VS-40HF(R) Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 40 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Leaded version available
• Types up to 1600 V V
RRM
• Designed and qualified for multiple level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-203AB (DO-5)
TYPICAL APPLICATIONS
• Battery charges
PRODUCT SUMMARY
I
F(AV)
Package
Circuit configuration
40 A
DO-203AB (DO-5)
Single diode
• Converters
• Power supplies
• Machine tool controls
• Welding
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
TEST CONDITIONS
40HF(R)
10 TO 120
40
T
C
140
62
570
595
1600
1450
100 to 1200
-65 to 190
140/160
40
110
62
570
595
1600
1450
1400 to 1600
-65 to 160
UNITS
A
°C
A
A
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
10
20
40
60
VS-40HF(R)
80
100
120
140
160
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
100
200
400
600
800
1000
1200
1400
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
200
300
500
700
900
1100
1300
1500
1700
4.5
9
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 29-Jan-14
Document Number: 93513
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40HF(R) Series
www.vishay.com
Vishay Semiconductors
40HF(R)
10 TO 120 140/160
40
40
180° conduction, half sine wave
140
110
62
570
t = 10 ms
No voltage
reapplied
t = 8.3 ms
595
t = 10 ms
480
100 % V
RRM
reapplied
t = 8.3 ms
500
Sinusoidal half wave,
initial T
J
= T
J
maximum
t = 10 ms
1600
No voltage
reapplied
t = 8.3 ms
1450
t = 10 ms
1150
100 % V
RRM
reapplied
t = 8.3 ms
1050
t = 0.1 ms to 10 ms, no voltage reapplied
16 000
TEST CONDITIONS
0.65
T
J
= T
J
maximum
V
F(TO)
r
f
T
J
= T
J
maximum
r
f
V
FM
I
pk
= 125 A, T
J
= 25 °C, t
p
= 400 μs rectangular wave
1.30
3.8
1.50
V
0.76
4.29
m
V
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
SYMBOL
I
F(AV)
I
F(RMS)
UNITS
A
°C
A
I
FSM
A
Maximum I
2
t for fusing
I
2
t
A
2
s
Maximum I
2
t
for fusing
Value of threshold voltage
(up to 1200 V)
Value of threshold voltage
(for 1400 V/1600 V)
Value of forward slope resistance
(up to 1200 V)
Value of forward slope resistance
(for 1400 V/1600 V)
Maximum forward voltage drop
I
2
t
V
F(TO)
A
2
s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum allowable mounting
torque (+0 %, -10 %)
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated thread, tighting on nut
(1)
Lubricated thread, tighting on nut
(1)
Not lubricated thread, tighting on hexagon
(2)
Lubricated thread, tighting on hexagon
(2)
TEST CONDITIONS
40HF(R)
10 to 120 140 to 160
-65 to 190
-65 to 160
UNITS
°C
0.95
K/W
0.25
3.4 (30)
2.3 (20)
N·m
(lbf · in)
4.2 (37)
3.2 (28)
17
g
0.6
oz.
DO-203AB (DO-5)
Approximate weight
Case style
Notes
(1)
Recommended for pass-through holes
(2)
Recommended for holed threaded heatsinks
See dimensions - link at the end of datasheet
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.14
0.16
0.21
0.30
0.50
RECTANGULAR CONDUCTION
0.10
0.17
0.22
0.31
0.50
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 29-Jan-14
Document Number: 93513
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40HF(R) Series
www.vishay.com
Maximum Allowable Case Temperature (°C)
190
40HF(R)
Series
(100 V to 1200 V)
180
170
160
150
30 °
140
130
0
5
10
15
20
25
30
35
40
45
60 °
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
160
150
140
130
120
30 °
110
100
0
5
10
15
20
25
30
35
40
45
60 °
90 °
Conduction Angle
40HF(R)
Series
(1400 V, 1600 V)
Conduction Angle
90 °
120 °
120 °
180 °
180 °
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Maximum Allowable Case Temperature (°C)
190
40HF(R)
Series
(100 V to 1200 V)
180
170
160
150
30 °
140
130
120
0
10
20
30
40
50
60
70
60 °
90 °
120 °
180 °
DC
Maximum Allowable Case Temperature (°C)
160
40HF(R)
Series
(1400 V, 1600 V)
150
140
Conduction Period
130
120
110
100
90
80
0
10
20
30
40
50
60
70
30°
60 °
90°
120 °
180 °
DC
Conduction Period
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 4 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
60
50
40
30
20
180 °
120 °
90 °
60 °
30 °
A
h
S
Rt
1.
5
W
K/
2
W
K/
/W
3K
5K
/W
=
1K
/W
-D
a
elt
RMS Limit
R
7K
/W
Conduction Angle
10
0
0
5
10
15
20
25
30
35
40
40HF(R)
Series
(100 V to 1200 V)
Tj = 190 °C
10 K/
W
40
80
120
160
200
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Forward Power Loss Characteristics
Revision: 29-Jan-14
Document Number: 93513
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40HF(R) Series
www.vishay.com
Maximum Average Forward Power Loss (W)
Vishay Semiconductors
h
S
Rt
60
50
40
30
20
10
0
0
DC
180 °
120 °
90 °
60 °
30 °
RMS Limit
5
1.
W
K/
2
W
K/
A
3K
=
/W
1K
/W
-D
5K
aR
elt
/W
7K
/W
Conduction Period
40HF(R)
Series
(100 V to 1200 V)
Tj = 190 °C
10
20
30
40
50
60
10 K/
W
70
40
80
120
160
200
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 6 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
50
45
40
35
30
25
20
180 °
120 °
90 °
60 °
30 °
RMS Limit
1.5
2
K/
R
th
S
3
K/
K/
W
W
A
W
=1
K/
W
5K
7K
-D
/W
aR
elt
Conduction Angle
15
10
5
0
0
10
20
30
40
40HF(R)
Series
(1400 V, 1600 V)
T
j
= 160 °C
/W
10 K
/W
25
50
75
100
125
150
175
200
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
70
60
50
40
30
20
10
0
0
DC
180 °
120 °
90 °
60 °
30 °
R
th
S
A
1.
5
2K
K/
W
/W
=
1
W
K/
-D
3K
/W
RMS Limit
Conduction Period
40HF(R)
Series
(1400 V, 1600 V)
Tj = 160 °C
10
20
30
40
50
60
/W
7 K/
W
5K
ta
el
R
10 K/W
70
40
80
120
160
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
Revision: 29-Jan-14
Document Number: 93513
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40HF(R) Series
www.vishay.com
Vishay Semiconductors
Instantaneous Forward Current (A)
1000
Peak Half
Sine
Wave Forward Current (A)
550
500
450
400
350
300
250
200
150
100
1
At Any Rated Load Condition And With
Rated V
rrm
Applied Following
Surge.
Initial Tj = Tj Max.
@ 60 Hz 0.0083
s
@ 50 Hz 0.0100
s
100
T
J
= 25 °C
10
T
J
= T
J
Max.
40HF(R)
Series
40HF(R)
Series
up to 1200 V
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
10
100
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Voltage (V)
Fig. 11 - Forward Voltage Drop Characteristics
(Up To 1200 V)
Peak Half
Sine
Wave Forward Current (A)
550
500
450
400
350
300
250
200
150
100
0.01
Maximum Non Repetitive
Surge
Current
Versus Pulse Train Duration.
Initial Tj = Tj Max.
No Voltage Reapplied
Rated V
rrm
Reapplied
Instantaneous Forward Current (A)
600
1000
T
J
= T
J
Max.
100
T
J
= 25 °C
10
40HF (R)
Series
1
0
0.5
1
1.5
2
2.5
3
3.5
4
40HF(R)
Series
0.1
1
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Voltage (V)
Fig. 12 - Forward Voltage Drop Characteristics
(For 1400 V/1600 V)
Z
thJC
- Transient Thermal Impedance (K/W)
1
Steady State
Value
(DC Operation)
0.1
40HF(R) ..
Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square
Wave Pulse Duration (s)
Fig. 13 - Thermal Impedance Z
thJC
Characteristics
Revision: 29-Jan-14
Document Number: 93513
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
