PD 91459B
IRG4PC30F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
C
Fast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.59V
@V
GE
= 15V, I
C
= 17A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
600
31
17
120
120
± 20
10
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6 (0.21)
Max.
1.2
–––
40
–––
Units
°C/W
g (oz)
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1
1229//00
IRG4PC30F
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
/∆T
J
V
CE(ON)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
I
GES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600
—
Emitter-to-Collector Breakdown Voltage
T
18
—
Temperature Coeff. of Breakdown Voltage — 0.69
— 1.59
Collector-to-Emitter Saturation Voltage
— 1.99
—
1.7
Gate Threshold Voltage
3.0
—
Temperature Coeff. of Threshold Voltage
—
-11
Forward Transconductance
U
6.1
10
—
—
Zero Gate Voltage Collector Current
—
—
—
—
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 250µA
—
V
V
GE
= 0V, I
C
= 1.0A
—
V/°C V
GE
= 0V, I
C
= 1.0mA
V
GE
= 15V
1.8
I
C
= 17A
—
I
C
= 31A
See Fig.2, 5
V
—
I
C
= 17A , T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 250µA
—
S
V
CE
=
100V, I
C
= 17A
250
V
GE
= 0V, V
CE
= 600V
µA
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
51
77
I
C
= 17A
7.9
12
nC
V
CC
= 400V
See Fig. 8
19
28
V
GE
= 15V
21
—
15
—
T
J
= 25°C
ns
200 300
I
C
= 17A, V
CC
= 480V
180 270
V
GE
= 15V, R
G
= 23Ω
0.23 —
Energy losses include "tail"
1.18 —
mJ See Fig. 10, 11, 13, 14
1.41 2.0
20
—
T
J
= 150°C,
16
—
I
C
= 17A, V
CC
= 480V
ns
290
—
V
GE
= 15V, R
G
= 23Ω
350
—
Energy losses include "tail"
2.5
—
mJ See Fig. 13, 14
13
—
nH
Measured 5mm from package
1100 —
V
GE
= 0V
74
—
pF
V
CC
= 30V
See Fig. 7
14
—
ƒ = 1.0MHz
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 23Ω,
(See fig. 13a)
T
Pulse width
≤
80µs; duty factor
≤
0.1%.
U
Pulse width 5.0µs, single shot.
S
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC30F
50
F o r b o th :
Triangular w ave:
40
D uty c y c le : 5 0 %
T
J
= 1 2 5 °C
T
sink
= 9 0 °C
G a te d riv e a s s p e c ifie d
P o w er D is s ip a tio n = 2 4 W
C la m p v o lta g e :
8 0 % o f ra te d
Load Current (A)
30
S q u a re w a v e :
60 % of ra ted
volta ge
20
10
Id e a l d io d e s
0
0.1
1
10
A
100
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
1000
1000
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 25°C
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 150°C
T
J
= 150°C
T
J
= 25°C
10
10
1
1
V
G E
= 15V
20µs PULSE WIDTH
10
A
1
5
6
7
8
9
V
C C
= 50V
5µs PULSE WIDTH
A
10
11
12
13
V
C E
, Collector-to-Emitter Voltage (V)
V
G E
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
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Fig. 3
- Typical Transfer Characteristics
3
IRG4PC30F
40
V
G E
= 15 V
2.5
V
G E
= 15V
80µs PULSE WIDTH
I
C
= 34A
Maxim um D C Collector C urrent (A )
30
V
C E
, Collector-to-Emitter Voltage (V)
2.0
20
I
C
= 17A
1.5
10
I
C
= 8.5A
0
25
50
75
100
125
150
1.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T
C
, C ase Tem perature (°C)
T
J
, Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
T he rm al R e sp ons e (Z
thJ C
)
1
D = 0 .5 0
0 .2 0
0 .1 0
P
D M
0 .1
0 .0 5
0 .0 2
0 .0 1
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
t
1
t2
N o te s :
1 . D u ty fa c to r D = t
1
/t
2
0 .0 1
0 .0 0 0 0 1
2 . P e a k T
J
= P
D M
x Z
th J C
+ T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
t
1
, R e c ta n gu la r P u ls e D ura tio n (s e c )
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC30F
2000
V
GE
= 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
1600
Cres = Cce
Coes = Cce + Cgc
SHORTED
20
V
C E
= 400V
I
C
= 17A
V
G E
, Gate-to-Emitter Voltage (V)
16
C, Capacitance (pF)
1200
C
ies
12
800
8
C
oes
400
4
C
res
0
1
10
A
100
0
0
10
20
30
40
50
A
60
V
C E
, Collector-to-Emitter Voltage (V)
Q
g
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.50
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
C C
V
G E
T
J
I
C
= 480V
= 15V
= 25°C
= 17A
10
R
G
= 23
Ω
V
G E
= 15V
V
C C
= 480V
I
C
= 34A
1.45
I
C
= 17A
1
1.40
I
C
= 8.5A
1.35
1.30
0
10
20
30
40
50
A
60
0.1
-60
-40
-20
0
20
40
60
80
100
120
140
A
160
R
G
, Gate Resistance (
Ω
)
T
J
, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
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Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
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