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IS61C256AH-12N: 产品描述Standard SRAM, 32KX8, 12ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28; 产品类别存储存储; 文件大小61KB，共8页; 制造商Integrated Silicon Solution ( ISSI )

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IS61C256AH-12N概述

Standard SRAM, 32KX8, 12ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28

IS61C256AH-12N规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
零件包装代码	DIP
包装说明	0.300 INCH, PLASTIC, DIP-28
针数	28
Reach Compliance Code	compliant
ECCN代码	EAR99
最长访问时间	12 ns
I/O 类型	COMMON
JESD-30 代码	R-PDIP-T28
JESD-609代码	e0
长度	35.306 mm
内存密度	262144 bit
内存集成电路类型	STANDARD SRAM
内存宽度	8
功能数量	1
端口数量	1
端子数量	28
字数	32768 words
字数代码	32000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	32KX8
输出特性	3-STATE
可输出	YES
封装主体材料	PLASTIC/EPOXY
封装代码	DIP
封装等效代码	DIP28,.3
封装形状	RECTANGULAR
封装形式	IN-LINE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	5 V
认证状态	Not Qualified
座面最大高度	4.572 mm
最大待机电流	0.002 A
最小待机电流	4.75 V
最大压摆率	0.135 mA
最大供电电压 (Vsup)	5.25 V
最小供电电压 (Vsup)	4.75 V
标称供电电压 (Vsup)	5 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE
端子节距	2.54 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	7.62 mm
Base Number Matches	1

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IS61C256AH

32K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES

• High-speed access time: 10, 12, 15, 20, 25 ns

• Low active power: 400 mW (typical)

• Low standby power

— 250

µW

(typical) CMOS standby

— 55 mW (typical) TTL standby

• Fully static operation: no clock or refresh

required

• TTL compatible inputs and outputs

• Single 5V power supply

ISSI

MAY 1999

DESCRIPTION

The

ISSI

IS61C256AH is a very high-speed, low power,

32,768 word by 8-bit static RAMs. They are fabricated using

ISSI

's high-performance CMOS technology. This highly reli-

able process coupled with innovative circuit design tech-

niques, yields access times as fast as 10 ns maximum.

When

is HIGH (deselected), the device assumes a standby

mode at which the power dissipation can be reduced down to

250

µW

(typical) with CMOS input levels.

Easy memory expansion is provided by using an active LOW

Chip Enable (

) input and an active LOW Output Enable (

)

input. The active LOW Write Enable (

) controls both writing

and reading of the memory.

The IS61C256AH is pin compatible with other 32K x 8 SRAMs

and are available in 28-pin PDIP, SOJ, and TSOP (Type I)

packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A14

DECODER

32K X 8

MEMORY ARRAY

VCC

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

COLUMN I/O

CONTROL

CIRCUIT

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which

Integrated Silicon Solution, Inc. — 1-800-379-4774

SR020-1O

05/24/99

IS61C256AH-12N相似产品对比

	IS61C256AH-12N	IS61C256AH-12T	IS61C256AH-12NI	IS61C256AH-15JI	IS61C256AH-10T	IS61C256AH-20JI	IS61C256AH-15T	IS61C256AH-20N	IS61C256AH-15NI
描述	Standard SRAM, 32KX8, 12ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28	32KX8 STANDARD SRAM, 12ns, PDSO28, TSOP1-28	Standard SRAM, 32KX8, 12ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28	Standard SRAM, 32KX8, 15ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28	Standard SRAM, 32KX8, 10ns, CMOS, PDSO28, TSOP1-28	Standard SRAM, 32KX8, 20ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28	Standard SRAM, 32KX8, 15ns, CMOS, PDSO28, TSOP1-28	Standard SRAM, 32KX8, 20ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28	Standard SRAM, 32KX8, 15ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	DIP	TSOP	DIP	SOJ	TSOP	SOJ	TSOP	DIP	DIP
包装说明	0.300 INCH, PLASTIC, DIP-28	TSOP1-28	0.300 INCH, PLASTIC, DIP-28	0.300 INCH, PLASTIC, SOJ-28	TSOP1-28	0.300 INCH, PLASTIC, SOJ-28	TSOP1-28	0.300 INCH, PLASTIC, DIP-28	0.300 INCH, PLASTIC, DIP-28
针数	28	28	28	28	28	28	28	28	28
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	unknown	compliant	compliant	compli
ECCN代码	EAR99	EAR99	EAR99	3A991	EAR99	3A991	EAR99	EAR99	EAR99
最长访问时间	12 ns	12 ns	12 ns	15 ns	10 ns	20 ns	15 ns	20 ns	15 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDIP-T28	R-PDSO-G28	R-PDIP-T28	R-PDSO-J28	R-PDSO-G28	R-PDSO-J28	R-PDSO-G28	R-PDIP-T28	R-PDIP-T28
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0
长度	35.306 mm	11.8 mm	35.306 mm	18.161 mm	11.8 mm	18.161 mm	11.8 mm	35.306 mm	35.306 mm
内存密度	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bi
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1	1
端子数量	28	28	28	28	28	28	28	28	28
字数	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
字数代码	32000	32000	32000	32000	32000	32000	32000	32000	32000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	85 °C	85 °C	70 °C	85 °C	70 °C	70 °C	85 °C
组织	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
可输出	YES	YES	YES	YES	YES	YES	YES	YES	YES
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	DIP	TSOP1	DIP	SOJ	TSOP1	SOJ	TSOP1	DIP	DIP
封装等效代码	DIP28,.3	TSSOP28,.53,22	DIP28,.3	SOJ28,.34	TSSOP28,.53,22	SOJ28,.34	TSSOP28,.53,22	DIP28,.3	DIP28,.3
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	SMALL OUTLINE, THIN PROFILE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	IN-LINE	IN-LINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	4.572 mm	1.2 mm	4.572 mm	3.556 mm	1.2 mm	3.556 mm	1.2 mm	4.572 mm	4.572 mm
最大待机电流	0.002 A	0.002 A	0.01 A	0.01 A	0.005 A	0.01 A	0.002 A	0.002 A	0.01 A
最小待机电流	4.75 V	4.75 V	4.75 V	4.5 V	4.75 V	4.5 V	4.5 V	4.5 V	4.5 V
最大压摆率	0.135 mA	0.155 mA	0.17 mA	0.155 mA	0.165 mA	0.145 mA	0.145 mA	0.12 mA	0.16 mA
最大供电电压 (Vsup)	5.25 V	5.25 V	5.25 V	5.5 V	5.25 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.75 V	4.75 V	4.75 V	4.5 V	4.75 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	NO	YES	NO	YES	YES	YES	YES	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE	GULL WING	THROUGH-HOLE	J BEND	GULL WING	J BEND	GULL WING	THROUGH-HOLE	THROUGH-HOLE
端子节距	2.54 mm	0.55 mm	2.54 mm	1.27 mm	0.55 mm	1.27 mm	0.55 mm	2.54 mm	2.54 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	7.62 mm	8 mm	7.62 mm	7.59 mm	8 mm	7.59 mm	8 mm	7.62 mm	7.62 mm
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	含铅	-	含铅
Base Number Matches	1	1	1	1	1	-	-	-	-
厂商名称	-	-	Integrated Silicon Solution ( ISSI )	-	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )

IS61C256AH-12N

IS61C256AH-12N概述

IS61C256AH-12N规格参数

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IS61C256AH-12N相似产品对比

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