
I
D
= 9.0A
SMD-220
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 5.0V
Continuous Drain Current, V
GS
@ 5.0V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
9.0
5.7
36
74
3.1
0.59
0.025
±10
250
9.0
7.4
5.0
-55 to + 150
300 (1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Thermal Resistance
Parameter
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
Min.
––––
––––
––––
Typ.
––––
––––
––––
Max.
1.7
40
62
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Revision 0
IRL630S
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
V
(BR)DSS
∆
V
(BR)DSS
/
∆
T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min.
200
–––
–––
–––
1.0
4.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, ID = 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.40
V
GS
= 5.0V, I
D
= 5.4A
Ω
0.50
V
GS
= 4.0V, I
D
= 4.5A
2.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 50V, I
D
= 5.4A
25
V
DS
= 200V, V
GS
= 0V
µA
250
V
DS
= 160V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 10V
nA
-100
V
GS
= -10V
40
I
D
= 9.0A
5.5
nC V
DS
= 160V
24
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 100V
ns
–––
I
D
= 9.0A
–––
R
G
= 6.0Ω
–––
R
D
= 11Ω, See Fig. 10
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
from package
––– 7.5 –––
and center of die contact
––– 1100 –––
V
GS
= 0V
––– 220 –––
pF
V
DS
= 25V
––– 70 –––
ƒ = 1.0MHz, See Fig. 5
Typ.
–––
0.27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.0
57
38
33
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
230
1.7
9.0
A
36
2.0
350
2.6
V
ns
µC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 9.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 9.0A
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
9.0A, di/dt
≤
120A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%.
V
DD
= 25V, starting T
J
= 25°C, L = 4.6mH
R
G
= 25Ω, I
AS
= 9.0A. (See Figure 12)
IRL630S
100
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
BOTTOM 2.25V
TOP
100
I , Drain-to-Source Current (A)
D
10
I , Drain-to-Source Current (A)
D
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.75V
2.50V
BOTTOM 2.25V
TOP
10
2.25V
1
1
2.25V
20µs PULSE WIDTH
Tc = 25°C
0.1
1
10
100
0.1
A
0.1
0.1
1
20µs PULSE WIDTH
T
C
= 150°C
10
100
A
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics,
T
C
= 25
o
C
Fig 2.
Typical Output Characteristics,
T
C
= 150
o
C
100
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
2.5
I
D
= 9.0A
I
D
, Drain-to-Source Current (A)
2.0
10
T
J
= 150°C
1.5
1
T
J
= 25°C
1.0
0.1
0.5
0.01
2.0
V
DS
= 50V
20µs PULSE WIDTH
2.5
3.0
3.5
4.0
4.5
A
5.0
0.0
-60 -40 -20
V
GS
= 5.0V
0
20
40
60
A
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRL630S
2000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
= 9.0A
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
8
C, Capacitance (pF)
1500
C
iss
1000
6
4
C
oss
500
C
rss
0
1
10
2
A
100
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
I
D
, Drain Current (A)
10
10
100µs
T
J
= 150°C
T
J
= 25°C
1
1ms
1
10ms
100ms
0.1
0
0.4
0.8
1.2
V
GS
= 0V
A
0.1
1
T
C
= 25°C
T
J
= 150°C
Single Pulse
10
100
1000
1.6
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRL630S
V
DS
10
R
D
V
GS
R
G
D.U.T.
V
DD
I
D
, Drain Current (Amps)
8
5.0V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
6
Fig 10a.
Switching Time Test Circuit
4
2
0
25
50
75
100
125
150
A
T
C
, Case Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
P
D M
t
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
N o te s :
1 . D u ty fa c to r D = t
1
/ t
2
1
t
2
0.01
0.00001
2 . P e a k T
J
= P
D M
x Z
th J C
+ T C
0.0001
0.001
0.01
0.1
1
10
A
A
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
